SEMIX302GAL12E4S Search Results

Contextual Info: SEMiX302GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V

SEMiX302GAL12E4s

Contextual Info: SEMiX302GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C

igbt

Contextual Info: SEMiX302GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GAL12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V

Contextual Info: SEMiX302GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C

Contextual Info: SEMiX302GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C

SEMIX353GB126V1

Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
Contextual Info: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots