SGM20 Search Results

SGM2004M

Abstract: sgm2004
Contextual Info: SGM2004M SONY. GaAs N-channel Dual Gate MES FET Description S G M 2 0 0 4 M is an N -chan nel d u a l g a te G a A s M E S F E T f o r U H F ba n d lo w -n o ise a m p lific a tio n . T h is F E T is s u ita b le f o r a w id e range o f a p p lic a tio n s in c lu d in g T V tu n e rs, c e llu la r ra d io s

2022C

Abstract: 2022e
Contextual Info: SGM2022 Dual, Low Dropout, 250mA LDO Regulators GENERAL DESCRIPTION FEATURES The SGM2022 is a dual, low-power, low-dropout, CMOS y Highly Accurate: ±2% linear voltage regulators. It operates from a 2.5V to 5.5V y Ultra-Low Dropout Voltage: input and delivers up to 250mA at each channel.

Contextual Info: SGM2024 Quad, Low Power, Low Dropout, 200mA, RF-Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2024 is a quad, low-power, low-dropout, CMOS ● Low Output Noise: 30µVRMS TYP 10Hz to 100kHz linear voltage regulator that operates from 2.5V to 5.5V

SGM2016AN

Abstract: dual-gate
Contextual Info: SGM2016AN GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications

Contextual Info: SONY SGM2014AN GaAs N-channel Dual Gate MES FET Preliminary Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF

Contextual Info: SONY S G M 2014A M GaAs N-channel Dual Gate MES FET Preliminary D escription The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF

fet dual gate sot143

Abstract: SGM2014M
Contextual Info: SGM2014M SONY, GaAs N-channel Dual Gate MES FET_ hor the availability of this product, please contact the sales officir] Description Package Outline Unit : mm The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is

SGM2016AM

Abstract: SGM2016AP dual-gate
Contextual Info: SGM2016AM/AP GaAs N-channel Dual-Gate MES FET Description The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone,

x733

Abstract: sot23-5 package marking X718 X727 x728 SOT23 marking x718 5-PIN x725 RESISTOR X733 2.85V SOT23 300mA sot23-5 package marking bp SOT23 marking BP 5-PIN
Contextual Info: SGM2007/A Low Power, Low Dropout, 300mA, RF - Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2007/A series low-power, low-noise, low-dropout, CMOS linear voltage regulators operate from a 2.5V to 5.5V input and deliver up to 300mA. They are the perfect choice

SOT89-3D

Abstract: marking sot89 SGM2013 sg sot89 MARKING TR SOT23-3 ZENER DIODE 0.5v XD33 marking A2 SOT89
Contextual Info: 300mA, Low Power, Low Dropout, 3 -Terminal, Linear Regulators SGM2013 GENERAL DESCRIPTION FEATURES The SGM2013 low-power, low-dropout, CMOS linear voltage regulators operate from a 2.5V to 5.5V input and deliver up to 300mA. They are perfect choice for low voltage,

Contextual Info: SGM2015 Low Power, Low Dropout, 250mA, RF - Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2015 series low-power, low-noise, low-dropout, z Low Output Noise: 30µVRMS TYP 10Hz to 100kHz CMOS linear voltage regulators operate from a 2.5V to z Ultra-Low Dropout Voltage:

x818 diode

Contextual Info: SGM2008 Low Power, Low Dropout, 300mA, RF - Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2008/A series low-power, low-noise, low-dropout, CMOS linear voltage regulators operate from a 2.5V to 5.5V input and deliver up to 300mA. They are the perfect choice for low voltage, low power

Contextual Info: SGM2020 Low Power, Low Dropout, RF - Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2020 series low-power, low-noise, low-dropout, y Low Output Noise: CMOS linear voltage regulators operate from a 2.5V to 30µVRMS TYP 10Hz to 100kHz 5.5V input voltage. They are the perfect choice for low

Sony Semiconductor M-281

Contextual Info: SONY GaAs N-channel Dual Gate MES FET Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.

Contextual Info: SGM2021 Low Power, Low Dropout, Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2021 series low-power, low-noise, low-dropout, y Low Output Noise CMOS linear voltage regulators operate from a 2.5V to y Low Dropout Voltage 5.5V input voltage. They are the perfect choice for low

"GaAs N-channel Dual Gate"

Abstract: SGM2014AN Sony Semiconductor M-281
Contextual Info: SGM2014AN GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications

Y525

Abstract: Y528 BZM55B5V6 SGM2005 DFN-6
Contextual Info: SGM2005 Low Power, Low Dropout, 150mA, RF - Linear Regulators GENERAL DESCRIPTION The SGM2005 series low-power, low-noise, low-dropout, CMOS linear voltage regulators operate from a 2.5V to 5.5V input and deliver up to 150mA. They are the perfect choice for low voltage, low power applications. An ultra

BZM55B5V6

Abstract: SGM2014 sg sot23 marking 1F 6 pin Zener diode sot23-5
Contextual Info: SGM2014 Low Power, Low Dropout, 250mA, RF - Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2014 series low-power, low-noise, low-dropout, CMOS linear voltage regulators operate from a 2.5V to 5.5V input and deliver up to 250mA. They are the perfect choice for low voltage, low power applications.

N-Channel, Dual-Gate FET

Abstract: SGM2014AM
Contextual Info: SGM2014AM GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications

SGM2013N

Abstract: transistor frequency 1.5GHz gain 20 dB dual-gate
Contextual Info: SGM2013N GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2013N is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications

TX-429D

Abstract: SGM2006M ne gJ8 sgm2006 TM100-H TM101 TM200-H TM201-M 12GHz TM100
Contextual Info: - 164 - f M É¡ tt € m & m it ñ V*t* Ì % K SGH5003E 'i z - SGH5602E SGM2004M SGM2006M/P V * GaAsHEMT N D 5 DS LN A GaAsHEMT N D 5 DS UHF LN A GaAs/MES N D 12 DSX UHF LN A GaAs/MES N D 12 DSX * (V) -3. 5 0 98 aa. të I* MW LN A m V- 3È X (A) ft P d/P c h

N-Channel, Dual-Gate FET

Contextual Info: SONY SGM2016M/P1 GaAs N-channel Dual-Gate MES FET D escription Package O utline Unit : mm The SGM2016M/P is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including U H FT V tuners, cellular radios, and DBS IF amplifiers.

Contextual Info: SGM2014 Low Power, Low Dropout, 250mA, RF - Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2014 series low-power, low-noise, low-dropout, z Low Output Noise: 30µVRMS TYP 10Hz to 100kHz CMOS linear voltage regulators operate from a 2.5V to z Ultra-Low Dropout Voltage:

Contextual Info: SGM2023 Quad, Low Power, Low Dropout, 200mA, RF-Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2023 is a quad, low-power, low-dropout, CMOS ● Low Output Noise: 30µVRMS TYP 10Hz to 100kHz linear voltage regulator that operates from 2.5V to 5.5V