SEMIX302GB126HDS Search Results
SEMIX302GB126HDS Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SEMiX302GB126HDs |   | Trench IGBT Modules | Original | 1.27MB | 5 | 
SEMIX302GB126HDS Price and Stock
| SEMIKRON SEMIX302GB126HDSSEMIX; TRENCH IGBT MODULE; 1200V; 200A | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | SEMIX302GB126HDS | Bulk | 1 | 
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SEMIX302GB126HDS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| Contextual Info: SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 311 A Tc = 80 °C 218 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 10 µs -40 . 150 °C | Original | SEMiX302GB126HDs E63532 | |
| Contextual Info: SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 311 A Tc = 80 °C 218 A 200 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C | Original | SEMiX302GB126HDs E6353SEMiX302GB126HDs | |
| Contextual Info: SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 311 A Tc = 80 °C 218 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V | Original | SEMiX302GB126HDs E63532 | |
| Contextual Info: SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 311 A Tc = 80 °C 218 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V | Original | SEMiX302GB126HDs SEMiX302GB126HDs E63532 | |
| DIODE 35Contextual Info: SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 311 A Tc = 80 °C 218 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C | Original | SEMiX302GB126HDs E63532 DIODE 35 | |
| Contextual Info: SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 311 A Tc = 80°C 218 A 400 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 292 A Tc = 80°C 202 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules | Original | SEMiX302GB126HDs | |
| SEMIX353GB126V1
Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 
 | Original | SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 |