SG 27 SURGE CURRENT Search Results

M10S1

Abstract: SG DO-214AC
Contextual Info: S1A thru S1M Surface Mount Glass Passivated Rectifier Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA 0.065 (1.65) Features 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) • Plastic package has Underwriters Laboratory Flammability Classification 94V-0

n551

Abstract: ATT220A BYW51 BYW51-200 BYW51F-200 T0220AB N409
Contextual Info: SCS-THOMSON RfflDte^OmLKeTTIRiOKlDtSS B Y W 5 1 F HIGH E FFIC IEN C Y FAST RECO VERY R EC TIFIER DIODES FEATURES • ■ ■ ■ ■ ■ SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY

marking aj

Abstract: S1M DO-214AC
Contextual Info: S1A thru S1M Surface Mount Glass Passivated Rectifier Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA 0.065 (1.65) Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) 0.066 MIN. (1.68 MIN.) 0.094 MAX. (2.38 MAX.) 0.177 (4.50) Dimensions in inches

TA84007PQ

Contextual Info: TA84007PQ/SG/FG Preliminary TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA84007PQ,TA84007SG,TA84007FG DC Motor Full Bridge Driver ICs Forward/reverse switching driver ICs The TA84007PQ, TA84007SG and TA84007FG are bridge driver ICs designed for forward/reverse rotation switching and that are

BT2012

Abstract: THBT20012
Contextual Info: [ Z J SG S-TH O M SO N ÌD M E M 0 K I THBT150 THBT200 / THBT270 TRISIL FEATURES • BIDIRECTIONAL TRIPLE PROTECTION ■ CROWBAR PROTECTION . PEAK PULSE CURRENT: Ipp = 30 A , 10/1000 |is ■ HOLDING CURRENT = 150 mA min ■ AVAILABLE IN DIP 8 AND SO 8 PACKAGES

Contextual Info: TOSHIBA U1GWJ44 Ul G W J 4 4 TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Average Forward Current : Ijr AV = 1-0A Low Forward Voltage : V fm = 0.55 V (Max.) Surface Mounting Plastic Mold Package

GENERAL SEMICONDUCTOR MARKING SJ SMA

Abstract: VISHAY MARKING SG SMA S1JHE3/61T VISHAY MARKING SG s1jhe3 S1JHE3/5AT s1m marking code VISHAY S1M S1JE3 SMA DO-214AC SA
Contextual Info: S1A thru S1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability

Contextual Info: S G S -ÏH O M S O N KÆ0ra@[EL[iûre ^0 i BZV47C5V1 / 200 2W ZENER DIODES FEATURES • VOLTAGE RANGE :5 .1 V to 200 V ■ HERMETICALLY SEALED P LA S TIC C ASE: F126 PACKAGE ■ HIGH SURGE C A P A B ILITY : 55 W 10 m s . DESCRIPTION 2 W silicon Zener diodes.

SMA MARKING S1G

Abstract: SURFACE MOUNT DIODES MIL GRADE
Contextual Info: S1A thru S1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability

Contextual Info: SG S-ÏHO M SO N mœmieraiMOSS BZW04-5V8/376 BZW04-5V8B/376B TRANSIL FEATURES • PEAK PULSE POWER: 400 W 10/IOOQus ■ STAND-OFF VOLTAGE RANGE: From 5.8V to 376 V ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR ■ FAST RESPONSE TIME ■ UL RECOGNIZED

GV 475 diode

Abstract: telephone transmission circuit 20PIN 24PIN LAG640 LAG640D sound generator circuit power off delay timer circuit diagram TD422
Contextual Info: IC for Multifunction Telephones LAG640 MITSUMI IC for Multifunction Telephones Monolithic IC LAG640 Outline This IC was developed for use in multifunctional telephones with security features; it has the following functions. Features 1. Incorporates efficient switching regulator with broad input voltage range

11EQS09

Abstract: 11EQS10
Contextual Info: SCHOTTKY BARRIER DIODE 11EQS09 11EQS10 1.1A/90— 100V FEATURES o Miniature Size <3l ° Low Forward Voltage Drop 2.7C.106 .DIA MAX 0.601024) p , «s 0.54 .Q21) .27(1.06) MIN Low Power Loss, High Efficiency ° High Surge Capability » 20 Volts thru 100 Volts Types Available

