SI 220 MH Search Results

buz73

Abstract: BUZ73A
Contextual Info: SIEMENS SIPMOS Power Transistors BUZ 73 BUZ 73 A • N channel • Enhancement mode • Avalanche-rated Type ^DS Id Tc ^DS on Package 1> Ordering Code BUZ 73 200 V 7.0 A 28 "C 0.4 Si TO-220 AB C67078-S1317-A2 BUZ 73 A 200 V 5.5 A 37 "C 0.6 Q TO-220 AB

Contextual Info: Product Data Sheet Industrial SDHC Memory Card S-220 Series SPI, SDHC compliant class 6 & 10 compliant B U: Fl a sh Pr od u ct s Date : Marc h 25 , 2 0 13 Re vi si o n : 1 .3 0 Fi le : S - 2 20 _da ta_ s he e t_ SD - Lx B N_Re v1 2 0 .d oc S-220 Series SDHC Memory Card

sandisk 32GB Nand flash

Contextual Info: Product Data Sheet Industrial SDHC Memory Card S-220 Series SPI, SDHC compliant, class 6 & 10 compliant B U: Fl a sh Pr od u ct s Date : Marc h 25 , 2 0 13 Re vi si o n : 1 .3 0 Fi le : S - 2 20 _da ta_ s he e t_ SD - Lx B N_Re v1 2 0 .d oc S-220 Series SDHC Memory Card

Contextual Info: Si SGS-THOMSON AM0608-200 m RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION INTERNAL INPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE P o u t = 220 W MIN. WITH 8.7 dB GAIN O - A The AM0608-200 is an internally-matched, com­

Contextual Info: VP0645 VP0650 0FàSupertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R d S ON BVoes (max) -450V 30£! -500V 30£i Order Number / Package Si b v dss/ TO-39 TO-92 TO-220 DICE* -0.2A VP0645N2 VP0645N3 VP0645N5 VP0645ND -0.2A VP0650N2

Contextual Info: f Z 7 SCS-THOMSON ^7# MJE13006 MJE13007/A [» ^ iy iO T ® K S MOTOR CONTROL, SWITCH REGULATORS DESCRIPTION The MJE13006, MJE13007 and MJE13007A are si­ licon multiepitaxial mesa NPN transistors. They are mounted in Jedec TO-220 plastic package, inten­

ADC 8 channels, 10msps

Abstract: Sawtek filters
Contextual Info: Over sampling ADCs in Cellular Base Station Receivers a 5/18/98 - 1 Com. Fabrication Processes 24 Nominal Resolution bits 22 20 18 Efficiency (mW/MHz) 16 220 14 25 12 12 10 6 8 3 6 2 CMOS * ADC as block system chip * * Si Bipolar 4 100E+0 a 1E+3 10E+3 100E+3

SANYO TFT

Abstract: sanyo tft screen
Contextual Info: TFT-LCD MODULE SPECIFICATION SHEET ALR250FGT 5.6cm 2.2inch 176 x RGB x 220 dot TE NT AT IV E *These specifications are tentative, and are subject to change without notice. This is a 2.2 inch transflective Low-Temperature p-Si TFT-LCD module that is suitable for cellular

vp1204n2

Contextual Info: SUPERTEX blE D I NC • Ô7732TS QQG3257 flfll « S T X ^ Super te x inc. VP12A P-Channel Enhancement-Mode Vertical DMOS FETs Ordering information Standard Commercial Devices / BVdos R d S ON (max) Order Number / Package SI B Vdss TO-39 TO-220 DICE* -40V

transistor Buz 11

Abstract: buz11
Contextual Info: SIEMENS BUZ 11 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 11 Vbs 50 V h 30 A ^%>S{on 0.04 Si Package Ordering Code TO-220 AB C67078-S1301-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: SIEMENS BUZ 76 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 76 Vf S 400 V k> 3A ^4)S on) 1.8 Si Package Ordering Code TO-220 AB C67078-S1315-A2 Maximum Ratings Parameter Symbol Continuous drain current b Tc = 37 °C

BD243

Contextual Info: r z 7 SGS-THOMSON ^7# BD243/A/B/C BD244/A/B/C POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The BD243, BD243A, BD243B and BD243C are si­ licon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intended for use in medium power linear and switching applications.

