SHOCKLEY DIODE Search Results

Contextual Info: 460 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)480 V(BO) Max. (V)720 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)360 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0

Contextual Info: 430 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)240 V(BO) Max. (V)360 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)180 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0

Contextual Info: 410 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)80 V(BO) Max. (V)120 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)60 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0

shockley diode

Contextual Info: 1N3832 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)21 V(BO) Max. (V)29 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)15 I(H) Max. (A) Holding Current15m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m

Contextual Info: 1N3489 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)16 V(BO) Max. (V)24 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)12 I(H) Max. (A) Holding Current6.0m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)70m

P-Channel Depletion Mode FET

Abstract: p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion
Contextual Info: AN101 Siliconix An Introduction to FETs Introduction The basic principle of the fieldĆeffect transistor FET has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic

shockley diode

Contextual Info: 420 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)160 V(BO) Max. (V)240 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)120 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0

shockley diode

Contextual Info: 1N3490 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)16 V(BO) Max. (V)24 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)12 I(H) Max. (A) Holding Current45m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)70m

Contextual Info: 1N3836 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)41 V(BO) Max. (V)49 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)27 I(H) Max. (A) Holding Current15m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m

shockley diode

Contextual Info: 480 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)640 V(BO) Max. (V)960 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)480 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0

Contextual Info: 1N3837 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)46 V(BO) Max. (V)54 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)30 I(H) Max. (A) Holding Current15m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m

shockley diode

Contextual Info: 470 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)560 V(BO) Max. (V)840 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)420 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0

Contextual Info: 450 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)400 V(BO) Max. (V)600 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)300 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0

p channel depletion mosfet

Abstract: list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor depletion p mosfet P-Channel Depletion Mosfets
Contextual Info: AN101 An Introduction to FETs Introduction The basic principle of the field-effect transistor FET has been known since J. E. Lilienfeld’s patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic device which provides the designer the means to accomplish nearly every circuit function. At one time, the

shockley diode application

Abstract: shockley diode transistor bipolar driver schematic diode shockley shockley diode SPICE MODELS spice shockley diode SPICE MODELS AP 494 Application Note BF 494 C shockley diode datasheet
Contextual Info: Application Note 23 Issue 2 March 1996 Zetex SPICE Models Understanding Model Parameters and Applications Limitations Neil Chadderton Introduction SPICE was originally developed as a simulation tool for Integrated Circuit design SPICE being an acronym for

thyristor scr oscillator circuit

Abstract: shockley diode DIAC EQUIVALENT circuit diac with triac ac speed control SCHEMATIC circuit scr oscillator shockley diode application DIAC EQUIVALENT scr firing METHODS Thyristor Shockley diac triac control circuit motor
Contextual Info: Teccor brand Thyristors Fundamental Characteristics of Thyristors Introduction The Thyristor family of semiconductors consists of several very useful devices. The most widely used of this family are silicon controlled rectifiers SCRs , Triacs, SIDACs, and

Contextual Info: Mater. Res. Soc. Symp. Proc. Vol. 1433 2012 Materials Research Society DOI: 10.1557/opl.2012.1032 Stability of Electrical Characteristics of SiC “Super” Junction Transistors under LongTerm DC and Pulsed Operation at various Temperatures Siddarth G. Sundaresan, Aye-Mya Soe, and Ranbir Singh

shockley diode application

Abstract: IP4294 DFN2510
Contextual Info: XS ON 10 IP4294CZ10-TBR ESD protection for ultra high-speed interfaces Rev. 3 — 24 October 2012 Product data sheet 1. Product profile 1.1 General description The device is designed to protect high-speed interfaces such as SuperSpeed USB, High-Definition Multimedia Interface HDMI , DisplayPort, external Serial Advanced

Contextual Info: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 59, NO. 10, OCTOBER 2012 2795 Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs Siddarth G. Sundaresan, Aye-Mya Soe, Stoyan Jeliazkov, and Ranbir Singh, Member, IEEE Abstract—The stability of the electrical characteristics of SiC

NE800296

Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in

MIL-STD-806

Abstract: tc5000 TC40H000 rca thyristor manual TC4069 OSCILLATOR tc-74ic mc14500b mc14500 shockley diode application IC - TC4001BP
Contextual Info: OUTLINE 1. C2HOS IC Family 1.1 CMOS and C 2M0S "CMOS" is an abbreviation of "Complementary Metal Oxide Semi­ conductor", and "Complementary" means to combine P-channel type MOS FET and N-channel type MOS FET complementarily. The CMOS circuit configuration, since its announcement at ISSCC in 1963, attracted

74xx76

Abstract: TDA 7247 74XX174 triangle and square wave generator lm339 BA 658 Bar-Graph Display Driver 74xx161 DARLINGTON TRANSISTOR ARRAY ic str 6454 equivalent 74xx11 74XX32
Contextual Info: Electronics Workbench TM Multisim 8 Simulation and Capture TM Component Reference Guide TitleShort-Hidden cross reference text May 2005 371587A-01 Support Worldwide Technical Support and Product Information ni.com National Instruments Corporate Headquarters

D43256AC

Abstract: d431000acz shockley diode Ultrasonic humidifier circuit shockley diode application INCOMING RAW MATERIAL INSPECTION checklist d431000agw D43256AGU D431000AGZ D43256AC 85 L
Contextual Info: Quality and Reliability Manual AN-RQC-REP013V20 The information in this document is based on data issued in May, 1993 at the latest. The information is subject to change any time without notice. For the actual design-in refer to the latest product documentation or to NEC´s Information System and Electronic Catalog INSECT .

JD 1803

Abstract: philips diode PH 33D Schematics bosch AL 1450 DV bosch al 1450 dv JD 1803 52B jd 1803 IC jd 1803 data sheet quartz kds 9j shockley diode application Yokogawa yf 104
Contextual Info: High-Frequenty Analog Integrated Cirtuit Design Edited by R a v en d er G oyal W ILEY SERIES IN MICROWAVE AND OPTICAL ENGINEERING K a i Chang Series Editor , INSUME OF MICROELECTRONICSUBßARY High-Frequency Analog Integrated-Circuit Design W ILEY SERIES IN MICROWAVE AN D O PTICAL