SHF0186K Search Results

2.5 GHz RF power transistors with s-parameters

Contextual Info: 1Stanford Microdevices SHF-0186K Product Description Stanford M icrodevices’ SHF-0186K is a AIG aAs/G aAs Heterostructure FET housed in a low cost surface mount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its low Schottky

Contextual Info: SHF-0186, -0186K DC-12 GHz, 0.5 Watt AIGaAs/GaAs HFET October, 1995 Features - AIGaAs/GaAs H e te ro stru ctu re FET T ech n o lo g y - High Pow er Added E fficie n cy: Up to 40% - High A sso cia te d G ain: 16dB T ypical at 2GHz - A vailable in P lastic o r Flanged Ceram ic Package

AN-020

Abstract: sirenza fet
Contextual Info: Product Description Sirenza Microdevices’ SHF-0186K is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a lowcost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.

Contextual Info: 1Stanford Microdevices Product Description SHF-0186K Stanford M icrodevices’ SHF-0186K is a AIG aAs/G aAs Heterostructure FET housed in a low cost surface mount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its low Schottky

SHF-0186K

Abstract: Sirenza Microdevices, Inc sirenza fet
Contextual Info: Product Description Sirenza Microdevices’ SHF-0186K is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a lowcost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.

SNA-486

Abstract: SPF-1576 SPF-2076 Z27D SPF-1676 sna-186 SPDT FETs
Contextual Info: Table of Contents Model Description SPF-284 SPF-484 SPF-684 SPF-884 SPF-1576 SPF-1676 Low-Noise GaAs FETs 1-2GHz 0.8dB NF r 2GHz 1-2GHz 0.5dB NF ® 2G H z 2-!2G H z0.7dB NF ¡34G H z 2-12GHz 0.5dB NF {n}4GHz 2-26GHz 0.6dB NF ® 12GHz 2-26G H z0.5dB N F ® 12G H z

Contextual Info: Product Description SHF-0186K Stanford Microdevices’ SHF-0186K is a AIGaAs/GaAs Heterostructure FET housed in a low cost surface mount plastic package. HFET technology improves breakdown voltage for high drain voltage operation. Its low Schottky leakage current improves power added efficiency.

SHF-0186K

Abstract: AN020 shf0186k
Contextual Info: Preliminary Preliminary Product Description Stanford Microdevices’ SHF-0186K is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added

shf0186k

Abstract: SHF-0186K Sirenza Microdevices, Inc
Contextual Info: Product Description Sirenza Microdevices’ SHF-0186K is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a lowcost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.

Contextual Info: SHF-0186K Product Description Stanford M icrodevices’ SHF-0186K is a AIG aAs/G aAs Heterostructure FET housed in a low cost surface mount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its low Schottky leakage current im proves power added efficiency.

HFET

Abstract: SHF-0186K-TR2 SHF-0186K-TR3 SHF-0186K SHF-0186K-TR1
Contextual Info: Product Description SHF-0186K Stanford Microdevices’ SHF-0186K is a AIGaAs/GaAs Heterostructure FET housed in a low cost surface mount plastic package. HFET technology improves breakdown voltage for high drain voltage operation. Its low Schottky leakage current improves power added efficiency.