SHINETSU G746 ROHS Search Results

shinetsu G746 rohs

Abstract: shinetsu G746 G746 rohs G746 shinetsu G746 H11S H46S AN-GEN-042-B shinetsu Dented
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-042-B for RoHS compliance products Date : 14th Dec. 2007 Prepared : Y.Tanaka Confirmed : T.Okawa SUBJECT: RECOMMENDATION of THERMAL COMPOUND APPLYING METHOD for RA series RoHS COMPLIANCE PRODUCTS

H11S

Abstract: G746 shinetsu H46S G746 shinetsu G746 g-746 shinetsu G746 rohs
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-042-C Date : 14th Dec. 2007 Rev.date : 7th Jan. 2010 Prepared : Y.Tanaka Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RECOMMENDATION of THERMAL COMPOUND APPLYING

shinetsu G746

Abstract: shinetsu G746 rohs G746 shinetsu G746 H11S G746 rohs
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-GEN-042-D Date : 14th Dec. 2007 Rev. date : 22th Jun. 2010 Rev.date : 7th Jan. 2010 Prepared : Y.Tanaka Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RECOMMENDATION of THERMAL COMPOUND APPLYING

Contextual Info: 600 V, TBD A, IGBT FGD633 Preliminary Features Package  Low Saturation Voltage  High Speed Switching  With Integrated Low VF Fast Recovery Diode  RoHS Compliant TO-3PF-3L  VCE - 600 V  IC-TBD A TC = 100 °C

Contextual Info: 600 V, 20 A, IGBT MGT622 Preliminary Features Package  Low Saturation Voltage  High Speed Switching  RoHS Compliant TO-3P-3L 4 C  VCE - 600 V  IC-20 A (TC = 100 °C)

Contextual Info: 600 V, 37 A, IGBT MGT633 Preliminary Features Package  Low Saturation Voltage  High Speed Switching  RoHS Compliant TO-247-3L 4 C  VCE - 600 V  IC-37 A (TC = 100 °C)

Contextual Info: 600 V, 20 A, IGBT MGT632 Preliminary Features Package  Low Saturation Voltage  High Speed Switching  RoHS Compliant TO-247-3L 4 C  VCE - 600 V  IC-20 A (TC = 100 °C)

Contextual Info: 600 V, 20 A, IGBT MGD632 Preliminary Features Package  Low Saturation Voltage  High Speed Switching  With Integrated Low VF Fast Recovery Diode  RoHS Compliant TO-247-3L 4 C  VCE - 600 V

mgd622

Contextual Info: 600 V, 20 A, IGBT MGD622 Preliminary Features Package  Low Saturation Voltage  High Speed Switching  With Integrated Low VF Fast Recovery Diode  RoHS Compliant TO-3P-3L 4 C  VCE - 600 V

MGD633

Contextual Info: 600 V, 37 A, IGBT MGD633 Preliminary Features Package  Low Saturation Voltage  High Speed Switching  With Integrated Low VF Fast Recovery Diode  RoHS Compliant TO-247-3L 4 C  VCE - 600 V

STR-W6750

Abstract: STR-W6756 strw6756 Application Note 28103.30 strw6750 data sheet str w6756 STR W6750 str w6756 str w6750 f w6756
Contextual Info: STR-W6756 Data Sheet 28103.33* ih ng rs tc lato i Sw egu R Universal-Input/140 W Off-Line QuasiResonant Flyback Switching Regulator ABSOLUTE MAXIMUM RATINGS at TA = +25°C Control Supply Voltage, VCC . . . . 35 V Drain-Source Voltage, VDSS . . . . . . 650 V

STR-W6753 circuit diagram

Abstract: STR-W6750 STR-W6753 circuit STR-W6753 STR-W6754 circuit diagram strw6750 STR-W6756 STRW6753 STR-W6754 STR-W6753 diagram
Contextual Info: STR-W6753 Data Sheet 28103.31 ih ng rs tc lato i Sw egu R Universal-Input/58 W Off-Line QuasiResonant Flyback Switching Regulator ABSOLUTE MAXIMUM RATINGS at TA = +25°C Control Supply Voltage, VCC . . . . 35 V Drain-Source Voltage, VDSS . . . . . . 650 V

