SEMIX151GAR12E4S Search Results
SEMIX151GAR12E4S Price and Stock
SEMIKRON SEMIX151GAR12E4S (SEMIX SERIES)Igbt Module, Npn, 1.2Kv, 232A; Continuous Collector Current:232A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX151GAR12E4S |
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SEMIX151GAR12E4S (SEMIX SERIES) | Bulk | 8 |
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SEMIKRON SEMIX151GAR12E4SSEMIX; TRENCH IGBT MODULE; 1200V; 200A |
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SEMIKRON SEMIX151GAR12E4S 27890104Module: IGBT; diode/transistor; buck chopper,thermistor; Ic: 150A |
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SEMIX151GAR12E4S 27890104 | 1 |
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SEMIX151GAR12E4S Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SEMiX151GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules SEMiX151GAR12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V |
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SEMiX151GAR12E4s SEMiX151GAR12E4s | |
Contextual Info: SEMiX151GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
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SEMiX151GAR12E4s E63532 | |
Contextual Info: SEMiX151GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C |
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SEMiX151GAR12E4s E63532 | |
Contextual Info: SEMiX151GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules SEMiX151GAR12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V |
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SEMiX151GAR12E4s E63532 | |
Contextual Info: SEMiX151GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX 1s Trench IGBT Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
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SEMiX151GAR12E4s E63532 App151GAR12E4s | |
SEMIX353GB126V1
Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
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SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 |