SLP-290B-51
Abstract: 00145B SKS100 msg06 SHS361
Contextual Info: Trigger Devices Sensors Hall sensors lc max mA Vc max tV) PD (mW) VH (mV) Rio (12) SHS1Ì0 InSb linear 12 - 200 21 to 55 (1 V/1 kG) 500 to 1500 DP4 SHS210 InSb linear 10 - 150 21 to 55 (1 V/1 kG) 500 to 1500 CP4 SHS211 InSb linear 20 - 150 50 10 85 (1 V/1
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shs210shs211shs220shs230+11shs260shs263shs264shs311shs320shs330slp-290b-5100145bsks100msg06shs361
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insb
Abstract: Hall Sensor insb HALL ELEMENT SHS361
Contextual Info: T - .33-01 SANYO SEMICO NDUCTOR CORP DIE » 7 1 1 7 0 7 t DDQSSlfc 4 | " P a s - oi BIDIRECTIONAL THYRISTORS P \ V rm(V loo' ^A) 0.5 t - o i - an . ’200 ' DTA05B : •Vêt • : % imA) (vj;. Package . DTA05E 15 2.3 T092 DTA08E 10 1.5 T092 DTA1C DTA1E
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dtc10c-ndtm10c-ndtc12c-ndtm12c-n+7t0202t0220t022qinsbhall sensor insbhall elementshs361
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HALL ELEMENT
Abstract: SHS110 magnetoresistive ptn1 shs210 SHS211 insb Hall Sensor insb SHS361
Contextual Info: SANYO SEMICONDUCTOR CORP Q1E D | T'nTOTb DDDSSlb M | 7 ^ «55-01 T P - a y - 01 BFDIRECTIONAL THYRISTORS T-on-on TRIGGER DEVICES r • • Item • ' Type Number Bidirectional Diode PUT : Characteristics,-.^-/-. ' _ Package BTD4M Vbo =29~37V DHD PTN1 Vo=6V, Ip=5pA
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t-25--dta05bdta05cdta05e+12dta08et0202t0220hall elementshs110magnetoresistiveptn1shs210shs211insbhall sensor insbshs361
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SHS210
Abstract: SHS361
Contextual Info: Beam-lead GaAs Schottky Barrier Diodes Single diodes Absolute maximum ratings Device Application Electrical characteristics Ta = 25 deg. C Vr (V) *F (mA) Tm (teg. C) Vr @ Ir Vr (V) IB <UA) Ct Vf @ If Vf (V) If (mA) Ct (pF) @ » f H« @ If Rs (Q) If (mA)
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sbl-12sbl-801sbl-802sbl-803+8sbl-804sbl-221shs264shs311shs320shs330shs210shs361
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