SFET Search Results

FN521

Abstract: FN 521 UFN522 UFN523 UFN520
Contextual Info: POWER SFET TRANSISTORS UFN520 100 Volt, 0.3 Ohm N-Channel UFN522 UFN523 DESCRIPTION The U nitrode power M O SFET desig n u tilizes the m ost a dvan ced technology available. This efficient design a ch ieves a very low Rosiom an d a high tran scon d u ctan ce.

UFN450

Abstract: UFN451
Contextual Info: POWER SFET TRANSISTORS Hfflg? 500 Volt, 0.4 Ohm N-Channel UFN452 UFN453 DESCRIPTION The U nitrode power M O SFET desig n u tilizes the m ost a dvan ced technology available. This efficie n t design a ch ieves a very low Rosiom and a high tran scon d u ctan ce.

2N6797

Contextual Info: POWER SFET TRANSISTORS JTX JTXV 200 Volt, 0.4 Ohm N-Channel DESCRIPTION The U nitrode power M O SFET design u tilizes the m ost advanced technology available. This efficien t design ach ieves a very low Rosiom and a high transconductance. FEATURES • Fast Sw itching

Contextual Info: S U R -g!“ 16DY Vishay Siliconix N-Channel 30-V D-S SFET New Product V M (VJ *BS (O N) lo (A l 0 .018 @ V GS = 10 V ± 9 .0 0 .028 & Vqs = 4.5 V ± 7 .3 30 D D D D ú p SO-8 0 - I& 1 Ô s N-Channel M O SFET A B S O L U T E M A X IM U M

Contextual Info: s, AP A d va n c e d P e rfo rm a n c e Series V DSs = 2 5 0 V 206 3 N Channel Power M O SFET £4321 F e a tu re s •Low ON resistance. ■Very high-speed switching. • Low-voltage drive. • M icaless package facilitating mounting. A b so lu te M ax im u m R a tin g s a t Ta = 25°C

Contextual Info: SÌ6925DQ Vishay Siliconix Dual N-Channel 2.5-V G-S SFET v » (V) H d SIOH) (Û ) A •d (A) 0.05 @ V GS = 4.5 V 0 .0 6 V q S = 3.0 V 0.08 @ V e s = 2.5 V Di Q D2 Q TSSOP-8 <J2 o -i Top View Ô s2 N -Channel SFET PARAMETER SYMBOL N-Channel MO SFET

Si9959

Abstract: SI9910 AN90 siliconix
Contextual Info: SA Member S ioflthei cT o nGroupi x AN90-5 emic Low-Voltage Motor Drive Designs Using N-Channel Dual SFETs in Surface-Mount Packages Jim H am den Two basic M O SFET configurations are used in low-voltage m otor drives — the n-channel half-bridge and the p- and n-channel com plem entary half-bridge. T he

2SK1904

Contextual Info: 2SK1904 LD L o w D rive S eries VDs s = 1 0 0 V 2063 N Channel Power M O SFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •M icaless package facilitatin g m ounting. A b so lu te M ax im u m R a tin g s a t T a = 25°C

Contextual Info: Temic Silicon»:_ S.9939DY D ual E nhancem ent-M ode M O SFETs N- and P-Channel Product Summary V d s (V) rDS(on) ( ß ) I d (A) 0.05 @ VGS = 10 V ±3.5 0.07 @ VGs = 6 V ±3 0.08 @ VGs = 4.5 V ±2.5 0.10 @ VGs = - ±3.5 30 iov 0.12 @ VGS = —6V

Contextual Info: SÌ9804DY Vishay Siliconix N-Ch Reduced Qg, Fast Switching SFET cH Vo s V Rds(ON) (f ì ) Id (A) 0.023 @ V q s = 4.5 V ±7.8 0.030 V GS = 3.0 V ±6.8 25 D Q SO-8 Ô S N-Channel M O SFET SYM B O L P A R A M ETER LIMIT Drain-Source Voltage Vos 25 Gate-Source Voltage

IRFC430

Abstract: irfg 40 IRFC330 IRFC120 stf460 IRFCG40 IRFC420 IRFCF30 stf250 IRFC440
Contextual Info: SFETS N CHANNEL PO W ER M O SFETS PACKAGE T0213AA TO-66 PACKAGE T0204 (TO-3) DEVICE TYPE bvdss VOLTS STFJ120 100 STFJ130 RDS(ON) @0.5 'D OHMS •d CONTINUOUS AMPS PD MAX WATTS 40 CHIP 100 0.3 0.18 12.0 100 0.085 15.0 50 70 IRFG 30 STFJ140 STFJ220 0.8 5.0

