SF10N Search Results

Contextual Info: MOTOROLA O rder this docum ent by M M SF10N02Z/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M SF10N 02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel w ith M onolithic Zener ESD Protected G ate EZFETs™ are an advanced series of power MOSFETs which

SF10G13

Abstract: SF10F13 VG207B 207B SF10L13 SF10N13 SF10B13 SF10D13 VG-207B TOSHIBA THYRISTOR
Contextual Info: TOSHIBA {DISCRETE/OPT0> 3T T^AS'-AST D e I ^ G ^ E S O ODDSETO 3 PH A SE CUIM I KUL T H Y R IS T O R SF10N13 1000V M AXIMUM RATINGS C H A R A C T E R IS T IC SF10B13 SF10D13 Repetitive Peak Off-State Voltage SF10F13 and Repetitive SF10G13 Peak Reverse S F 10J 13

SF10NC15M

Contextual Info: SHINDENGEN Schottky Rectifiers SBD SF10NC15M Dual OUTLINE DIMENSIONS Case : FTO-220A Unit : mm 150V 10A RATINGS Absolute Maximum Ratings iTc=25Ž unless otherwise specifiedj Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj

Contextual Info: 2 /a v h + - KU7 S W - I * y j y a Twin Diode Schottky Barrier Diode O UTLINE D IM E N S IO N S SF10NC15M 150 V 10A • T jl5 0 ° C • 7 IÆ • - ) b K Î Ü § it J ± 2 k V ff ig l • I r = 0.2 m A m m # y - h p c , l c d =E-s>-my^ys>© 2 2 K H 8 3 Î5

SF50L13

Abstract: SF50J13 R712X SF16Q13 SF30J13 SF30Q13 SF25G13 SF10J13 SF10J41 SF10J41A
Contextual Info: - 20 * $ g tt € Vr s m V SF10J13 SF10J41 SF10J41A SF10JZ47 SF10L13 SF10N13 SF16B13 SF16B14 SF16D13 SF16D14 SF16F13 SF16G13 SF16G14 SF16GZ51 SF16J13 SF16JZ51 SF16L13 SF16N13 SF16Q13 SF25D13 SF25F13 SF25G13 SF25GZ51 SF25J13 SF25JZ51 SF25L13 SF25N13 SF25Q13

Contextual Info: MOTOROLA O rder this docum ent by M M SF10N03Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M SF10N 03Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Single N-Channel with Monolithic Zener ESD Protected Gate EZFETs are an advanced series of power MOSFETs which utilize

MSG100L41

Abstract: TSS1G41 SF5B42 SM6G14 TSS2G41 1J44 1J-44 TSS25J47S TSS2J2A44S f0r3g
Contextual Info: •A L P H A N U M E R IC A L IN D E X # Type No. CU16J6S3 CU16L6A3 CU16Q6S3 CU30J6S3 CU30L6A3 CU30Q6S3 CU50J6S3 CU50L6A3 CU50Q6S3 CU80J6S3 CU80L6A3 CU80Q6S3 CU80U6A3 CU150J6S3 CU150L6A3 CU150Q6S3 CU150U6A3 CU300J6S3 CU300F6A3 CU300Q6S3 CU300U6A3 MSA60G41

FOR5J

Abstract: GTO thyristor 100A, 400V TO-220AH TSZ25G 5F13 TSS1G41 s6565g GTO thyristor 5A, 400V MSG100L41 TSS2G41S
Contextual Info: [ Thyristors P h a s e Control T h yristo rs : * i'eak off state v<>!t,tK<‘ and tewrse voilage Average "n-state current 50V 0. IA 0.3A 0.5A IA 2A S F 0 K ÎA 4 2 3A 100V SF0 R 1 H 4 2 SF0 R 3 H 4 2 SFOH5H43 SM H12 S F2 B 4 1 SF3 H 1 4 SF3H41 SF3 H 4 2 SF5 H 1 3

SF-11N

Abstract: SF-31N FXR SF-31N BNC T connectors INSERTION LOSS Microlab FXR QQ-S-365 SF-10B SF-10F SF-10N SF-10T
Contextual Info: MICROLAB/FXR Double Slug Tuners SF series ♦ ♦ ♦ ♦ ♦ ♦ Dual Impedance Transformer 300 to 5,000 MHz Ideal for Amplifier Stability Testing Adjustment Locking Long Life Beryllium Copper Contacts 500 Watt Average Power Rating N Connectors Standard Noise Free Operation

ST AC51

Abstract: SF10L13 SF10D F10N13
Contextual Info: SF10 B,D,F,G,J,L,N 13 THYRISTOR SILICON DIFFUSED TYPE Unit M E D I U M P O W ER C O N TR OL A PPLICATIONS. in m m 01dbMAX. FEATURES: . R e p e t i t i v e Peak O f f-Stal e V o lt age R e p e t i t i v e Pea k Rever se V o l t a g e Vl)RM . A v e r a g e O n - S t a t e Current

Contextual Info: MOTOROLA Order this document by SF10N02Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M S F10N 02Z Medium Power Surface Mount Products TMOS Single N -Channel w ith M onolithic Zener ESD Protected G ate M o to r o la P re fe rre d D e v ic e EZFETs are an advanced series of power MOSFETs which

SM6G14

Abstract: triac 400v 80a GTO 100A 750V S6080b SM16G14 SH5J12U TOSHIBA PHASE CONTROL HIGH SPEED THYRISTORS 6111 triode TRIAC 1000A triac 1200V 50A
Contextual Info: 9097250 TOSHIBA DISCRETE/OPTO 39C 0 2 2 1 6 3T DEj|TOTTSSGQ00E21b & THYRISTORS \ I PH A SE CO N TRO L THYRISTO RS Average On-State Current I P .4 8 -P .8 1 - » P e a k O f f - S ta te V oltage and R e v e rs e V oltage 100 V 200V O .IA SF 0R 1B 42 S F O R I D42

S78DM12Q

Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
Contextual Info: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power

f10nc15m

Abstract: F10NC15 SF10NC15M marking WMM SF-10N
Contextual Info: Schottky Barrier Diode Twin Diode SF 10 N C 15 M Wtm OUTLINE 150 V 10 A Feature • Tj=150°C • Tj=150°C • • Full Molded 7 lÆ -JU K • fîlR=0.2mA • Low lR=0.2mA • if & f lÆ S Ê ê C U C C U • « 1 IÎE 2kV«E • Resistance for thermal run-away