SD3421 Search Results

Contextual Info: SD3421/5421 Silicon PIN Photodiode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 18° nominal acceptance angle option • Fast response time • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to

SD5421

Abstract: SD3421 TO-46 transistor 5421 SD-3421
Contextual Info: 17 September 1997 SD3421/5421 Silicon PIN Photodiode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 18¡ nominal acceptance angle option • Fast response time • Wide operating temperature range (-55¡C to +125¡C)

SD3421-002

Abstract: SD5421-002 SD5421 SD-5421
Contextual Info: SD3421/5421 Silicon PIN Photodiode FEATURES • TO-46 metal can package < Choice of flat window or lensed package • 90° or 18° nominal acceptance angle option • Fast response time • Wide operating temperature range (-55°Cto+125°C) • Mechanically and spectrally matched to

Contextual Info: SD3421/5421 Silicon PIN Photodiode FEATURES . T O -4 6 m etal can p ackage . C h o ic e of flat w indow or lensed p ackage • 9 0 ° or 1 8° nom inal a cc ep tan ce ang le option • Fast respo nse tim e • W id e operating tem p eratu re range (-5 5 °C to + 1 2 5 °C )

SD5421

Abstract: SD3421
Contextual Info: SD3421/5421 Silicon PIN Photodiode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 18¡ nominal acceptance angle option • Fast response time • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to

Contextual Info: SE3455/5455 GaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Ideal for high pulsed current applications

Infrared Emitting Diode

Abstract: SD3443 SD5443 SD5600 SE3470 SE5470
Contextual Info: SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 20¡ nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range

SD-5421-2

Abstract: SD-3421-2 SD-3422-2 sd3421-2 SD-2420-1 34222 SD-1420-2 SD-2420-2 SD-3420-1 SD-3420-2
Contextual Info: W AVELENGTH, nanometers WAVELENGTH, nanometers F IG U R E Z SPECTRAL RESPONSIVITY FIGURE 1. SPECTRAL RESPO NSIVITY PHOTODIODES SILICO N OPTICAL/ELECTRICAL CHARACTERISTICS (25°C) PARAMETER LIG H T CURRENT T E S T C O N D IT IO N r = 20V H as shown SYM BO L

A 69157 scr

Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Contextual Info: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer

diameter glass lens phototransistor

Contextual Info: SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° ' nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents

SE3450

Abstract: SD3443 SD5443 SD5600 SE5450
Contextual Info: SE3450/5450 GaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 20¡ nominal beam angle option • 935 nm wavelength • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to

infrared diode

Abstract: SE3455 SD3443 SD5443 SD5600 SE5455
Contextual Info: 17 September 1997 SE3455/5455 GaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 20¡ nominal beam angle option • 935 nm wavelength • Wide operating temperature range (-55¡C to +125¡C)

SE3450

Abstract: SD3443 SD5443 SD5600 SE5450
Contextual Info: 17 September 1997 SE3450/5450 GaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 20¡ nominal beam angle option • 935 nm wavelength • Wide operating temperature range (-55¡C to +125¡C)

infrared diode

Abstract: Infrared Emitting Diode SD3443 SD5443 SD5600 SE3470 SE5470 5443 equivalent
Contextual Info: 17 September 1997 SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 20¡ nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent

SE3470-002

Abstract: TO-46 SE5470 SD5600 SE3470 5443 equivalent infrared emitting diode
Contextual Info: Datasheet - SE3470-002 SE3470-002 SE Series AlGaAs Infrared Emitting Diode, TO-46 Metal Can Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

TIL149

Abstract: HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W
Contextual Info: ¿£i^±=<.-=is=a. L FASCO INDS/ Part Number SENISYS Replaced By 40E D 3411736 ^ Part Number Replaces ÜQQ1 3 3 Ô By CLI800 . S-870-T55 C L I8 0 0 A . S-875-T55 C L I8 0 0 M . S-870-N55 C L I8 0 0 M A .S-875-N55

SE5470-004

Abstract: SE5470 SD5600 SE3470 TO46
Contextual Info: Datasheet - SE5470-004 SE5470-004 SE Series AlGaAs Infrared Emitting Diode, TO-46 Metal Can Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be

SD5600

Abstract: SE3470 SE3470-003 SE5470 SD3421
Contextual Info: Datasheet - SE3470-003 SE3470-003 SE Series AlGaAs Infrared Emitting Diode, TO-46 Metal Can Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be

SE5455

Abstract: SD5600 SE3455 SE3455-001 SD3421
Contextual Info: Datasheet - SE3455-001 SE3455-001 SE Series GaAs Infrared Emitting Diode, TO-46 Metal Can Package Features ● Representative photograph, actual product appearance may vary. ● ● ● ● ● Due to regional agency approval requirements, some products may not be

SE5455-003

Abstract: SE3455-003 SD5600 SE3455 SE3455-001 SE5455 SE5455-001 INFRA-21 SE5455-004 SE5455-002
Contextual Info: SE3455/5455 GaAs Infrared Emitting Diode INFRA-83.TIF FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C)

SD-5443-3

Abstract: SD5491-4 SD5491-2 transistor 24 SD5491-5 sd5410-3 sd3410-3 SD1420-2L SD-3421-2 SD5443-2
Contextual Info: HO NE Y W E L L Sensors INC/ MICRO 41E D • 45 51 Ô3 0 QG13âbt> □ ■ H0N1 Hermetic Saturation voltages are measured at approximately 25% of the minimum specified light current for each device; typical values are 0.3 V for phototransistors, and 1.0 V

SE5470-1

Abstract: 5443 equivalent SE3470-001
Contextual Info: SE3470/5470 AIGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range

Contextual Info: SE3450/5450 GaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option . 935 nm wavelength . Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to