Contextual Info: LTC3766 High Efficiency, Secondary-Side Synchronous Forward Controller DESCRIPTION FEATURES n n n n n n n n n n n n n Direct Flux Limit Guarantees No Saturation Fast and Accurate Average Current Limit Clean Start-Up Into Pre-Biased Output Secondary-Side Control for Fast Transient Response

Contextual Info: New Product S1A thru S1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability

VISHAY MARKING SG SMA

Abstract: JESD22-B102 J-STD-002 GENERAL SEMICONDUCTOR MARKING SJ SMA marking code s1a
Contextual Info: S1A thru S1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability

50-150B

Contextual Info: S G S - Ï H O M S O N m œ m ie r a M o s s B Z W 5 0 - 10 , B/18 0 , B TRANSIL FEATURES • PEAK PULSE POWER : 5000 W 10/1 OOO^s ■ STAND-OFF VOLTAGE RANGE: From 10V to 180 V ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR ■ FAST RESPONSE TIME

Contextual Info: MITSUBISHI ICs TV M52766FP PLL SPLIT V IF / SIF DESCRIPTION The M52766FP is a semiconducttor 1C with PLL system of VIF/ SIF. The circuit includes video UF amplifier,PLL video detector, IFAGC,RFAGC,VCO, AFT, LOCK DET,EQ,REG,QIFamplifier,QIF detector,QIF AGC,LIM,FM

earth leakage diagram

Abstract: Circuit breaker Mitsubishi MD234 M54125L M54125P Power Circuit breaker Mitsubishi WF capacitor EARTH LEAKAGE CURRENT DETECTOR
Contextual Info: MITSUBISHI <CONTROL / DRIVER IC> M54125L/P EARTH LEAKAGE CURRENT DETECTOR DESCRIPTION The M54125 is a semiconductor integrated circuit consisting of an amplifier for high-speed earth leakage circuit breaker. PIN CONFIGURATION TOP VIEW Capacitor MM → ← 1

mde 108 27.0

Contextual Info: SGS-ÏHOMSON SM15T6V8A/220A SM15T6V8CA/220CA KÆD ^ [EL[iOÏÏ^®^D gi TRANSIL FEATURES • PEAK PULSE POWER: 1500 W (10/1000|is ■ BREAKDOWN VOLTAGE RANGE : From 6.8 V to 220 V ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR ■ FAST RESPONSETIME

TIP 27

Abstract: RLR RESISTORS HC5526 HC5526CM PBL3764 ERICSSON PABX
Contextual Info: HC5526 TM Data Sheet October 2000 ITU CO/PABX SLIC with Low Power Standby • DI Monolithic High Voltage Process The HC5526 is fabricated in a High Voltage Dielectrically Isolated DI Bipolar Process that eliminates leakage currents and device latch-up problems normally associated

SG 14 DIODE SMa

Abstract: General Semiconductor diode marking UG MARKING TK DO-214AA T75A 214B CD214A CD214A-T33A Diode marking ug DIODE MARKING code UG 45
Contextual Info: PL IA NT CO M *R oH S Features • ■ ■ ■ ■ Model CD214A is currently available, although not recommended for new designs. Model SMAJ is preferred. Lead free RoHS compliant* Surface Mount SMA package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 400 watts

VISHAY S1M

Abstract: VISHAY MARKING SG SMA S1J VISHAY GENERAL SEMICONDUCTOR MARKING SJ SMA SMA MARKING S1G S1M HE3
Contextual Info: S1A thru S1M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability

GTO catalogue

Abstract: SG1000EX23 toshiba gto
Contextual Info: 3. METHOD OF USE 3.1 METHOD OF USE FOR GTO 3.1.1 G a te Triggering Characteristics Supplying a gate cu rren t to such th y risto rs as GTO, etc., switches them from the off-state to the on-state. T h y ris to r gate characteristics include gate trigger voltage, gate trigger current, gate non-trigger voltage,

ULTRA SMALL HIGH VOLTAGE DC RELAY

Abstract: PASI
Contextual Info: FTR-J2 Series Ultra small High Voltage DC Relay FTR-J2 Series RoHS compliant n Features l 10A, 450V DC high-voltage switching l Contact voltage drop: typical 0.1V l Inrush Current 150A Capacitive load l Compact size ( L x W x H = 24 x 23.5 x 27mm ) l 2 x 1 form A