CS thyristor
Abstract: Thyristor CS 165 SHR400 cs50n SG1500GXH25 SL3000GX22 2500v SHR400R22 reverse conducting thyristor 4500v
Contextual Info: Gate Turn-O ff Thyristors Anode Short Type Reverse Conducting Type Symmetrical Type -> Peak Off State Voltage 2500V 4500V Type No. SG800EX25* SG1400EX25" SGB00GXH25 SGR3000EX26 SG1500GXH25 SG3000GXH25 SGR3000GXH26 It q q m 800 1400 1500 3000 C2 C2 * underdevelopment
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sgb00gxh25sg1500gxh25sg3000gxh25sgr3000ex26+14sgr3000gxh26sg800ex25sg1400ex25shr400r22sl1500gx22sl2500jx21cs thyristorthyristor cs 165shr400cs50nsl3000gx222500vreverse conducting thyristor4500v
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lrm200
Abstract: SGR3000EX26 GTO 3000A 2500V LS LRM2000-A SGR3000EX GTO 100A 500V
Contextual Info: TOSHIBA REVERSE CONDUCTING TYPE SGR3000EX26 Unit in mm PRELIMINARY í-¿3.5±02 Inverter Application • Repetitive Peak Off-State Voltage: VDRM = 2500V Note 1. • R.M.S. On-State Current: IT (RMS) = 1400A (Tf=77°C) • R.M.S. Reverse Current: lT (RMS) = 1000A (Tf=77°C)
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sgr3000ex2610miselrm200gto 3000a 2500v ls+3lrm2000-asgr3000exgto 100a 500v
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GTO 100A 500V
Contextual Info: TOSHIBA GATE TU RN -O FF THYRISTOR SEMICONDUCTOR SGR3000EX26 TnCUIDA • w w ■I I TECHNICAL DATA REVERSE CONDUCTING TYPE T E N T A T IV E D A T A SGR3000EX26 INVERTER APPLICATION U n it in mm 2-03.5 +0.2 • R ep etitive Peak Off-State Voltage : V;q r m = 2500V (Note. 1)
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sgr3000ex26--3000a00a//zs--2000a+1gto 100a 500v
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SGR3000EX26
Abstract: GTO 100A 500V
Contextual Info: TO SH IBA GATE T U R N - O F F THYRISTOR SEMICONDUCTOR TO SHIBA TECHNICAL SGR3000EX26 DATA REVERSE CONDUCTING TYPE TENTATIVE DATA SGR3000EX26 Unit in mm INVERTER APPLICATION • • • • • • Repetitive Peak Off-State Voltage : V d r m = 2500V (Note. 1)
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sgr3000ex26--50agto 100a 500v |
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snubber diode
Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
Contextual Info: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11
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sg600gxh26sg800w24sg1000gxh26sg1200ex24+16sg1500ex24sg2000ex24sg2000ex26sg2000gxh26sg2200gxh24sg2500ex24snubber diodesg2500gxgto sg3000gxh24sg3000gxh24free diode1000gxhh22800exh21sg3000gxh100gxhh21sg4000gxh26g
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500EXH21
Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
Contextual Info: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that
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sg1200ex24sg1500ex24sg2000ex24sg2200gxh24+13sg3000ex24sg3000gxh24sg3000jx24sg2000gxh26sg800gxh24sg1000gxh26500exh21100gxhh21800a 75mgate turn off thyristorstoshiba 100gxhh21800gxhh21800gx
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100EXG11
Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
Contextual Info: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26
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sg2500ex24sg3000ex24sg4000ex26sg2000r24+16sg2000u24sg2000w24sg1200ex24sg1500ex24sg2000ex24sg2000ex26100exg11500exh21200fxg12200fxh12800gxhh21gto 200a100exhgto 300a100gxhh214500v
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gate turn off thyristors
Abstract: 500EXH21 800gxhh21 800exh21
Contextual Info: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that
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1sg1200ex24sg1500ex24sg2000ex24sg2000ex26+10sg2200gxh24sg3000ex24sgr3000ex26sg4000ex26sgr3000gxh26sg4000gxh26gate turn off thyristors500exh21800gxhh21800exh21
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