SKM200GAL12E4 Search Results
SKM200GAL12E4 Datasheets Context Search
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Contextual Info: SKM200GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules SKM200GAL12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V |
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SKM200GAL12E4 | |
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Contextual Info: SKM200GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 229 A |
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SKM200GAL12E4 | |
diode 331
Abstract: skm200gal12e4 switched reluctance motor IGBT switched reluctance motor
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SKM200GAL12E4 VCEs009 diode 331 skm200gal12e4 switched reluctance motor IGBT switched reluctance motor | |
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Contextual Info: SKM200GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 229 A |
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SKM200GAL12E4 |