SEMITRANS* IGBT Search Results

skm 195 gb 125 dn

Abstract: IGBT ultra fast SKM200GB12E4 303GB12E4s SKM300GB123D igbt sixpack skm 50 gb 100 d 151GB12E4s skm200gb123d bridge rectifier 107
Contextual Info: 1997-2012:QuarkCatalogTempNew 9/11/12 8:57 AM Page 1997 25 SEMITRANS and SEMiX High Performance IGBT Modules RoHS SEMiX 603 INTERCONNECT SEMITRANS 3 TEST & MEASUREMENT SEMITRANS™ and SEMiX® 600 V, 1200 V, 1700 V High Performance IGBT Modules SKM 400GAL125D

SKM100GB101D

Abstract: SKM200GB122D SKM40GD121D SKM200GB102D SKM400GA122D SKM400GA102D SKM75GB121D SKM40GD101D 40GD101D SKM150GB122D
Contextual Info: s e m ik r d n SEMITRANS IGBT Modules 1000 to 1700 V Cross Reference List Previous to Actual Types 1 Case width) Sixpacks SEMITRANS 6 (45 mm) DUALS SEMITRANS 2 (34 mm) SK-BOOK ’90 / SUPPL. 91 1989-1991 SKM 15GD100D SK-BOOK ’92/'93 1992-1995 SKM 22GD101D

semibox

Abstract: 32020200 M6x12 31949100 M6X20 32711300 122d 31947300 SEMIKRON book
Contextual Info: SEMITRANS IGBT Modules Packaging, ESO Protection and Mounting Hardware The SEMITRANS IGBT Modules are electrostatic-sensitive devices ESD . They are ESD-protected and packaged in SEMIBOX, i.e. corrugated paper boxes with L x W x H = 190 x 140 x 30 mm resp. 53 mm hight. See SEMIKRON

diode KE

Abstract: semikron MD thyristor kl diode Diode KD 6 17 PONT DIODE thyristor code thyristor push pull SEMISTACK semikron power assemblies SEMIKRON book
Contextual Info: se m ik r o n SEMIKRON Power Semiconductors Contents Section 1 2 3 4 5 6 6 7 8 9 10 11 12 13 Product SEMIPACK Thyristor/Diode Modules Fast SEMIPACtC Diode Modules Thyristors Thyristor Pairs for Water Cooling SEMITRANS® M Power MOSFET Modules SEMITRANS® M IGBT Modules

SKM 75 Gb 124 IGBT

Abstract: SKM 400 gal 124 IGBT SKM 25 GD SKM 40 GD 121 D SKM 40 GD 101 D IGBT cross reference semikron skm 40 gd 121 skm 75 gb 101 d skm 40 gd 121 skm 40 gb 124 d skm 50 gb 100 d
Contextual Info: SEMITRANS IGBT Modules Packaging, ESD Protection and Mounting Hardware * The SEMITRANS IGBT Modules are electrostatic-sensitive devices ESD). They are ESD-protected and packaged in SEMIBOX, i.e. corrugated paper boxes with L x W x H = 190 x 140 x 30 mm resp. 53 mm hight. See SEMIKRON

semikron IGBT

Abstract: SEMISTACK SEMISTACK IGBT B6CI IGBT SEMISTACK SEMIKRON Tunnel diode tunnel diodes IGBT 1500 igbt semikron
Contextual Info: Power Electronics Systems – SEMISTACK SEMISTACK with IGBT: SEMITRANS and SEMITOP® 20 A - 1500 A up to 1 MW Mains voltage Topology VRMS 240 / 400 / 690 B6CI Nominal current Power rating A kW up to 1500 up to 1 MW SEMITOP® Stack for UPS systems SEMITRANS™ IGBT module stack in tunnel configuration up to 250 kW

SKM 600 gb

Abstract: Semitrans skm 75 gb 100 SKM 300 CIRCUIT SKM 200 APPLICATION skm 100 gb 101 d SKM 195 Gb 123 IGBT 838102 SKM 75 GB 123 iran
Contextual Info: 5EMIKR0N innovation + service take your pick there is a p e rfe ct fit fo r your a pp lica tio n rugged easy paralleling short c ircu it p ro of lo w sw itch in g losses 1 2 6 series: SEMITRANS Trench IGBT 1 2 8 series: SEMITRANS SPT IGBT o chips ^ package

SKM200GAR122D

Contextual Info: s e MIKRO n Cases D 27 / D 38 SEMITRANS 2 Cases D 34 / D 54 C = 3; E = 1 Section 6: SEMITRANS® IGBT Modules Type Vces • discontinued during 1995 VcEsat Pwi @ @ 2 5 °C lc Tease -2 5 "C IG B T -2 5 °C V W [ C /W r e p la c e d b y '. . . l 2 3 D " o r " . . . 1 6 3 D '\ s e e p a g e 8

SKM200GB122D

Abstract: skm 191 semikron SKHI 22 AR semikron SKm GAL 123D SEMIKRON SKM 100 GAL 123D semikron SKHI 21 AR SKM300GB123D 062d skm 200 123d transistor SKM200GB101D
Contextual Info: 6. SEMITRANS IGBT Module Insulated Gate Bipolar Transistors Merkmale Typische Anwendungen • MOS-Eingang (spannungsgesteuert) • Motorsteuerung Drehstromantriebsumrichter • N-Kanal • Gleichstrom-Servo- und Roboter-Antriebe • Reihe mit niedriger Sättigungsspannung erhältlich

Wacker Silicones p12

Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits Fischer wlpf 50 semikron SKHI 22 AR skm100gb121d semikron SKHI 21 AR SKM200GB122D skm 100 gb 121d rifa semikron SKHI 21 AR application note
Contextual Info: 6. SEMITRANS IGBT Modules Insulated Gate Bipolar Transistor Modules Features Typical Applications • MOS input (voltage controlled) • Frequency converters for AC motor drives • N channel • DC servo and robot drives • Low saturation voltage series available

din 7985

Abstract: SKM100GB063D SK 200 GAR 125 schaltung Mosfet wacker SKM181A3 if2t SKM151 SKM181
Contextual Info: 5. SEMITRANS M Leistungs-MOSFET Module Besondere Merkmale Typische Anwendungen Leistungs-MOSFET Module • N-Kanal-Anreicherungstyp • Schaltnetzteile • Kurze innere Verbindungen verhindern • Selbstgeführte Wechselrichter • Gleichstrom-Servo- und Roboter-Antriebe

semikron SKm 123D

Abstract: capacitor 10 KVA 400v chopper power supply 201P16 SEMISTACK dc chopper circuit application 3300U SKM 200 APPLICATION
Contextual Info: SEMISTACK - IGBT SEMITRANS Stack1 Three phase bridge rectifier + 3x chopper Circuit Iout2) Vout2) / Vdcmax Types E1CIKF 200 100 / 750 110 KVA Traction Auxiliary Stack Symbol Conditions Iout Ptot fSW fSWmaxCsl per chopper Total output power Application switching frequency

400V igbt dc to dc buck converter

Abstract: semikron SKm 123D semikron SKm 50 GB 123D SEMITEACH single phase inverter IC IGBT 123D Semitrans inverter rectifier B6U 380 single phase inverter IGBT b6u b6ci
Contextual Info: SEMISTACK - IGBT Circuit Irms A Vac / Vdcmax Types B6CI 30 440 / 750 SEMITEACH - IGBT Symbol Conditions Irms SEMITRANS Stack1) Three-phase rectifier + inverter with brake chopper SEMITEACH - IGBT SKM 50 GB 123D SKD 51 P3/250F Features VCES VCE(SAT) VGES

Contextual Info: SKM200GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules SKM200GAL12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V

Contextual Info: SKM400GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 618 A Tc = 80 °C 475 A 400 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 1200 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 440

Contextual Info: SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 223 A Tc = 80 °C 172 A 150 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C

Contextual Info: SKM300GBD12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C

Contextual Info: SKM400GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 618 A Tc = 80 °C 475 A 400 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 1200 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 440

Contextual Info: SKM300GA12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 4 Fast IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C

Contextual Info: SKM600GA12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 913 A Tc = 80 °C 702 A 600 A ICnom ICRM SEMITRANS 4 Fast IGBT4 Modules ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C

SKM300GAL12E4

Abstract: diode 345 C353A IGBT for switched reluctance motor switched reluctance motor IGBT 600 011 DSA001767
Contextual Info: SKM300GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 353 A

SKM600GA12T4

Contextual Info: SKM600GA12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 916 A Tc = 80 °C 704 A 600 A ICnom ICRM SEMITRANS 4 Fast IGBT4 Modules ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C

SKM300GB12T4

Contextual Info: SKM300GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 353

SKM300GB12E4

Abstract: skm300gb12e skm300gb SKM300GB-12E4
Contextual Info: SKM300GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 422 A Tc = 80 °C 324 A 300 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 353 A