Contextual Info: UNISONICTECHNOLOGIESCO., LTD MJE2955T PNP SILICON TRANSISTOR H I GH V OLT AGE T RAN SI ST OR ̈ DESCRI PT I ON 1 TO-220 The UTC MJE2955T is designed for general purpose of amplifier and switching applications. 1 TO-252 ̈ ORDERI N G I N FORM AT I ON Ordering Number

Contextual Info: UNISONICTECHNOLOGIESCO., LTD BU407 NPN SILICON TRANSISTOR N PN EX PI T AX I AL PLAN AR T RAN SI ST OR ̈ DESCRI PT I ON The UTC BU407 is a NPN epitaxial planar transistor, designed for use in TV Horizontal output and switching applications. ̈ 1 TO-220 FEAT U RES

T1P32

Abstract: bd241 42bb
Contextual Info: f Z 7 SGS-THOMSON BD241/A/B/C BD242/A/B/C ^7# MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD241, BD241 A, BD241B and BD241C are si­ licon epitaxial-base NPN power transistors in Jedec TCi-220 plastic package, intended for use in medium

C67078-A1315-A2

Contextual Info: SIEMENS SI PM OS Power MOS Transistors ’ D SC on • • • • BUZ 76 BUZ 76 A = 400 V = 3 .0 / 2.7 A = 1 .8 /2 .5 Q N channel Enhancement mode Avalanche-proof Package: TO-220 A B 1) Type Ordering code BUZ 76 C67078-A1315-A2 BUZ 76 A C67078-A1315-A3 Maximum Ratings

buz11

Abstract: 11S2 BUZ p channel buz 11 a Buz 11 BUZ11A
Contextual Info: SIEMENS BUZ 11 BUZ 11 A, BUZ 11 S2 SI PMOS Power Transistors • N channel • Enhancement mode • Avalanche-rated O VPT05381 Type VDS Id Tc Ordering Code 50 V 30 A 29 "C ^DS on 0.040 Q. Package 1> BUZ 11 TO-220 AB C67078-S1301-A2 BUZ 11 A 50 V 26 A 25 "C

SC22-3

Abstract: 2sc2238
Contextual Info: TO-220 < o >r * a I V S si PIN CONFIGURATION:— 1. BASE 2. COLLECTOR 3. EMITTER M_ MIN 14.42 9.63 3,56 DIM A B C D E F G h J K L M N MAX 16.51 10.67 4.83 0.90 1,40 1.15 3.75 3.85 2,29 2,79 2,54 3.43 0,56 12,70 14.73 6,35 2,03 2,92 31.24 7 1/2 DEG — - -

d239ab

Abstract: CS696 bd240c D239 D239B d240a D239 PNP
Contextual Info: rZ Z SG S -TH O M SO N B D239/A /B /C B D 240/A /B /C ^7# MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BD239, BD239A, BD239B and BD239C are si­ licon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intended for use in medium

2SC 2229 transistor

Abstract: ic a 2231 npn 10a 800v Q68000-A3869 BUX84 BUX85 Q68000-A5166 siemens bsc E12 Siemens ce2231
Contextual Info: 25C D • 02 3 S b 0 5 ISIEG ÜOQMfib? BUX84 BUX85 NPN Silicon Power Transistors SI E M E N S A K T I E N G E S E L L S C H A F BUX 84 and BUX 85 are triple diffused NPN silicon power transistors in TO 220 cases. They are outstanding for their short switching times and high dielectric strength, and are

B0138

Contextual Info: 28L0138-70R-10 ELECTRICAL CHARACTERISTICS: Z DCR Si @ R ated C urren t 2 5 MHz 1 0 0 M H z ( n ) 123 220 M in im u m - 165 M a x im u m - 275 N o m in a l P H Y S IC A L DIMENSIONS: A 3.51 [.1 3 8 ] ± 0 .2 5 B 5 9 .0 0 [2 .3 2 ] ± 1 .5 7 [ . 0 6 2 ] C 1 3 .9 7

anzac 112

Abstract: SW-367 TO53 SW-111 SW-121 SW-161 SW-211 SW-213 SW-341 SW-342
Contextual Info: tl/A-COM INC/ ANZAC HIV 51E 1> • 5M5177 ODDSS^ ant - ANZ ANZAC RF& CELLULAR COMPONENTS RF Control Devices SPST Switches INSERTION LOSS dB TYP FREQUENCY RANGE (MHz) St/GaAs SW-121 SW-161 SW-211 SW-213 SW-341 SW-342 SW-344 SW-367 SW-111 SW-131 SW-209 SW-209B

Surface Mount

Contextual Info: API_newlayouts_single:APIcatalog_newlayouts 8/26/10 10:25 AM Page 87 er w Po s or ct du In SERIES PDxxxR SMT Power Choke Core * Test Measurement Frequency Values < 10µH tested @ 7.96 MHz; Values ≥10uH tested @ 1.0 kHz Mechanical Configuration Units designed for Surface Mounting

CE 472M

Abstract: nu 472M 224k
Contextual Info: er w Po s or ct du In SERIES PDxxxR SMT Power Choke Core * Test Measurement Frequency Values < 10µH tested @ 7.96 MHz; Values ≥10uH tested @ 1.0 kHz Mechanical Configuration Units designed for Surface Mounting Terminals Solder Coated Core Construction High Resistivity Ferrite