SGS M27C1001 Search Results

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

M27C1001

Contextual Info: SGS-THOMSON M27C1001 mo 1024K 128K x 8 CMOS UV EPROM - OTP ROM • JEDEC PIN OUT. ■ VERY FAST ACCESS TIME : 120 ns. ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE. ■ LOW POWER "CMOS" CONSUMPTION : . Active Current 35mA . Standby Current 200 (jA

smd transistor x8

Abstract: smd transistor c011 12v 3a regulator LM317 WP smd transistor M5482 L298 L297 M5480 5kw dc-dc SGSF463 BYT12PI100
Contextual Info: DATA LOGGERS RECOMMENDED PRODUCTS FROM SGS-THOMSON PRINT HEAD HAMMER DRIVE Type Function ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 High Current Darlington Drivers Medium Current Low Saturation Transistor Array BDX53 BDX54 Series BDW93 & BDW94 Series

m27c1001

Contextual Info: /= 7 SGS-1H0MS0N M27C1001 ^TÆ . 0K0D ®@iiui®ra®iD®i CMOS 1 Megabit 128K x 8 UV EPROM and OTP ROM A B B R E VIA TE D DATA VERY FAST ACCESS TIME: 60ns COMPATIBLE with HIGH SPEED MICROPRO­ CESSORS, ZERO WAIT STATE LOW POWER "CMOS" CONSUMPTION: - Active Current 30mA

PJ 1179

Abstract: M27512 12b1 M27F512 ST24C08B1 M27C256B-12F1 ST93C46AB1 m27c4001-12f1 m48z32y M27C1001-20F1 ST24C04CM6TR
Contextual Info: MEMORY SELECTOR Leading Edge Memories GO Leading Edge Memories Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs Broad Range SGS-THOMSON is a world leader in non-volatile memories, manufacturing a

256x16 eprom

Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Contextual Info: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1

M27C1001

Contextual Info: Æ T SGS-THOMSON CMOS 1 Megabit 128K x 8 UV EPROM and OTP ROM > VERY FAST ACCESS TIME: 60ns > COMPATIBLE with HIGH SPEED MICROPRO­ CESSORS, ZERO WAIT STATE • LOW POWER "CMOS" CONSUMPTION: - Active Current 30mA - Standby Current lOO^A ■ PROGRAMMING VOLTAGE: 12.75V

misplaced Wire Bonds

Abstract: TOP SIDE MARKING M27C512 1562Q M27C512 SGS-THOMSON
Contextual Info: QUALITY & RELIABILITY REPORT January to December 1995 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, EPROM, OTP Memory and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

M27C1001

Contextual Info: r Z J SGS-TUOMSON ^ 7 # M27C1001 [lD g ^ E y i( i» ( Q M © S CMOS 1 Megabit (128K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns ■ CO M PATIBLE W ITH HIGH SPEED M IC R O ­ PROCESSORS, ZER O W AIT STATE ■ LOW POWER "CMOS" CONSUMPTIO N:

SGS M27C256

Abstract: TOP SIDE MARKING M27C512 M27C256 SGS-THOMSON mk48t08 BV 726 B m27c mk48t18 SGS M2732A Eprom 2015 static ram CP 1005
Contextual Info: QUALITY & RELIABILITY REPORT October 1996 to September 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

Contextual Info: QUALITY & RELIABILITY REPORT April 1995 to March 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

TOP SIDE MARKING M27C512

Abstract: m27c512 equivalent 4Q96 M27128A M2716 M2732A M2764A QRR037 4Q96-1Q97 M27C256B datecode
Contextual Info: QUALITY & RELIABILITY REPORT April 1996 to March 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

TOP SIDE MARKING M27C512

Contextual Info: QUALITY & RELIABILITY REPORT October 1995 to September 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

M27C512 SGS-THOMSON

Abstract: M2201 ST93C46
Contextual Info: QUALITY & RELIABILITY REPORT July 1995 to June 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

Contextual Info: SGS-THOMSON * 7 /» [ L IO T O W O i IS M 27C 1001 1 Megabit 128K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 45ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER "CMOS” CONSUMPTION: - Active Current 30mA - Standby Current lOO^A