Contextual Info: 2SK1452 2076 A P A d v a n c e d P e rfo rm a n c e S e rie s V DS3 = 4 5 0 V N Channel Power M O SFET 1 3455 Features • Low ON-state resistance. • Very high-speed switching. • Converters. • Micaless package facilitating mounting. A bsolute M axim um R atings at Ta = 25°C

Contextual Info: 2SJ232 LD L o w D rive S eries V DSs = 1 0 0 V 2085 P Channel Power M O SFET £.1381 7 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •Its height onboard is 9.5mm. ■M eets radial taping. A b so lu te M ax im u m R a tin g s a t Ta = 25°C

2SJ306

Contextual Info: 2SJ306 AP A dvanced Perform ance Series V dss = 2 5 0 V 2063 P Channel Power M O SFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •M icaless package facilitating mounting. b so lu te M axim um R a tin g s a t Ta = 25°C

S01Cb

Abstract: Si9750 Si9750CY
Contextual Info: T em ic SÌ9750 S e m i c o n d u c t o r s In-Rush Current Limit SFET Driver Features • 2.9- to 13-V Input O perating Range • M icroprocessor R E S E T • • Integrated H igh-S ide D river fo r N -C hannel M O SFET Program m able di/dt C urrent Description

003A

Abstract: 2SJ472-01L
Contextual Info: SPECIFICATION DEVICE NAME : Power M O SFET TYPE NAME 2S J472-01L.S : SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric Co.,Ltd. DRAW N CHECKED1 s 1/13 Y 0257-R-004a I 1.Scope This specifies Fuji Power SFET 2SJ472-01 L,S

Contextual Info: t 67C 00233 T? 4613303 HUGHES AIRCRAFT CO* HUGHES-, MICROWAVE PRDTS D* 7 ~ 3 9 - G S ~ □□□□233 fl | G aA sFET PR OD U CTS DESCRIPTION Hughes model number C2421H-1300 and C2422H-1300 are single cell and dual cell 13 GHz broadband GaAs power FET chips mounted on internally matched chip carriers. The

Contextual Info: 1 9 9 9 =M l C O N D U C T O R tm FDR838P P-Channel 2.5V Specified PowerTrench SFET General Description Features These P-Channel 2 .5 V specified M O SFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the

1X04

Abstract: TRANSISTOR MOSFET K 1249 IRFI064
Contextual Info: Data Sheet No. PD-9.876 INTERNATIONAL RECTIFIER TOR AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFIQ64 a] N-CHANNEL 60 Volt, 0.017 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier's advanced line of power M O SFET transistors.

IRF1Bc40g

Abstract: IRF1BC40 IRF1BC40GLC SAJ 220 IRFIBC40GLC 7z mosfet ID37A
Contextual Info: PD-9.1211 International S Rectifier IRFIBC40GLC HEXFET Pow er M O SFET Isolated Package High Voltage lsolatlon= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V DSS = 600V R DS on = 1 In = 3.5A D escription Third Generation HEXFETs from International Rectifier provide the designer

Contextual Info: SÌ9428DY ▼ N-Channel 2.5-V G-S SFET New Product PRODUCT SUMMARY v „s (V) r d s (ON) (q ) lD (A) 0.03 @ V GS = 4.5 V ±6 0.04 @ V GS = 2.5 V ± 5 .2 20 Di Dì Q Q SO-8 o Si N-Channel M O SFET

2N6788 motorola

Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111
Contextual Info: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power SFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles

2N6764

Abstract: 2N6763 27812
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DË 3 4 ^ 7 4 3469674 F AIRCHILD SEMICONDUCTOR □□27Û1D 1 J - 84D 2 7 8 1 0 D 2N6763/2N6764 T - *7-/3' N-Channel Power M O SFETs, 38 A, 60 V/100 V' F A IR C H IL D A Schlumberger Company Power And Discrete Division TO-2Q4AE

IRF540R

Abstract: RF540 trf540 IRF542R IIRF543R IRF541R IRF543R 250TI
Contextual Info: Rugged Power M O IRF540R, IRF541R IRF542R, IRF543R File Num ber 2009 Avalanche Energy Rated N-Channel Power SFETs 27A and 24A, 100V-60V rDs on = 0.0850 and 0.11fi TERMINAL DIAGRAM D Features: