SG 421 Search Results

Contextual Info: MB91580M/S Series 32-bit Microcontroller FR Family FR81S MB91F583MG/MH/MJ/MK/SG/SH/SJ/SK, MB91F584MG/MH/MJ/MK/SG/SH/SJ/SK, MB91F585MG/MH/MJ/MK/SG/SH/SJ/SK Data Sheet Full Production Publication Number MB91585MG_DS705-00013 CONFIDENTIAL Revision 1.1 Issue Date January 31, 2014

4a2d

Abstract: MSG60L41 359RGA MSG60U41 108a2 59RF M208 B1 2-109B4A TA8250 59RC
Contextual Info: — H M i j x j M SG60 277 — • ï ÿ z L - ;p 4 I i S « o ttu s i» « o » » É f lt M SG 60G 41- M SG 6 0 L4 1 2000V M SG 60U41 2500V M SG 60N 41- : -0 s3 ± g2 •M SBI r \ •A. /« l^o 1 TX\ fri711 VJ -BS li U - i “ § IS d m 2Q0±Cj.2 \3-(M5X10)

SG600EX21

Abstract: SG500GXH22 SG800EX21 equivalent IGD 515 ei SG800EX21 TA8250 SG500FXF22 O200A
Contextual Info: - 78 - 2 * SG 5 0 0 rFX F, O-f-3 •y/’f, G X H j2 2 T-43 13 - 6 0 E 2 A 'i 5Ë O200A, 3300V-4500V It! ^ SG 500FXF22 SG 500GXH22 VsflM 15 VoftM 3300 500 ( 1^0=^ VTjk m , I t (RMS) 200 (7 7 = 70’C ) Vo« = % K üäm , Cj = 2 ^ F , 4500 i,= l ^ s , V i> = ^ V W ,

Contextual Info: GMM764211ÛCNS/SG-6/7 LG Semicon Co.,Ltd. 2,097,152 WORDS x 64 BIT CMOS EDO DYNAMIC RAM MODULE Description Features The GMM76421 ¡OCNS/SG is an 2M x 64 bits EDO Dynamic RAM MODULE which is assembled 8 pieces o f 2M x 8bit EDO DRAMs in 28 pin SOJ package, two 16bit

Contextual Info: GMM7361000DS/SG-60/70/80 LG Semicon Co.,Ltd. 1,048,576 W O R D S x 36 BIT CMOS DYNAMIC RAM MODULE Description Features The G M M 7 3 6 1OOODS/SG is a 1M x 36 bits D ynam ic R A M M O D IJLH w hich is assem bled 8 pieces o f 1M x 4bit D R A M s in 20/26 pm SO J

SG300EX11

Abstract: SG300R11 SG300R12 SG300U12 SG300W11 SG300W12 T-40 R20N
Contextual Info: 76 - - 2 * S G 3 0 0 r R, U. W, E X jll SG 300G r j 1 i ! T-40 S G 3 0 0 rR, ü, E X j 12 SG 300G r j 12 : T - 4 1 ( I 3 - 2 8 A 2 A O J - 3 •'/'<, W, 3 - 2 8 A 1A ) te -f- I rrm -i Vgt I gt Ä a = 0.5Q I grm SG300R11 SG300R12 ie SG300U11 SG300U12 SG300W 11

359RGA

Abstract: 4a2d SG2700EX22 ALPs vcr SG2700R22 SG2700W22 SG15G 13-I20A1A S108B 178RS
Contextual Info: - 89 * SG 2700 R, U, W, • E X j2 2 T-36 Æ'I ÍRRM nC "7 SC2700R22 SG2700U22 SG2700W22 SG 2700EX22 15 Vrrm 1300 VpRM I tq r m 1 1600 2700 i V d — 1 /2 V drm , 1800 1 2500 R s= 5 C l A 800 T / = 7 0 ‘C ) I t ( RMS) I tsm Cs= 6 j j F , íí V 1 V hm — % V d r m ,

SG2500GXH22

Abstract: SG2500GXH21 gp40a SG2500FXF21 TT 105 N 14
Contextual Info: 88 - - 2 * S G 2 5 0 0 rF X F , G X H j2 l T-36 V R R M m â m □L SG 2500G XH 21 tt SG 25 0 0FX F2 1 Ffifi.W 3000 4000 V drm 3300 4500 I tq sm 2500 ( V d ~ Vz V d r m , /t i RMS) f r sM (V R R M ) C¡= 6 ^ F , V dm = % V d r m . R — 2 0 ÍÍ. (V R R M )

Honeywell 38240 meylan

Abstract: principle of working of emergency light FF-SRL60252 principle of working of emergency light and alarm FSD-21 advanced Honeywell 38240 FF-SG30 38240 FF-SXZCOM128 FR26
Contextual Info: FF-SG Series Safety light curtain Compact and cost-effective unit FEATURES • Active Optoelectronic Protective Device compliant with the requirements of the IEC/EN 61496-1 and IEC/EN 61496-2 European norms for Type 4 electrosensitive protective equipment

117AG

Abstract: 117AIG M38510/11704BYA SG317R SG117A SG317A SG317 SG117 2N3906 SMD pot 100K smd
Contextual Info: SG U 7A/SG217A/SG317A SG117/SG217ISG317 SIL IC O N GENERAL LINEAR INTEG RATED C IRCUITS 1.5 AM P THREE TERMINAL ADJUSTABLE VOLTAGE REGULATOR DESCRIPTION FEATURES The SG117A Series are 3-terminal positive adjustable voltage regulators which offer improved performance over the original 117

SGS100MA010D1

Abstract: S100M schematic diagram reverse forward motor
Contextual Info: SGS-THOMSON SG S100M A010D 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V DSS ^D S on SGS100MA010D1 100 V 0.014 a • • • • • Id 120 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE EASY TO PARALLEL INDUSTRIAL APPLICATIONS:

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. ,19 LOC ALL RIGHTS RESERVED. REVISIONS DIST DF SO LTR DESCRIPTION REV £ REDRAWN;0600-6242-97 DATE DUN APVD 4-97 CT SG D D SOCKET; SIZE #16 (QTY=2) M A T 'L : Be Cu PER ASTM-B-196

SC-0351

Contextual Info: rrr “ 7# sg s -th o m s o n m m s x m iim m im m b u lth s d HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . NPN TRANSISTOR . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE • HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR

Contextual Info: Œ fï . SG S-IHO M SON l[Li ïï[ÊMO©S SD1731 TH562 RF & M ICRO W AVE TR AN SISTO R S HF SSB APPLIC ATIO N S . OPTIMIZED FOR SSB • 30 MHz ■ 50 VOLTS . EFFICIENCY 40% . COMMON EMITTER ■ GOLD METALLIZATION > P o u t = 220 W PEP WITH 13 dB GAIN PIN CONNECTION

501LT

Abstract: SG400W22 SG500FXF21 SG400EX22 SG400R22 SG400U22 3-60E3A
Contextual Info: - 77 - * S G 4 0 0 R, U, W, 3 + 3 V-, b£ <W < - •§" I rrm I drm ¡CRM ■ e * a $ ¿ti »j SG400R22 SG400U22 SG400W22 1300 | 1600 I tqrm 400 W d = V ¿ Vdrm, h RMS 150 i T /= 7 0 °C ) I tsm SG 40 0 EX2 2 I gfm P cravi /CR(RMS) P g HM Vg r m it V dm

SG800GXH22

Abstract: 50Hzr SG800FXF21 SG800FXF22 SG800GXH21 T-47 S108B1 2AF LO 250/6 0 R – V P H 05-Y
Contextual Info: 81 - - * SG800rFXF, GXHj2 1 VRRM 2 T-43 (I3-60E3A) • fl- O T # - * O f 3 7 ' ' :, sd ,i'i I rrm 3d ^ SG 800GXH21 ( V R R M ) S G 8 0 0 FX F2 1 ( V R R M ) Vrrm 3000 4000 V d rm 3300 4500 I tq r m I t <RMS) I tsm 800 { V d= /2 V d r m , 1 V d m — % Vd r m ,

SG1400EX21

Abstract: 110T SG1500FXF21 SG1500GXH21 T-48
Contextual Info: - 84 m T-35 S G 14 0 0 E X 2 1 o f - ? * ig L i7 * Œ 2500V, 700A M A = 20 S3, *1 iil! 7/ SG 14 0 0EX 21  H W C ,= 2 mF # í¿ É yu ÎRRM T , = 1 1 5 °C , *t. £ *2 V d = V drm *2 500 V IllRM T , = 115’C , 2500 V V tm T c = 2 5 °C , / = 1400A 1400 * l

