SE 4.000 MHZ 30PF Search Results

BM1185A

Abstract: TMP87PP23 TMP87PP23F Topr-30
Contextual Info: TOSHIBA TMP87PP23 CMOS 8 b f ' y h V ' f ? n = l > h n - 7 TMP87PP23F PROM * F*Ji£ t fzÜÏÜ, ^ t l 8 tf y h v > y ;l/ f-y 7° ^ >f ROMpp DTMP87CM23A/P23 ¿ tf > u y 7’jl~Ct0 F*JÉS<£>PROMU 7° n 7 9 A * # § jXfr i t l : i ¡9 . TMP87CM23 A /P23 1

DM 0365 R

Abstract: BM11116 BM11122 TMP87P808LM TMP87P808LN TMP87P808M TMP87P808N CSTC4.00MG
Contextual Info: TO SH IB A TMP87P808/808L CMOS 8 b i ' y h V < ^ P = l > h P - 7 TMP87P808M/Nf TMP87P808LM/LN 87P808/808Líá 8K>* PRO M £ F*Ji£ t fz Üftg, Îbf!tÊ8 fcf y I " ^ W 7 ^ 0 n 3 ^ tf a. - * T*, 87P808/808L iá ^ X ^ ROMpap D 87C408/808/408L/808L t \£ > Ñ M (O

87CH46

Abstract: 87PH46N TMP87PH46N 32768kHz TMP87PH47LU TMP87PH47U BM1193 87c846 TMP87
Contextual Info: TOSHIBA TM P87PH46/47/47L CMOS 8 b f ' y h V ' f ? n = l > h n - 7 TMP87PH46N, TMP87PH47Uf TMP87PH47LU 8 7 P H 4 6 / 4 7 / 4 7 L i á 1 2 8 K fcf y n > tf a. - * T* , 87P H 46N 8 7 C 4 4 7 /8 4 7 /H 4 7 /8 4 7 L /H 4 7 L ¿ h 7 > iä ^ * X tf > a A PR O M

GPR25L020B

Abstract: GPR25 MX25L2005 150MIL GPR25L
Contextual Info: GPR25L020B 2M-BIT [x 1] CMOS SERIAL FLASH AUG. 13, 2009 Version 1.3 GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without prior notice. TECHNOLOGY INC. is believed to be accurate and reliable. Information provided by GENERALPLUS

GPR25L

Abstract: GPR25L040B GPR25 MX25L4005A 150MIL gpr25l04 CS 5800 counter control chip
Contextual Info: GPR25L040B 4M-BIT [x 1] CMOS SERIAL FLASH AUG. 14, 2009 Version 1.3 GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without prior notice. TECHNOLOGY INC. is believed to be accurate and reliable. Information provided by GENERALPLUS

I9P5700

Contextual Info: HI-5700 H A R R IS S E M I C O N D U C T O R 8-Bit, 20 MSPS Flash A/D Converter May 1997 Description Features T he HI-5700 is a monolithic, 8-bit, C M O S Flash Analog-toDigital Converter. It is designed for high speed applications where wide bandwidth and low power consumption are

CSTC4.00MG

Abstract: P808L TMP87C408M YJ-7 TMP87C408DM TMP87C408LM TMP87C408LN TMP87C408N TMP87C808LM 00mg
Contextual Info: T O S H IB A TM P87C408/808/408L/808L CMOS 8 b i ' y h V < ^ P = l > h P - 7 TMP87C408M, TMP87C408Nf TMP87C808Mf TMP87C808N TMP87C408LMf TMP87C408LNf TMP87C808LMf TMP87C808LNf TMP87C408DM A ^ i R O M , RAM , A t t i * L - 9 h, 3 > /S' - * * ¿T £ y 9 , v V 7 ;l/

Contextual Info: HI-5701 fSÌ HARRIS S E M I C O N D U C T O R 6 Bit, 30 MSPS Flash A/D Converter July 1992 Features Description • 30 MSPS with No Missing Codes The HI-5701 is a monolithic, 6 bit, CMOS flash Analog-toDigital Converter. It is designed for high speed applications

Contextual Info: MAR I C W a HI-5700 HARRIS SEMICONDUCTOR December 1992 8-Bit, 20 MSPS Flash A/D Converter Features Description • 20MSPS with No Missing Codes The HI-5700 is a monolithic, 8 bit, CMOS Flash Analog-toDigital Converter. It is designed for high speed applications

JENNINGS vacuum capacitors

Abstract: GCS-100-15S CACAN-125-0005 arc furnace cvcj-1000-5 JENNINGS vacuum capacitor CKT-50-0035 CFC-1000-08S CSV5-500 CWV4-2050-0045
Contextual Info: VacuumVARIABLECapacitors 1000pF E N G I N E E R I N G H I G w w w. j e n n i n g s t e c h . c o m | 4 0 8 - 2 9 2 - 4 0 2 5 H T O Y O U R N E E D S CAPACITORS V O A L T A N D G G E A V A S F C I U L L U M E D 1 The leader in high power E N G I N E E R I N G

NAND01G-A

Abstract: NAND128-A NAND256-A NAND512-A VFBGA63 WSOP48 nand TSOP48 SE5055
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array

Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array

GPLB36A3

Abstract: 28 pins calculator lcd display pin configuration SPCP825A spcp825 R32K SEG80 GPLB36
Contextual Info: GPLB36A3 4032 Dots LCD Controller with 512KB ROM SEP. 09, 2009 Version 1.5 GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without prior notice. TECHNOLOGY INC. is believed to be accurate and reliable. Information provided by GENERALPLUS

R8025 real time clock

Abstract: epson sg-8002 Lot Code MARKING epson FC-135 marking CRYSTAL FC-135 32,768kHz MC-306 marking code seiko RX-8564CF SG-8002CA reel FC-135 EPSON SG-310 SCF SG550
Contextual Info: EPSON TH E C R Y S T A U H A S IE R PRODUCT CATALOG November 2003 TQ012-40 THE CRYSTALMASTER ENERGY SAVING EPSON EPSON offers effective savings to its custom ers through a wide range of electronic devices, such as semiconductors, liquid crystal display LCD modules, and crystal devices. These savings

WSOP48

Abstract: NAND01G-A NAND128-A NAND256-A NAND512-A VFBGA63 NAND01GR
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES

Contextual Info: A25LQ64 Series 64M-BIT x1 / x2 / x4 3.3V CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY Document Title 64M-BIT (x1 / x2 / x4) 3 . 3 V CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY Revision History Rev. No. History Issue Date Remark 0.0 Initial issue June 2, 2012

Contextual Info: A25LQ64 Series 64M-BIT x1 / x2 / x4 3.3V CMOS MXSMIO Preliminary (SERIAL MULTI I/O) FLASH MEMORY Document Title 64M-BIT (x1 / x2 / x4) 3 . 3 V CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY Revision History Rev. No. History Issue Date Remark 0.0 Initial issue

Contextual Info: A25LQ64 Series 64M-BIT x1 / x2 / x4 3.3V CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY Document Title 64M-BIT (x1 / x2 / x4) 3 . 3 V CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY Revision History Rev. No. History Issue Date Remark 0.0 Initial issue June 2, 2012

Contextual Info: A25LQ64 Series 64M-BIT x1 / x2 / x4 3.3V CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY Document Title 64M-BIT (x1 / x2 / x4) 3 . 3 V CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY Revision History Rev. No. History Issue Date Remark 0.0 Initial issue June 2, 2012

WSOP48

Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES

NAND FLASH BGA

Abstract: nand flash 128mbit VFBGA63 WSOP48 NAND01G-A NAND128-A NAND128R3A NAND256-A NAND512-A NAND256A
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES

15x1m

Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32Mbit spare area

Contextual Info: M29W400BT M29W400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME 44 – 10µs per Byte/Word typical

FBGA48

Abstract: M29W400BB M29W400BT
Contextual Info: M29W400BT M29W400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME 44 – 10µs per Byte/Word typical