SGSP14 Search Results

Contextual Info: SGSP141 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V) I(D) Max. (A)0.6 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC)

Contextual Info: SGSP142 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V) I(D) Max. (A)600m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC)

p341

Abstract: P241 sgsp240 SGSP241 SP140 SGSP141 sgsp341 p141 05 SGSP SGSP140
Contextual Info: 7^5^237 GQl7fln i S G S-THOMSON 07E 73C 1 7 3 1 6 7 '- 3 ^ - 0 7 HIGH SPEED SW IT C H IN G APPLICATIONS ' dm • (DLM (.) f\ot Tstg TJ R DS(ON) 3 5 0 V /4 0 0 V 20Q 0 .6 A 450V 25Q 0 .6 A TO-39 SOT-82 TO -220 Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KQ)

SP249

Abstract: sgsp248 sgsp349 P249 P349 sgsp348 SGSP148
Contextual Info: S G S-TH O nSO N 73C 0 7 E 1 7 3 2 4" D D | 7 ^ 5 3 7 r - 3 ? - 0 0 1 7 0 2 7 0 7 > ^ Ì T l l Ì ? r'SGSP1487ÌP149 SGSP248/P249 SGSP348/P349 |*^ * N-CHANNEL POWER MOS TRANSISTORS " - ' - l i HIGH SPEED SW ITCHING APPLICATIONS ABSOLUTE M A X IM U M RATINGS

GG 06

Abstract: VN35010
Contextual Info: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (5) Max (V) Ciss Max (F) tr Max (s) tf Max (8) Toper Max (OC) Package 5tyle N-Channel Enhancement-Type, (Co nt' d) 5 10 UFN733 2N6759 SFN333 MTM5N35