SEMIX3 Search Results
SEMIX3 Datasheets (43)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| SEMIX302GAL066HD |
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Trench IGBT Modules | Original | 904.46KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMIX302GAL126HD |
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Trench IGBT Modules | Original | 1.28MB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMIX302GAL12T4S |
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Trench IGBT Modules | Original | 1.07MB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMIX302GAR066HD |
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Trench IGBT Modules | Original | 904.45KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMIX302GAR126HD |
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Trench IGBT Modules | Original | 1.28MB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMIX302GAR12T4S |
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Trench IGBT Modules | Original | 1.07MB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMIX302GB066HD |
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Trench IGBT Modules | Original | 904.44KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMIX302GB066HDS |
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Trench IGBT Modules | Original | 1.05MB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMiX302GB126HD |
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Trench IGBT Modules | Original | 526.99KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMIX302GB126HD |
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Trench IGBT Modules | Original | 1.28MB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMiX302GB126HDs |
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Trench IGBT Modules | Original | 1.27MB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMiX302GB128D |
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SPT IGBT Modules | Original | 526.98KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMIX302GB128DS |
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SPT IGBT Modules | Original | 1.29MB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMIX302GB12T4S |
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Trench IGBT Modules | Original | 1.07MB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| SEMiX302GB176HD |
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Trench IGBT Modules | Original | 526.99KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMIX302GB176HDS |
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Trench IGBT Modules | Original | 515.8KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMiX302KD |
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Rectifier Diode Module | Original | 172.15KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMiX302KD16s |
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Rectifier Diode Module | Original | 172.15KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMiX302KH |
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Rectifier (Thryr./Diode) Module | Original | 310.71KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMiX302KH16s |
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Rectifier (Thryr./Diode) Module | Original | 310.71KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SEMIX3 Price and Stock
Fischer Elektronik GmbH & Co KG WFK-25-62-X-122-L-SEMIX-3PThermally conductive foil made o |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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WFK-25-62-X-122-L-SEMIX-3P | Bulk | 2 |
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Buy Now | ||||||
Fischer Elektronik GmbH & Co KG WFK-18-62-X-122-L-SEMIX-3LPThermally conductive foil made o |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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WFK-18-62-X-122-L-SEMIX-3LP | Bulk | 2 |
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Buy Now | ||||||
Fischer Elektronik GmbH & Co KG WFK-25-62-X-122-L-SEMIX-3LPThermally conductive foil made o |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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WFK-25-62-X-122-L-SEMIX-3LP | Bulk | 2 |
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Buy Now | ||||||
Fischer Elektronik GmbH & Co KG WFK-60-K-62-X-122-L-SEMIX-3PThermally conductive foil made o |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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WFK-60-K-62-X-122-L-SEMIX-3P | Bulk | 1 |
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Buy Now | ||||||
Fischer Elektronik GmbH & Co KG WFK-35-G-62-X-122-L-SEMIX-3LPThermally conductive foil made o |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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WFK-35-G-62-X-122-L-SEMIX-3LP | Bulk | 2 |
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Buy Now | ||||||
SEMIX3 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SEMiX303GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 466 A Tc = 80°C 359 A 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 338 A Tc = 80°C 252 A 900 A -40 . 175 °C ICRM = 3xICnom VGES |
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SEMiX303GB12T4s | |
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Contextual Info: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GAR12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V |
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SEMiX302GAR12E4s E63532 | |
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Contextual Info: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V |
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SEMiX302GB12E4s SEMiX302GB12E4s E63532 | |
CS 5800Contextual Info: SEMiX302GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 448 A Tc = 80 °C 342 A 300 A ICnom ICRM SEMiX 2s VGES tpsc Tj ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V 900 A -20 . 20 V 10 |
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SEMiX302GB12Vs SEMiX302GB12Vs E63532 CS 5800 | |
