SELF VK200 Search Results

equivalent for transistor tt 2206

Abstract: equivalent transistor TT 2206 transistor tt 2206 MRF163 TT 2206 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal output and driver applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 25 Watts

schema electrique micro FM

Abstract: electronique pratique MK090 data book electronique condensateur electrolytique schema MK090 ampli lineaire diviseur de frequence AMPLI LINEAIRE FM ampli schema
Contextual Info: Radio AMPLI LINEAIRE FM 75 à 130 MHz Spécial MICRO-EMETTEUR Etudié pour doper la puissance des petits émetteurs FM expérimentaux, cet amplificateur linéaire délivre grâce à deux étages d'amplification RF, une puissance de 3W environ.

MRF162

Abstract: S21171 triode FU 33 MOTOROLA TRANSISTOR 712
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F162 The RF MOSFET Line RF P o w er Field E ffe c t Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal output and driver applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance

shock vk200

Abstract: marking c7 sot-23 MMBFU310LT1
Contextual Info: MOTOROLA Order this document by MMBFU310LT1/D SEMICONDUCTOR TECHNICAL DATA JFET "Transistor N-Channel 2 SOURCE M MBFU310LT1 Motorola Preferred Device MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Vd S 25 Vdc Gate-Source Voltage vgs 25 Vdc Ig 10 mAdc

J141 mosfet

Abstract: MRF-161 fet j141 mrf161 2191F SELF vk200 k 575
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er Field E ffe c t lY an sisto r N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance

SELF vk200

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER

motorola U310

Abstract: shock vk200 vk200 choke MMBFU310LT1 MVM010W U310 transistor u310 marking C3 sot-23 variable trimmer bar SOT-23
Contextual Info: MOTOROLA Order this document by MMBFU310LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBFU310LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating 1 Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage

136y

Abstract: 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F136 M R F 136Y The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N -Channel E nhancem ent-M ode MOSFETs 15 W, 30 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . designed for wideband large-signal amplifier and oscillator applications up

VK200 rfc

Abstract: MMBFU310LT1 transistor y21 sot-23 vk200 rfc with 6 turns MVM010W U310 shock vk200
Contextual Info: ON Semiconductort JFET Transistor MMBFU310LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current 3 1 THERMAL CHARACTERISTICS Characteristic

motorola U310

Abstract: shock vk200 VK200 rfc MVM010 transistor u310 motorola 539 U310 MVM010W motorola 2443 vk200 rfc with 6 turns
Contextual Info: MOTOROLA Order this document by MMBFJ309LT1/D SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifier Transistor N–Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line R F P o w e r Field-Effect T ra n sisto r N-Channel Enhancement-Mode . . designed for wideband large-signal output and driver stages up to 4 0 0 M H z range. 30 W, to 400 M H z N -C H A N N E L M O S

VK200 rfc

Abstract: MMBFJ309 MMBFJ309LT1 MMBFJ310 MMBFJ310LT1 MVM010W U310 shock vk200 SOT23 TRANSISTOR MARKING c3 JFET with Yos
Contextual Info: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBFJ309LT1 MMBFJ310LT1 N–Channel MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W

2865002402

Abstract: 6435 fet MRF136
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistors MRF136 M RF136Y N -C hannel Enhancem ent-M ode MOSFETs . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push-pull configuration.

transistor KA 7808

Abstract: RF134
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal am plifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance

MRF1550

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband

MRF1550N

Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 MRF1550T1 MRF1550FT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices

EB209

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband

vk200* FERROXCUBE

Abstract: MRF137 3950K MOTOROLA TRANSISTOR 974
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 30 W 2 .0 -4 0 0 MHz N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR N-CHANNEL MOS BROADBAND RF POWER . . . designed fo r w ideband large-signal o utp ut and d river stages in the 2.0 to 400 MHz range

Contextual Info: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband

motorola 5118 uhf

Abstract: motorola 5118 wireless
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices

EB209

Contextual Info: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband

"RF power MOSFETs"

Abstract: AN4005 AN721 MRF1550T1 VK200 A05T AN211A AN215A
Contextual Info: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband

zener z8

Abstract: AN4005 A05T AN211A AN215A AN721 MRF1550T1 VK200 MRF1550
Contextual Info: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband