SI 1360 H Search Results

Contextual Info: Transceivers Lucent o ffe rs h ig h -p e rfo rm a n c e , co s t-e ffe c tiv e tra n sce iv­ ers th a t are fu lly c o m p lia n t w ith SONET/SDH in te rm e d i­ ate- and lo ng -re a ch a p p lica tio n s a t O C -1, O C -3/STM -1, and O C -12/S T M -4. The transceivers are packaged in a

GTO thyristors

Abstract: S0700KC17D H0500KC25Y S0700KC17Y S1200NC25Y S0500KC20Y GTO thyristor H0500KC200 H1200NC200 westcode Inverter Diode
Contextual Info: PRODUCT BRIEF Gate Turn-off Thyristors May 2009 Issue 6 A broad range of high specification GTO thyristors are available with blocking voltages from 1.7 kV to 6 kV and controllable current ratings to 4000A. Our GTO thyristor portfolio incorporates a range of advanced

SONY 1310

Abstract: SI 1360 H
Contextual Info: sony. CXB1132Q/Q-Y 9, 8, Dual 4-bit Universal Shift Register Description Pin Assignment The CXB1132Q is an ultra high speed monolithic Universal Shift Register with variable bit length. Select inputs SI and S2 select a function mode from parallel load, hold, shift right and shift left S3

1360 marking

Abstract: capacitors high voltage ta31 LT1354 LT1359 LT1360 LT1360CN8 LT1363 1360
Contextual Info: LT1360 50MHz, 800V/µs Op Amp U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT1360 is a high speed, very high slew rate operational amplifier with excellent DC performance. The LT1360 features reduced supply current, lower input offset voltage, lower input bias current and higher DC gain than

RFHA1023

Abstract: SEMICONDUCTOR J598
Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features „ „ „ „ „ „ Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation

SEMICONDUCTOR J598

Abstract: rfha
Contextual Info: RFHA1023A Proposed 250W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features „ „ „ „ „ „ Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation

SI 1360 H

Abstract: c5732 LA 4645 LC5732 LC5732N 3379A 32.768KHZ one light 1360 A/M29F010B(45/70/90/MT352/CG/SI 1360 H
Contextual Info: Ordering number : EN3379A _ CMOS LSI ^°-3379A I _L C 5 7 3 2 N 4-Bit Microcomputer with LCD Driver // Overview // The LC5732N is a C M O S 4-bit microcomputer that operate on low voltage, very low current and contain

Contextual Info: RFCR2301 RFCR2301 1200MHz to 1400MHz Single Junction Drop-In Circulator 1200MHz TO 1400MHz SINGLE JUNCTION DROP-IN CIRCULATOR Package: Drop-in, 1in x 1in Features  Typical Insertion Loss Less than 0.25dB  Isolation Greater than 23dB  200W Foward Power Rating

Contextual Info: CXB1544Q-Y SONY. Dual 8 : 1 Multiplexer with Latch Description Pin Assignment The CXB1544Q-Y is an ultra high speed monolithic ECL 1C, which contains two 8: 1 multiplexers with transparent Latched outputs. The data select S0-S2 inputs determine which data input is enabled. When

BUZ360

Abstract: C67078-A3204-A2
Contextual Info: ÜÖD D • 88D û23StiQS QQISQbô 2 « S I E 6 1 5068 T~~ 3*7- i _D BUZ 360 S IEMENS A K T I E N G E S E L L S C H A F Main ratings N-Channel = 800 V Drain-source voltage K>s = 3,6 A Continuous drain current Draln-source on-resistance ^DS(on =» 3,0 Si Description

rfha1020

Contextual Info: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features       Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Optimized Evaluation Board Layout for 50Operation

Contextual Info: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology   RF OUT VD Pin 2 GND BASE Supports Multiple Pulse

