SEMICONDUCTOR RADIATION DETECTOR Search Results

micronote 103

Abstract: 2n2369 avalanche Semiconductor Nuclear Radiation Detector GA102 DIODE ga101 UM9441 radiation ionizing dose TID detector Semiconductor Radiation Detector high sensitive neutron PIN diode pin diode gamma detector
Contextual Info: MicroNote #050 by: Radiation Hardened Performance of Discrete Semiconductor Products Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military programs, but has now evolved to

Contextual Info: X-RAY / ENERGY DIFFERENTIATION TYPE 64 CH GAMMA-RAY CdTe RADIATION LINE SENSOR DETECTOR C10413 Accomplish X-ray and gamma-ray images with multicolor by energy differentiation FEATURES ●High radiation detection efficiency due to direct conversion type semiconductor CdTe detector

smd transistor 304

Abstract: cdfp4-f16
Contextual Info: HS-6254RH Semiconductor Radiation Hardened Ultra High Frequency NPN Transistor Array March 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer,

MFOD1100

Abstract: 905 motorola M68000 MFOE1200 F086600380
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MFOD1100 Fiber Optics — 100 MHz Family Photo D etector Diode Output HERMETIC FAMILY FIBER OPTICS PHOTO DETECTOR DIODE O U TPU T . . . designed fo r infrared radiation detection in high frequency Fiber Optics Systems. It is

Contextual Info: HS-RTX2010RH Semiconductor Radiation Hardened Real Time Express Microcontroller March 1996 Features Applications • Devices QML Qualified in Accordance with MIL-PRF38535 • Space System s Embedded Control • Detailed Electrical and Screening Requirements are

Contextual Info: Development of Radiation Detectors Based on Semi-Insulating Silicon Carbide Frank H. Ruddy, Member, IEEE, John G. Seidel, Robert W. Flammang, Ranbir Singh, Member, IEEE, and John Schroeder Abstract–Fast-neutron detectors based on high-purity semiinsulating 4H silicon carbide SiC semiconductor have been

uv flame sensor

Abstract: thermal conductivity sensor 27713 4h sic ballistic sensor Cree Microwave cree package structure X 1017 sac 326 2771J
Contextual Info: PHYSICAL AND ELECTRONIC PROPERTIES OF SILICON CARBIDE The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices. A summary of the most impor­

SIC01M-18

Contextual Info: SIC01M-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

SIC01S-C18

Contextual Info: SIC01S-C18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

SIC01L-18

Contextual Info: SIC01L-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

SIC01S-18

Contextual Info: SIC01S-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

SIC01XL-5

Contextual Info: SIC01XL-5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

SIC01S-B18

Contextual Info: SIC01S-B18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

MFODC1100

Abstract: Semiconductor Radiation Detector MFOD
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MFODC1100 P h o to D e te c to r C hip Diode Output . . . designed fo r infrared radiation detection in high frequency Fiber Optic Systems. • Fast Response — 1 ns Max • Anode/Cathode Metallization Compatible w ith Conventional W ire and Die Bonding

UM9441

Contextual Info: UM9441 PIN RADIATION DETECTORS KEY FEATURES DESCRIPTION temperature so long as applied voltage exceeds the saturation voltage. This structure also minimizes the effects of permanent damage caused by neutrons and other high energy radiation. Experiments on

IEC747-5

Abstract: photodiode lumen
Contextual Info: Tem ic Semiconductors Symbols and Terminology Symbols alphabetically A Anode, anode terminal A Radiant sensitive area That area which is radiant sensitive for a specified range a Distance between the emitter source and the detector B Base, base terminal

Photo diode TFK S 186 P

Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
Contextual Info: Infrared Emitters and Detectors Data Book 1997 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

UM9441

Abstract: FX-25
Contextual Info: PIN RADIATION DETECTORS Features • • • • • • High Photocurrent Sensitivity High Reliability Construction Fast Rise Time Wide Dynamic Range Hardness to Neutron Bombardment Low Operating Voltage Description Silicon PIN devices are effective detectors

Photo diode TFK S 186 P

Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Contextual Info: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission

motion DETECTOR CIRCUIT DIAGRAM

Abstract: RE200B motion DETECTOR CIRCUIT DIAGRAM for light PIR motion DETECTOR block DIAGRAM Sensor Pir RE200B motion detector light circuit diagram PIR325 motion DETECTOR block DIAGRAM re200b pir sensor RE200B datasheet
Contextual Info: Application Note AN2105 Pyroelectric Infrared Motion Detector, PSoC Style By: David Van Ess, ported/updated by M. Ganesh Raaja Associated Project: New AN2015.zip Software Version: PSoC Designer 4.2 SP3 Associated Part Family: CY8C24x23A, CY8C27x43, CY8C29x66

HSU88

Abstract: DSA003636
Contextual Info: HSU88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-077G Z Rev. 7 Dec. 1999 Features • Low capacitance. (C=0.8pF max) • Low forward voltage. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.

HSM198S

Abstract: DSA003636
Contextual Info: HSM198S Silicon Schottky Barrier Diode for Various Detector ADE-208-090C Z Rev. 3 Oct. 2001 Features • Detection efficiency is very good. • Small temperature coefficient. • HSM198S which is interconnected in series configuration is designed for balanced mixer use.

hitachi rectifier

Abstract: HSM198S SC-59A Hitachi DSA0044
Contextual Info: HSM198S Silicon Schottky Barrier Diode forVarious Detector, High speed switching ADE-208-090B Z Rev. 2 Jun. 1993 Features • • • • Detection efficiency is very good. Small temperature coefficient. HSM198S which is interconnected in series configuration is designed for balanced mixer use.

Hitachi DSA002774

Contextual Info: 1S2076 Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator ADE-208-145A Z Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 8.0ns max) • High reliability with glass seal. Ordering Information