SG2000

Abstract: SG2000FXF21 SG2000GXH21 SG2000U22 SG2000W22 T-48 SG2000EX22 RT125C SG200-01
Contextual Info: - 87 m SG 2 0 0 0 rFX F, G X H j2 l T-36 V R R M 0^ iliia ÎRRM uti SG2000GXH21 ( V R R M ) S G 2 0 0 0 FX F2 1 ( V R R M ) Ç V rrm 3000 4000 V drm 3300 4500 2000 ( Itqrm V ükm , Vdm = % V d r m , C j= 6 / * F , R 5= 2 0 îî, ¥ Ty = 115°C) A 800 ( 77= 70°C)

JEP-106

Abstract: JEP106 gmm7644143csg
Contextual Info: GMM7642143CNS/SG-6/7 LG Semicon Co.,Ltd. 2,097,152 W O R D S x 64 B IT CMOS EDO DYNAMIC RAM MODULE Description Features T he G M M 7 6 4 2 143C N S /S G is a 2M x 64 bits • 168 p in s D ual In-L ine Package - G M M 7 6 4 2 1 4 3 C S N G : G old plating • E xtended D ata O ut E D O M ode C apability

MG150H2YL1

Abstract: MG100H2CL1 MG200H2CK1 MG80S2YK1 MG100G2YL1 MG150G2YL1 mg100h2ck1 MG150M2YK1 MG100G2CL1 MG75M2CK1
Contextual Info: -221 sg - 2 p V cc * * 9 & U a # l= 0 . 5 * 4 • y ^ > r ^ r i * E n « t y p . « 0 u z . T . tâ fo m Œ (V X 'f I c il + I B on ? • 3 V y 91ï ï y j t - V m & iK i u s) I B V BE V cE x i = 2 5°C ) I b; V cc R i , t . (V ) I F ( u s) % 1 p V be

1ss237

Abstract: 1SS239 1SS276 1SS281 HSR276 1SS271 1SS283 1SS286 iss319 1SS246
Contextual Info: w 8= sss ss S „2 2 121 i d tt’ t t ’ i f i f i ; S 5 3 Sg 0 .0 5 0. 1 O a u . <3 a . ^ S- " 1 ï i B g g 0. 9 S S If 50 S 5 « S 0. 01 ¿ ¿ K c c i S S S ^ O 0. 5 tiri 0. 7 ^ g 35* 30 CM CsJ . .m o u i 150 >• S i 0. 5 0. 5 % % rs r- 1 V 30 O LT> o o

1SS283

Abstract: 1SS281 HSR276 iss319 1SS276 1SS237 1SS239 1SS246 1SS271 1SS282
Contextual Info: w 8= sss ss S „2 2 121 i d tt’ t t ’ i f i f i ; S 5 3 Sg 0 .0 5 0. 1 O a u . <3 a . ^ S- " 1 ï i B g g 0. 9 S S If 50 S 5 « S 0. 01 ¿ ¿ K c c i S S S ^ O 0. 5 tiri 0. 7 ^ g 35* 30 CM CsJ . .m o u i 150 >• S i 0. 5 0. 5 % % rs r- 1 V 30 O LT> o o

1SS281

Abstract: 1SS246 1SS237 HSR276 1SS239 1SS271 1SS276 1SS282 1SS283 1SS285
Contextual Info: w 8= sss ss S „2 2 121 i d tt’ t t ’ i f i f i ; S 5 3 Sg 0 .0 5 0. 1 O a u . <3 a . ^ S- " 1 ï i B g g 0. 9 S S If 50 S 5 « S 0. 01 ¿ ¿ K c c i S S S ^ O 0. 5 tiri 0. 7 ^ g 35* 30 CM CsJ . .m o u i 150 >• S i 0. 5 0. 5 % % rs r- 1 V 30 O LT> o o

1SS283

Abstract: 1SS281 1SS276 1SS237 HSR276 1SS239 1SS246 1SS271 1SS282 1SS285
Contextual Info: w 8= sss ss S „2 2 121 i d tt’ t t ’ i f i f i ; S 5 3 Sg 0 .0 5 0. 1 O a u . <3 a . ^ S- " 1 ï i B g g 0. 9 S S If 50 S 5 « S 0. 01 ¿ ¿ K c c i S S S ^ O 0. 5 tiri 0. 7 ^ g 35* 30 CM CsJ . .m o u i 150 >• S i 0. 5 0. 5 % % rs r- 1 V 30 O LT> o o