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    hfp640

    Abstract: IRF640 equivalent irf640
    Contextual Info: HFP640 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-220 These power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters,


    Original     		hfp640o-220irf640width300s+1irf640 equivalent PDF

    TL 139

    Abstract: HFP640 TL139
    Contextual Info: BVDSS = 200 V RDS on typ = 0.145Ω HFP640 ID = 18 A 200V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ.)


    Original     		hfp640o-22054typtl 139+1tl139 PDF