STR-W6754 circuit diagram

Abstract: str-w6754 STR-W6750 STRW6754 STR-W6756 Application Note 28103.30 str w6750 data sheet str w6756 str W6754 STR-W6754 circuit diagram detail
Contextual Info: STR-W6754 Data Sheet 28103.32 ih ng rs tc lato i Sw egu R Universal-Input/100 W Off-Line QuasiResonant Flyback Switching Regulator ABSOLUTE MAXIMUM RATINGS at TA = +25°C Control Supply Voltage, VCC . . . . 35 V Drain-Source Voltage, VDSS . . . . . . 650 V

STR-W6756

Abstract: STR-W6750 strw6756 strw6750 STRw-6756 Application Note 28103.30 28103.30 str.w6756 STR-W6756 circuit diagram strw6756 diagram
Contextual Info: STR-W6756 Data Sheet 28103.33 ih ng rs tc lato i Sw egu R Universal-Input/140 W Off-Line QuasiResonant Flyback Switching Regulator ABSOLUTE MAXIMUM RATINGS at TA = +25°C Control Supply Voltage, VCC . . . . 35 V Drain-Source Voltage, VDSS . . . . . . 650 V

STR-W6753 circuit diagram

Abstract: STR-W6756 circuit diagram
Contextual Info: STR-W6753 Data Sheet 28103.31* ih ng rs tc lato i Sw egu R Universal-Input/58 W Off-Line QuasiResonant Flyback Switching Regulator ABSOLUTE MAXIMUM RATINGS at TA = +25°C Control Supply Voltage, VCC . . . . 35 V Drain-Source Voltage, VDSS . . . . . . 650 V

Contextual Info: VRM = 600 V, IF AV = 20 A, trr = 35 ns(max.) Fast Recovery Diode FMXS-1206S Features Package The FMXS-1206S is a fast recovery diode which realize a peak reverse voltage of 600V, a typical forward voltage drop of 1.4V and typical trr-time of 25ns optimizing a life-time control. It has the characteristics

mp1526

Abstract: MN1526 "Sanken power transistor"
Contextual Info: 260 V, 15 A Silicon NPN Epitaxial Planar Bipolar Transistor MN1526 Features Package  Adopt LAPT Structure  Kept hFE-IC Linearity “Flat” to High current  Improved Switching Characteristics  High Frequency  Exceptional Safe Operation Area

Contextual Info: 100 V, 34 A, 20.2 mΩ Low RDS ON N ch Trench Power MOSFET SKI10297 Features Package TO-263  V(BR)DSS - 100 V (ID = 100 µA)  ID - 34 A  RDS(ON) - 28.8 mΩ max. (VGS = 10 V, ID = 17.1 A)

Contextual Info: 75 V, 46 A, 10.4 mΩ Low RDS ON N ch Trench Power MOSFET SKI07171 Features Package TO-263  V(BR)DSS - 75 V (ID = 100 µA)  ID - 46 A  RDS(ON) - 14.1 mΩ max. (VGS = 10 V, ID = 22.8 A)

Contextual Info: 75 V, 85 A, 5.3 mΩ Low RDS ON N ch Trench Power MOSFET SKI07074 Features Package TO-263  V(BR)DSS - 75 V (ID = 100 µA)  ID - 85 A  RDS(ON) - 6.9 mΩ max. (VGS = 10 V, ID = 44.0 A)

Contextual Info: 30 V, 80 A, 3.2 mΩ Low RDS ON N ch Trench Power MOSFET SKI03036 Features Package TO-263  V(BR)DSS - 30 V (ID = 100 µA)  ID - 80 A  RDS(ON) - 3.9 mΩ max. (VGS = 10 V, ID = 57.0 A)

Contextual Info: 60 V, 57 A, 7.0 mΩ Low RDS ON N ch Trench Power MOSFET SKI06106 Features Package TO-263  V(BR)DSS - 60 V (ID = 100 µA)  ID - 57 A  RDS(ON) - 9.2 mΩ max. (VGS = 10 V, ID = 28.5 A)

Contextual Info: 75 V, 62 A, 7.2 mΩ Low RDS ON N ch Trench Power MOSFET SKI07114 Features Package TO-263  V(BR)DSS - 75 V (ID = 100 µA)  ID - 62 A  RDS(ON) - 9.7 mΩ max. (VGS = 10 V, ID = 31.2 A)

Contextual Info: 100 V, 66 A, 8.8 mΩ Low RDS ON N ch Trench Power MOSFET SKI10123 Features Package TO-263  V(BR)DSS - 100 V (ID = 100 µA)  ID - 66 A  RDS(ON) - 12.1 mΩ max. (VGS = 10 V, ID = 33.0 A)