Contextual Info: SGS-THOMSON n»i Li TO K!ID®i M27V101 LOW VOLTAGE 1 Megabit (128K x 8 UV EPROM and OTP ROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ ACCESS TIME: 120,150 and 200ns ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 15mA - Standby Current 20|*A ■ SMALL PACKAGES for SURFACE

ST90T27

Contextual Info: SGS-THOMSON [M œ [lL iû r a M O i S T 9 0 2 7 , S T 9 0 2 8 16K ROM / 256 RAM HCMOS MCUs • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time : 500ns (12MHz internal ■ Internal Memory : ROM RAM ST9027

ST6398

Abstract: HLX quartz hlx crystal QMA INVERTER setting data hlx 12Mhz crystal oscillator RG61 SGS M74HC04 sda 20560 hlx* crystal QMA INVERTER
Contextual Info: SGS-THOMSON [M œ [lL iû r a M O i S T 9 0 2 7 , S T 9 0 2 8 16K ROM / 256 RAM HCMOS MCUs • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time : 500ns (12MHz internal ■ Internal Memory : ROM RAM ST9027

QMA INVERTER

Abstract: HLX quartz ST6398 EPROM 27256 programmer schematic ST9027 ST9028 ST90R28 SGS M74HC04 tda 835 cj CLCC44-W
Contextual Info: SGS-THOMSON [M œ [lL iû r a M O i S T 9 0 2 7 , S T 9 0 2 8 16K ROM / 256 RAM HCMOS MCUs • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time : 500ns (12MHz internal ■ Internal Memory : ROM RAM ST9027

FZJ 131

Abstract: FZJ 135
Contextual Info: FZJ SGS-1H0MS0N ^7# M27V101 OMD [Si©i!Li©'if^ Q R!lD(gI LOW VOLTAGE CMOS 1 Megabit (128K x 8) UV EPROM and OTP ROM ABBREVIATED DATA • LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (Ta = 0 to 70°C) - Vcc Range: 3.2V to 5.5V (TA = -4 0 to 85°C)

Contextual Info: SGS-THOMSON M27V101 LOW VOLTAGE CMOS 1 Megabit 128K x 8 UV EPROM and OTP ROM ADVANCE DATA • LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (T a = 0 to 70°C) - V cc Range: 3.2V to 5.5V (T a = - 4 0 to 85°C) ■ ACC ESS TIME: 200 and 250ns ■ LOW POWER "CMOS" CONSUMPTION:

R0014

Abstract: VR001415 7L Marking TC 4863 SGS-Thomson ST9 10 35L V6 TDA 4863 G
Contextual Info: SGS-THOMSON IM O M iL iig r a fM O O S S T 9 0 R 5 2 ROMLESS HCMOS MCU WITH BANKSWITCH AND A/D CONVERTER • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time: 375ns 16MHz internal ■ 224 general purpose registers available as RAM,

M27G1001

Abstract: 27C1001 27C1001 eprom M27C1001
Contextual Info: SGS-THOMSON G M2 7 C 1 0 0 1 m l 1 Megabit 128K x 8 UV EPROM and OTP E PROM FAST AC C E S S T IM E : 45ns LO W PO W ER ’’C M O S ” C O N SU M PTIO N : - A ctive C urrent 3 0m A - S tan db y C urrent lOOfi.A PR O G R A M M IN G VO LTAG E: 12.75V E LEC TR O N IC S IG N ATU R E to r AU TO M ATED

sgs thomson

Abstract: FDIP24 M87C512 eprom rom 512k x 16 bits M27C512 SGS-THOMSON capacity of EPROM
Contextual Info: ORGANIZATION ACCESS TIME PART NUMBER PACKAGE POWER SUPPLY CONSUMPTION A C T / STANDBY 16K Bits 2K x 8 350 ns M2716 FDIP 24 24K Bits 4K x 8 200 ns 4,75 to 5,25V 1 0 0 /2 5 mA 4,5 to 5,5V 450 ns M2732A FDIP 24 4,75 to 5,25V 1 2 5 /3 5 mA 4,5 to 5,5V 250 ns 300 ns