SHANTOU HUASHAN ELECTRONIC DEVICES Search Results
SHANTOU HUASHAN ELECTRONIC DEVICES Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| DLW21SH670HQ2L | Murata Manufacturing Co Ltd | CMC SMD 67ohm 320mA POWRTRN | |||
| DLW21SH900HQ2L | Murata Manufacturing Co Ltd | CMC SMD 90ohm 280mA POWRTRN | |||
| DLW21SH121HQ2L | Murata Manufacturing Co Ltd | CMC SMD 120ohm 280mA POWRTRN | |||
| BLM15PX330BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 33ohm POWRTRN | |||
| BLM15PX600SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 60ohm POWRTRN |
SHANTOU HUASHAN ELECTRONIC DEVICES Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Shantou Huashan Electronic Devices
Abstract: HCP6C60
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HCP6C60 Shantou Huashan Electronic Devices HCP6C60 | |
HFP840
Abstract: diode 400V 4A IRF840 irf840 equivalent 8A500V transistor 400v 8a to220
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HFP840 O-220 IRF840 width300S HFP840 diode 400V 4A IRF840 irf840 equivalent 8A500V transistor 400v 8a to220 | |
HFP730
Abstract: HFP730 equivalent IRF730 transistor IRF730
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HFP730 O-220 IRF730 width300S HFP730 HFP730 equivalent IRF730 transistor IRF730 | |
hfp640
Abstract: IRF640 equivalent irf640
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HFP640 O-220 IRF640 width300S hfp640 IRF640 equivalent irf640 | |
HBS170Contextual Info: Shantou Huashan Electronic Devices Co.,Ltd. HBS170 N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-92 These products have been designed to minimize on-state resistance While provide rugged, reliable, and fast switching performance. They |
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HBS170 500mA 100uA 200mA HBS170 | |
"Silicon Controlled Rectifier"
Abstract: HCP8C60 gate voltage control circuit dc voltage
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HCP8C60 "Silicon Controlled Rectifier" HCP8C60 gate voltage control circuit dc voltage | |
SCR 40A 600V
Abstract: HCP20C60 cicuit SCR 20A 600V
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HCP20C60 SCR 40A 600V HCP20C60 cicuit SCR 20A 600V | |
HCP16C60Contextual Info: Shantou Huashan Electronic Devices Co.,Ltd. HCP16C60 Silicon Controlled Rectifier █ Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current IT(RMS =16A) * Low On-State Voltage (1.35V(Typ.)@ ITM) * Non-isolated Type █ General Description |
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HCP16C60 HCP16C60 | |
HFP830
Abstract: IRF830 DIODE HALF BRIDGE TO-220
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HFP830 O-220 IRF830 HFP830 IRF830 DIODE HALF BRIDGE TO-220 | |
transistor equivalent irf740
Abstract: full bridge irf740 HFP740 irf740 equivalent IRF740 mosfet irf740
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HFP740 O-220 IRF740 width300S 10Apk transistor equivalent irf740 full bridge irf740 HFP740 irf740 equivalent IRF740 mosfet irf740 | |
HJP1645CTContextual Info: HJP1645CT Shantou Huashan Electronic Devices Co.,Ltd. 16A SCHOTTKY BARREIER RECTIFIER █ Features █ Package Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability |
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HJP1645CT O-220 die60HZ. 25unless HJP1645CT | |
HJP10100CTContextual Info: HJP10100CT Shantou Huashan Electronic Devices Co.,Ltd. 10A HIGH VOLTAGE SCHOTTKY BARREIER RECTIFIER █ Features █ Package Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability |
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HJP10100CT O-220 HJP10100CT | |
HCP12C60
Abstract: gate voltage control dc
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HCP12C60 HCP12C60 gate voltage control dc | |
HCN6C60Contextual Info: Shantou Huashan Electronic Devices Co.,Ltd. HCN6C60 Silicon Controlled Rectifier █ Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current IT(RMS =6A) * Low On-State Voltage (1.4V(Typ.)@ ITM) * Non-isolated Type █ General Description |
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HCN6C60 HCN6C60 | |
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FQP30N06
Abstract: fqp30n06 equivalent hfp30n06
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HFP30N06 O-220 FQP30N06 Tempe0N06 FQP30N06 fqp30n06 equivalent hfp30n06 | |
relay 6v 100 ohm
Abstract: electronic relay 6v phase control trigger ht138f IT15A
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HT138F-600 O-220F O-220F HBT138F-600 relay 6v 100 ohm electronic relay 6v phase control trigger ht138f IT15A | |
H2N7000Contextual Info: H2N7000 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-92 These products have been designed to minimize on-state resistance While provide rugged, reliable, and fast switching performance. These products |
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H2N7000 500mA 200mA H2N7000 | |
HJP20100CTContextual Info: HJP20100CT Shantou Huashan Electronic Devices Co.,Ltd. 20A HIGH VOLTAGE SCHOTTKY BARREIER RECTIFIER █ Features █ Package Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability |
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HJP20100CT O-220 HJP20100CT | |
c25 rectifier
Abstract: 10A high efficiency rectifier
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HKP1040CT O-220 300us c25 rectifier 10A high efficiency rectifier | |
electronic relay 6vContextual Info: HTF16A60 Shantou Huashan Electronic Devices Co.,Ltd. INSULATED TYPE TRIAC TO-220F PACKAGE █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-State Current(IT(RMS)=16A) * High Commutation dv/dt *Isolation Voltage（VISO=1500V AC） TO-220F |
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HTF16A60 O-220F O-220F electronic relay 6v | |
scr 600V 10AContextual Info: Shantou Huashan Electronic Devices Co.,Ltd. HCF10C60 Silicon Controlled Rectifier █ Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current IT(RMS =10A) * Low On-State Voltage (1.4V(Typ.)@ ITM) * Non-isolated Type █ General Description |
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HCF10C60 scr 600V 10A | |
6V relay
Abstract: electronic relay 6v Triac 3a 600v HTF6A60
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HTF6A60 O-220F O-220F 6V relay electronic relay 6v Triac 3a 600v HTF6A60 | |
diode 28v, amps
Abstract: HKP3040CT c125 diode
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HKP3040CT O-220 diode 28v, amps HKP3040CT c125 diode | |
electronic relay 6v
Abstract: triac 600V 80A triac 1500v relay 6v 150 ohm 6v 150 ohm relay Triac 3a 600v triac 600v 3a
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HBT137F-600 O-220F O-220F electronic relay 6v triac 600V 80A triac 1500v relay 6v 150 ohm 6v 150 ohm relay Triac 3a 600v triac 600v 3a | |