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Contextual Info: SEMiX353GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 364 A Tc = 80 °C 256 A 225 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX353GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V |
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SEMiX353GB126HDs SEMiX353GB126HDs E63532 Inv11: | |
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Contextual Info: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C |
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SEMiX302GB12E4s E63532 | |
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Contextual Info: SEMiX341D16s Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 348 A Tc = 100 °C 267 A Tj = 25 °C 2500 A Tj = 130 °C 2000 A Tj = 25 °C 31250 A²s Tj = 130 °C 20000 A²s VRSM 1700 V VRRM 1600 V -40 . 130 °C -40 . 125 °C 1 min 4000 |
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SEMiX341D16s E63532 | |
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Contextual Info: SEMiX302GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1700 V Tc = 25 °C 308 A Tc = 80 °C 219 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 10 µs -55 . 150 °C |
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SEMiX302GB176HDs E63532 | |
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Contextual Info: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C |
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SEMiX302GAR12E4s E63532 | |
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Contextual Info: SEMiX302GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 308 A Tc = 80 °C 219 A 200 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C |
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SEMiX302GB176HDs E63532 | |
VF-0240Contextual Info: SEMiX352GAR128Ds Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 377 A Tc = 80 °C 268 A 200 A ICnom ICRM SEMiX 2s SPT IGBT Modules SEMiX352GAR128Ds VGES tpsc Tj ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V |
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SEMiX352GAR128Ds E63532 VF-0240 | |
SEMiX353GD126HDcContextual Info: SEMiX353GD126HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 364 A Tc = 80 °C 256 A 225 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 2xICnom 450 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C |
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SEMiX353GD126HDc E63532 SEMiX353GD126HDc | |
C251AContextual Info: SEMiX353GD176HDc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 353 A Tc = 80 °C 251 A 225 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 2xICnom 450 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C |
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SEMiX353GD176HDc C251A | |
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Contextual Info: SEMiX352GAR128Ds Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 377 A Tc = 80°C 268 A 400 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 297 A Tc = 80°C 204 A ICRM = 2xICnom VGES SEMiX 2s SPT IGBT Modules |
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SEMiX352GAR128Ds | |
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Contextual Info: SEMiX302KT16s Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 300 Tc = 100 °C 230 A Tj = 25 °C 9300 A Tj = 130 °C 8000 A Tj = 25 °C 432000 A²s Tj = 130 °C 320000 A²s VRSM 1700 V VRRM 1600 V IT AV ITSM i2t SEMiX 2s sinus 180° |
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SEMiX302KT16s | |
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Contextual Info: SEMiX302GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 463 A Tc = 80°C 356 A 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 356 A Tc = 80°C 266 A 900 A -40 . 175 °C ICRM = 3xICnom VGES |
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SEMiX302GB12T4s | |
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Contextual Info: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
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SEMiX303GB12E4s E63532 AppliMiX303GB12E4s | |
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Contextual Info: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX303GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V |
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SEMiX303GB12E4s E63532 | |
SEMiX302GB12E4sContextual Info: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V |
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SEMiX302GB12E4s E63532 SEMiX302GB12E4s | |
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Contextual Info: SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 311 A Tc = 80 °C 218 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 10 µs -40 . 150 °C |
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SEMiX302GB126HDs E63532 | |
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Contextual Info: SEMiX303GD12E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
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SEMiX303GD12E4c E63532 | |
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Contextual Info: SEMiX303GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 448 A Tc = 80 °C 342 A 300 A ICnom ICRM SEMiX 3s ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 327 A Tc = 80 °C |
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SEMiX303GB12Vs E63532 | |
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Contextual Info: SEMiX303GD12Vc Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 448 A Tc = 80 °C 342 A 300 A ICnom ICRM SEMiX 33c ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 327 A Tc = 80 °C 244 |
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SEMiX303GD12Vc E63532 | |
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Contextual Info: SEMiX302KD16s Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 300 A Tc = 100 °C 240 A Tj = 25 °C 8500 A Tj = 130 °C 7500 A Tj = 25 °C 361000 A²s Tj = 130 °C 281000 A²s VRSM 1700 V VRRM 1600 V -40 . 130 °C -40 . 125 °C 1 min |
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SEMiX302KD16s | |