SEMIX1 Search Results
SEMIX1 Datasheets (15)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| SEMIX101GD066HDS |
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Trench IGBT Modules | Original | 1.02MB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMIX101GD126HDS |
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Trench IGBT Modules | Original | 1.03MB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMIX101GD128DS |
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SPT IGBT Modules | Original | 1.05MB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMIX101GD12T4S |
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Trench IGBT Modules | Original | 716.47KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMIX151GAL12T4S |
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Trench IGBT Modules | Original | 471.1KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMIX151GAR12T4S |
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Trench IGBT Modules | Original | 471.1KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMIX151GB12T4S |
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Trench IGBT Modules | Original | 471.09KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMIX151GD066HDS |
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Trench IGBT Modules | Original | 345.37KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMIX151GD126HDS |
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Trench IGBT Modules | Original | 343.92KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMIX151GD128DS |
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SPT IGBT Modules | Original | 344.02KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMIX151GD12T4S |
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Trench IGBT Modules | Original | 737.04KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMiX171KH |
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Rectifier Thyr./Diode Module | Original | 183.83KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMiX171KH16s |
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Rectifier Thyr./Diode Module | Original | 183.83KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SEMiX191KD |
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Rectifier Diode Module | Original | 181.24KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| SEMiX191KD16s |
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Rectifier Diode Module | Original | 181.24KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SEMIX1 Price and Stock
SEMIKRON SEMIX191KD16SRectifier Module, 1.6Kv, 190A, Semix 1S; Repetitive Peak Reverse Voltage:1.6V; Average Forward Current:190A; Forward Voltage Max:1.5V; Diode Module Configuration:1 Pair Series Connection; Diode Case Style:Module; No. Of Pins:3Pins Rohs Compliant: Yes |Semikron SEMIX191KD16S |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SEMIX191KD16S | Bulk | 8 |
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Buy Now | ||||||
SEMIKRON SEMIX151GB12VSIgbt, Module, 1.2Kv, 231A; Continuous Collector Current:231A; Collector Emitter Saturation Voltage:1.75V; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX151GB12VS |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SEMIX151GB12VS | Bulk | 8 |
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Buy Now | ||||||
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SEMIX151GB12VS | Bulk | 1 |
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Get Quote | ||||||
SEMIKRON SEMIX151GD12VSIgbt, Module, 1.2Kv, 231A; Continuous Collector Current:231A; Collector Emitter Saturation Voltage:1.75V; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX151GD12VS |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SEMIX151GD12VS | Bulk | 4 |
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Buy Now | ||||||
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SEMIX151GD12VS | Bulk | 1 |
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Get Quote | ||||||
SEMIKRON SEMIX151GB17E4SSemix151Gb17E4S |Semikron SEMIX151GB17E4S |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SEMIX151GB17E4S | Bulk | 8 |
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Buy Now | ||||||
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SEMIX151GB17E4S | Bulk | 1 |
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Get Quote | ||||||
SEMIKRON SEMIX151GB12E4SIgbt Module, Dual, 1.2Kv, 232A; Continuous Collector Current:232A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX151GB12E4S |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SEMIX151GB12E4S | Bulk | 8 |
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Buy Now | ||||||
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SEMIX151GB12E4S | 37 |
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Get Quote | |||||||
SEMIX1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SEMiX191KD16s Absolute Maximum Ratings Symbol Conditions Values Unit A Recitifier Diode Tc = 85 °C 190 Tc = 100 °C 145 A Tj = 25 °C 6000 A Tj = 130 °C 5000 A Tj = 25 °C 180000 A²s Tj = 130 °C 125000 A²s VRSM 1700 V VRRM 1600 V -40 . 130 °C -40 . 125 |
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SEMiX191KD16s | |
SEMiX101GD12VSContextual Info: SEMiX101GD12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 159 A Tc = 80 °C 121 A 100 A ICnom ICRM SEMiX 13 VGES tpsc Tj ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V 300 A -20 . 20 V 10 |
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SEMiX101GD12Vs SEMiX101GD12Vs E63532 | |
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Contextual Info: SEMiX141KT16s Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 140 Tc = 100 °C 105 A Tj = 25 °C 3400 A Tj = 130 °C 3000 A Tj = 25 °C 57800 A2s Tj = 130 °C 45000 A2s VRSM 1700 V VRRM 1600 V IT AV ITSM i2t SEMiX 1s sinus 180° |
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SEMiX141KT16s | |
SEMIX151GD12vContextual Info: SEMiX151GD12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 231 A Tc = 80 °C 176 A 150 A ICnom ICRM SEMiX 13 VGES tpsc Tj ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V 450 A -20 . 20 V 10 |
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SEMiX151GD12Vs SEMiX151GD12Vs E63532 SEMIX151GD12v | |
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Contextual Info: SEMiX151GD066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 200 A Tc = 80 °C 151 A 150 A ICnom ICRM SEMiX 13 Trench IGBT Modules ICRM = 2xICnom 300 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C |
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SEMiX151GD066HDs E63532 | |
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Contextual Info: SEMiX101GD12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 159 A Tc = 80 °C 121 A 100 A ICnom ICRM SEMiX 13 ICRM = 3xICnom 300 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 121 A Tc = 80 °C 91 |
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SEMiX101GD12Vs E63532 | |
SEMiX151GAL12E4s
Abstract: semix1
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SEMiX151GAL12E4s E63532 dEMiX151GAL12E4s SEMiX151GAL12E4s semix1 | |
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Contextual Info: SEMiX151GD12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 13 Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
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SEMiX151GD12E4s E63532 | |
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Contextual Info: SEMiX151GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules SEMiX151GAR12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V |
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SEMiX151GAR12E4s SEMiX151GAR12E4s | |
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Contextual Info: SEMiX101GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 129 A Tc = 80 °C 91 A 75 A ICnom ICRM SEMiX 13 Trench IGBT Modules SEMiX101GD126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V |
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SEMiX101GD126HDs E63532 | |
SEMIX151GD12E4SContextual Info: SEMiX151GD12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 13 Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
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SEMiX151GD12E4s E63532 AppliMiX151GD12E4s SEMIX151GD12E4S | |
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Contextual Info: SEMiX101GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 129 A Tc = 80°C 91 A 150 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 117 A Tc = 80°C 81 A A ICRM = 2xICnom VGES SEMiX 13 Trench IGBT Modules |
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SEMiX101GD126HDs | |
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Contextual Info: SEMiX101GD12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMiX 13 tpsc Trench IGBT Modules ICRM = 3xICnom VGES VCC = 800 V VGE ≤ 20 V Tj = 150 °C VCES ≤ 1200 V |
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SEMiX101GD12T4s E63532 | |
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Contextual Info: SEMiX151GAL12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 232 A Tc = 80°C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 189 A Tc = 80°C 141 A 450 A -40 . 175 °C Tc = 25°C 189 |
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SEMiX151GAL12T4s | |
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Contextual Info: SEMiX151GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules SEMiX151GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V |
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SEMiX151GB12E4s E63532 | |
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Contextual Info: SEMiX151GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 168 A Tc = 80 °C 119 A 100 A ICnom ICRM SEMiX 13 Trench IGBT Modules SEMiX151GD126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V |
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SEMiX151GD126HDs E63532 | |
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Contextual Info: SEMiX151GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 231 A Tc = 80 °C 176 A 150 A ICnom ICRM SEMiX 1s ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 189 A Tc = 80 °C |
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SEMiX151GB12Vs E63532 | |
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Contextual Info: SEMiX191KD16s Absolute Maximum Ratings Symbol Conditions Values Unit A Recitifier Diode Tc = 85 °C 190 Tc = 100 °C 145 A Tj = 25 °C 6000 A Tj = 130 °C 5000 A Tj = 25 °C 180000 A2s Tj = 130 °C 125000 A2s VRSM 1700 V VRRM 1600 V -40 . 130 °C -40 . 125 |
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SEMiX191KD16s | |
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Contextual Info: SEMiX101GD12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 160 A Tc = 80 °C 123 A 100 A ICnom ICRM SEMiX 13 tpsc Trench IGBT Modules ICRM = 3xICnom VGES VCC = 800 V VGE ≤ 15 V Tj = 150 °C VCES ≤ 1200 V |
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SEMiX101GD12T4s E63532 | |
MJ420Contextual Info: SEMiX151GD12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 13 tpsc Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
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SEMiX151GD12T4s E63532 MJ420 | |
SEMiX151GB12E4sContextual Info: SEMiX151GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
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SEMiX151GB12E4s E63532 SEMiX151GB12E4s | |
SEMIX101GD066Contextual Info: SEMiX101GD066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 600 V Tc = 25°C 139 A Tc = 80°C 105 A 200 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25°C 151 A Tc = 80°C 111 A A ICRM = 2xICnom VGES SEMiX 13 Trench IGBT Modules |
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SEMiX101GD066HDs SEMIX101GD066 | |
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Contextual Info: SEMiX101GD128Ds Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 104 A Tc = 80°C 74 A 100 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 88 A Tc = 80°C 61 A A ICRM = 2xICnom VGES SEMiX 13 SPT IGBT Modules |
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SEMiX101GD128Ds | |
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Contextual Info: SEMiX101GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 129 A Tc = 80 °C 91 A 75 A ICnom ICRM SEMiX 13 tpsc Trench IGBT Modules ICRM = 2xICnom 150 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C |
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SEMiX101GD126HDs E63532 TypiSEMiX101GD126HDs | |