SKM150GB12T4G Search Results

SKM150GB12T4G Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SKM150GB12T4G		Semikron	IGBT4 Modules	Original	PDF	490.09KB	5

SKM150GB12T4G Price and Stock

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SEMIKRON


SEMIKRON SKM150GB12T4G Igbt, Half Bridge, 1.2Kv, 223A, Module; Continuous Collector Current:223A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Screw; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Semikron SKM150GB12T4G
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SKM150GB12T4G	Bulk	8		1	1 $216.97 10 $193.10 100 $193.10 1000 $193.10 10000 $193.10	Buy Now
TME	SKM150GB12T4G				1	1 $218.01 10 $174.87 100 $174.87 1000 $174.87 10000 $174.87	Get Quote
Richardson RFPD	SKM150GB12T4G				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	SKM150GB12T4G		44			1 - 10 - 100 - 1000 - 10000 -	Get Quote
SEMIKRON SKM150GB12T4G-WITHOUT-SILICONE-GEL POWER IGBT TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Richardson RFPD	SKM150GB12T4G-WITHOUT-SILICONE-GEL				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
SEMIKRON SKM150GB12T4GW POWER IGBT TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Richardson RFPD	SKM150GB12T4GW				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

SKM150GB12T4G Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 223 A Tc = 80 °C 172 A 150 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	SKM150GB12T4G	PDF
Contextual Info: SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 223 A Tc = 80 °C 172 A 150 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules SKM150GB12T4G VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V	Original	SKM150GB12T4G	PDF
SKM150GB12T4G Abstract: Diode semikron 103 Contextual Info: SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 223 A Tc = 80 °C 172 A 150 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	SKM150GB12T4G App2009 SKM150GB12T4G Diode semikron 103	PDF
453gb12e4s Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c Contextual Info: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1	Original	AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c	PDF