SEMICONDUCTOR 4645 H Search Results

Contextual Info: SENSITRON SEMICONDUCTOR SHD120017 SHD120017P TECHNICAL DATA DATA SHEET 4645, REV. - HERMETIC SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Features: • • • • • • Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop

BD561

Contextual Info: HI5630 Semiconductor March 1999 Data Sheet Triple 8-Bit, 80MSPS A/D Converter with Internal Voltage Reference T he H I5630 is a m onolithic, triple 8-B it, 8 0 M S P S File Number 4645 Features • Triple 8-B it A /D C o nve rte r on a M o n o lith ic Chip

EN4645

Abstract: 2SK1890
Contextual Info: Ordering number:EN4645 N-Channel Silicon MOSFET 2SK1890 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2090A [2SK1890] 10.2 4.5 3 1.2 2.55 0 to 0.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.7 2.55 2 1.35 1 0.8 2.55 Specifications

VCO190-2200AT

Abstract: cdi schematics pcb dc cdi schematic diagram VARI-L VCO PLL 5 ghz VCO690-4790T VCO190-2200 Header, 10-Pin
Contextual Info: LMX2434SLE EVALUATION BOARD OPERATING INSTRUCTIONS National Semiconductor Corporation Wireless Communications, RF Products Group 2900 Semiconductor Dr. M/S E-170 Santa Clara, CA, 95052-8090 LMX2434SLEFPEBI Rev 05.12.06 LMX2434SLE EVALUATION BOARD OPERATING INSTRUCTIONS

Contextual Info: FDP083N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 mΩ Features Description • RDS on = 6.85 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior

F102 equivalent

Contextual Info: FDP083N15A _F102 N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 mΩ Features Description • RDS on = 6.85 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Contextual Info: FDP083N15A_F102 N-Channel PowerTrench MOSFET 150V, 105A, 8.3mW Features Description • RDS on = 6.85mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: FDB082N15A N-Channel PowerTrench MOSFET 150V, 105A, 8.2mW Features Description • RDS on = 6.7mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: FDP083N15A_F102 N-Channel PowerTrench MOSFET 150V, 105A, 8.3mΩ Features Description • RDS on = 6.85mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

FDB082N15A

Abstract: FDB08
Contextual Info: FDB082N15A N-Channel PowerTrench MOSFET 150V, 105A, 8.2mΩ Features Description • RDS on = 6.7mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: FDB082N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.2 mΩ Features Description • RDS on = 6.7 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

FDP083N15A

Contextual Info: FDP083N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 mΩ Features Description • RDS on = 6.85 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior

Contextual Info: FDB082N15A N-Channel PowerTrench MOSFET 150 V, 117 A, 8.2 mΩ Features Description • RDS on = 6.7 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

2217-33

Abstract: 33N capacitor TLV2217-33 TLV2217-33KC TLV2217-33N TLV2217-33PWLE TLV2217-33Y
Contextual Info: TLV2217-33, TLV2217-33Y LOW-DROPOUT 3.3-V FIXED VOLTAGE REGULATORS SLVS067B – MARCH 1992 – REVISED OCTOBER 1995 • • • • • • • • Fixed 3.3-V Output ± 1% Maximum Output Voltage Tolerance at TJ = 25°C 500 - mV Maximum Dropout Voltage at

846C

Abstract: NTLTS3107P NTLTS3107PR2G
Contextual Info: NTLTS3107P Power MOSFET −20 V, −8.3 A, Single P−Channel, Micro8 Leadless Package Features • • • • • Low RDS on for Extended Battery Life Surface Mount Micro8 Leadless for Improved Thermal Performance Low Profile (<1.0 mm) Optimal for Portable Designs

tape 5925f 3M

Abstract: in 4754 3M 0,4 mm 74648 sensor 3414 ZHR-4 HTG3500 HPC106-0 HTG3400 57E-11 52956
Contextual Info: HTG3400 Series Compliant with RoHS regulations RELATIVE HUMIDITY AND TEMPERATURE MODULE Based on the rugged HUMIREL humidity sensor, the HTG3400 series are dedicated humidity and temperature plug and play transducers designed for OEM applications where reliable and accurate measurements are needed. Direct interface

CLL040-1818A1-273M1A2

Contextual Info: DATA SHEET CLL040-1818A1-273M1A2 and are trademarks or registered trademarks of CITIZEN HOLDINGS CO., LTD. JAPAN. is a trademark or a registered trademark of CITIZEN ELECTRONICS CO., LTD. JAPAN. Ref.CE-P1888 02/12 R1 0612 DATA SHEET 1/11 1. Scope of Application

10sx1130g

Abstract: MC10SX1130 MC10SX1130D MC10SX1130DG ma3830
Contextual Info: MC10SX1130 LED Driver Description The MC10SX1130 is high speed LED Driver/current switch specifically targeted for use in FDDI PMD and ANSI X3T9.3 FibreChannel 266 Mbits/s optical transmitters. The integrated circuit contains several unique functional blocks which makes it easily

10SX1130

Abstract: MC10SX1130 MC10SX1130D MC10SX1130DR2
Contextual Info: MC10SX1130 LED Driver The MC10SX1130 is high speed LED Driver/current switch specifically targeted for use in FDDI PMD and ANSI X3T9.3 FibreChannel 266 Mbits/s optical transmitters. The integrated circuit contains several unique functional blocks which makes it easily

Contextual Info: MC10SX1130 LED Driver Description The MC10SX1130 is high speed LED Driver/current switch specifically targeted for use in FDDI PMD and ANSI X3T9.3 FibreChannel 266 Mbits/s optical transmitters. The integrated circuit contains several unique functional blocks which makes it easily

CY7C131

Abstract: CY7C130 CY7C140 CY7C141 IDT7130 IDT7140 C1303 C1307
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 1K x 8 DualĆPort Static RAM D Features D D D D speed/power Functional Description Automatic powerĆdown The CY7C130/CY7C131/CY7C140 and CY7C141 are highĆspeed CMOS 1K by 8 dualĆport static RAMs. Two ports are proĆ vided permitting independent access to

CY7C130

Abstract: CY7C131 CY7C140 CY7C141 IDT7130 IDT7140 C1303 C1307
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 1K x 8 DualĆPort Static RAM D Features D D D D speed/power Functional Description Automatic powerĆdown The CY7C130/CY7C131/CY7C140 and CY7C141 are highĆspeed CMOS 1K by 8 dualĆport static RAMs. Two ports are proĆ vided permitting independent access to

AC Voltage comparator circuit diagram using LM339

Abstract: pin configuration of ic LM339 Using lm339n, AC Voltage comparator circuit diagram LM2904 equivalent 14pin ic 339A MC3302 LM139 LM139F LM239AN LM339 equivalent
Contextual Info: INTEGRATED CIRCUITS LM139/239/239A/339/339A/LM2901/MC 3302 Quad voltage comparator Product specification IC11 Data Handbook Philips Semiconductors 1995 Nov 27 Philips Semiconductors Product specification LM139/239/239A/339/339A /LM2901/MC3302 Quad voltage comparator

CY7C130

Abstract: CY7C131 CY7C140 CY7C141
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 1K x 8 Dual-Port Static RAM Features Functional Description • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 1K x 8 organization • 0.65-micron CMOS for optimum speed/power • High-speed access: 15 ns