SEMICONDUCTOR J598

Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse

ECJ2VB1H104K

Abstract: air surveillance system diagram using radar Gan hemt transistor RFMD 28F0181-1SR-10
Contextual Info: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology   RF OUT VD Pin 2 GND BASE Supports Multiple Pulse

c11cf

Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse

8DM1

Contextual Info: sony Dual 8 : . CXB1544Q-Y 1 Multiplexer with Latch Description Pin Assignm ent The CXB1544Q-Y is an ultra high speed monolithic ECL 1C, which contains two 8: 1 multiplexers with transparent Latched outputs. The data select S 0-S2 inputs determine which data input is enabled. When

B65820-B1008-D1

Abstract: siemens 230 94 O N48 transformer core N30 transformer core SiEMENS B65659 B65659 Siemens 340LA IEC 60431 B63399B4 B65820-B2001
Contextual Info: RM 7 Core and Accessories Individual parts Part no. Page Adjusting screwdriver for assembly only B63399 232 Matching handle B63399 232 Adjusting screw B65659 232 Core B65819 228 Clamps B65820 231 Insulating washer 1 B65820 231 Coil former B65820 230 Core

optical fiber free book

Abstract: "Hitachi Kodaira Semiconductor" HL1328DJS HL1336DJS HL1337DNS HR1155PAS HR1156PAS 10 gb laser diode Hitachi DSA0047
Contextual Info: Hitachi Plastic Mini-DIL Application Note ADE-508-014A Rev.1 Sep. 2001 Hitachi Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite

Contextual Info: I/O Buffer Information QL8xl2B, QL12xl6B, QL16x24B Components: QL8x12B, QL12x16B, QL16x24B Signals: All I/O pins. Please contact the QuickLogic Hotline 408 990-4100 for more information. VOL vs IOL IOL Min -24.3 -23.4 -22.5 -21.6 -20.7 0.0 18.9 35.6 47.3

521 optocoupler

Abstract: optocoupler P 521 1LQ74 Siemens optocoupler sfh610 Siemens sfh615 optocoupler 8RT23 IL0755 sfh606 sfh6101-1 IL300 siemens
Contextual Info: Optocoupler Options Siemens offers couplers in single, dual, quad, and small outline surface mount packages. The coupler types offered are high reliability, high voltage, triacs and linear, and high current transfer ratio. In addition to our true surface mount couplers,

BMS 13-60 wire

Abstract: BMS 13-60 Type 7 BMS 13-60 BMS 13-60 Type 1 405FW504-A 15-5PH FAA-PMA MS2508I-C6 405fw504 390fw04a10
Contextual Info: F O - 5 5 1 1 1 -B HONEYWELL P A R T NUMBER 390FW04A-10 FAA-PMA A REV DOCUMENT 11 0006991 C H A N G E D BY KR CHECK 04AUG04 AK B NOTES 1 - ELEC T R IC A L CONNECTIONS - THREE TWISTED 18-GAGE WIRES PER BOEING BMS 13-60, TYPE 10, RED TO TERMINAL C OF 405FW504-A SWITCH CARD, BLUE TO

Contextual Info: I/O Buffer Information QL8x12B, QL12x16B, QL16x24B 2 Components: QL8x12B, QL12x16B, QL16x24B Please contact the QuickLogic Hotline 408 987-2100 for input only (High-Drive) pins. VOL vs IOL IOL Min -24.3 -23.4 -22.5 -21.6 -20.7 0.0 18.9 35.6 47.3 54.9 58.5

Contextual Info: I/O Buffer Information QL8x12B, QL12x16B, QL16x24B Components: QL8x12B, QL12x16B, QL16x24B Signals: All I/O pins. Please contact the QuickLogic Hotline 408 990-4100 for more information. IOL Min -24.3 -23.4 -22.5 -21.6 -20.7 0.0 18.9 35.6 47.3 54.9 58.5

24x32

Contextual Info: I/O Buffer Information QL8x12B, QL12x16B, QL16x24B Components: QL8x12B, QL12x16B, QL16x24B Signals: All I/O pins. Please contact the QuickLogic Hotline 408 990-4100 for more information. V -5.0 -4.0 -3.0 -2.0 -1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5