SD3410 Search Results

SD5410

Abstract: Lu 3410
Contextual Info: SD3410/5410 Silicon Photodarlington FE A TU R ES . TO -46 m etal can package . Choice of flat w indow or lensed package . 90° or 12° nom inal acceptance angle option • W ide operating tem perature range • W ide sensitivity ranges • M echanically and spectrally m atched to

Contextual Info: SD3410/5410 Silicon Photodarlington FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° o r 12° nominal acceptance angle option • Wide operating temperature range (-55°C to+125°C ) • Wide sensitivity ranges • Mechanically and spectrally matched to

H16-1

Abstract: SD3410 SD5410
Contextual Info: SD3410/5410 Silicon Photodarlington FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 12¡ nominal acceptance angle option • Wide operating temperature range (- 55¡C to +125¡C) • Wide sensitivity ranges • Mechanically and spectrally matched to

SD3410

Abstract: SD5410
Contextual Info: 17 September 1997 SD3410/5410 Silicon Photodarlington FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 12¡ nominal acceptance angle option • Wide operating temperature range (-55¡C to +125¡C) • Wide sensitivity ranges

SE345

Abstract: SD3410
Contextual Info: SD3410/5410 Silicon Photodarlington FEATURES • TO-46 melal can package • Choice of flat window or lensed package • 90° or 12° nominal acceptance angle option • Wide operating temperature range (-55°C to +125°C) • Wide sensitivity ranges • Mechanically and spectrally matched to

Contextual Info: SE3455/5455 GaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Ideal for high pulsed current applications

Infrared Emitting Diode

Abstract: SD3443 SD5443 SD5600 SE3470 SE5470
Contextual Info: SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 20¡ nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range

Contextual Info: Interactive Catalog - Honeywell Sensing and Control HOME ABOUT US Speed, Position & Current INDUSTRIES Thermal Pressure, Force & Flow PRODUCTS & APPLICATIONS Relays Switches & Equipment Health NEWS & EVENTS Potentiometers & Resistors CONTACT & SUPPORT Safety

A 69157 scr

Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Contextual Info: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer

diameter glass lens phototransistor

Contextual Info: SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° ' nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents

SE3450

Abstract: SD3443 SD5443 SD5600 SE5450
Contextual Info: SE3450/5450 GaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 20¡ nominal beam angle option • 935 nm wavelength • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to

infrared diode

Abstract: SE3455 SD3443 SD5443 SD5600 SE5455
Contextual Info: 17 September 1997 SE3455/5455 GaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 20¡ nominal beam angle option • 935 nm wavelength • Wide operating temperature range (-55¡C to +125¡C)

SE3450

Abstract: SD3443 SD5443 SD5600 SE5450
Contextual Info: 17 September 1997 SE3450/5450 GaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 20¡ nominal beam angle option • 935 nm wavelength • Wide operating temperature range (-55¡C to +125¡C)

infrared diode

Abstract: Infrared Emitting Diode SD3443 SD5443 SD5600 SE3470 SE5470 5443 equivalent
Contextual Info: 17 September 1997 SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 20¡ nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent

SD-1440-4

Abstract: SPX1878 sdp 8403 SD.3443-3 Sensor spx 6 pin sdp 8403 A sd 1410-4 SD.5443-3 spx 2762
Contextual Info: Phototransistors SILICON Light current Type W at Specified irradiance »[&] Dark current (H-0) io(nA) at Collector Specified breakdown Collector (lc = 100 uA) emitter voltage BVcEo(vOltS) VCE(volts) Emitter breakdown (lc = 100 mA) BVECO(volts) Light current

SE3470-002

Abstract: TO-46 SE5470 SD5600 SE3470 5443 equivalent infrared emitting diode
Contextual Info: Datasheet - SE3470-002 SE3470-002 SE Series AlGaAs Infrared Emitting Diode, TO-46 Metal Can Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

TIL149

Abstract: HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W
Contextual Info: ¿£i^±=<.-=is=a. L FASCO INDS/ Part Number SENISYS Replaced By 40E D 3411736 ^ Part Number Replaces ÜQQ1 3 3 Ô By CLI800 . S-870-T55 C L I8 0 0 A . S-875-T55 C L I8 0 0 M . S-870-N55 C L I8 0 0 M A .S-875-N55

SE5470-004

Abstract: SE5470 SD5600 SE3470 TO46
Contextual Info: Datasheet - SE5470-004 SE5470-004 SE Series AlGaAs Infrared Emitting Diode, TO-46 Metal Can Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be

SD5600

Abstract: SE3470 SE3470-003 SE5470 SD3421
Contextual Info: Datasheet - SE3470-003 SE3470-003 SE Series AlGaAs Infrared Emitting Diode, TO-46 Metal Can Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be

SE5455

Abstract: SD5600 SE3455 SE3455-001 SD3421
Contextual Info: Datasheet - SE3455-001 SE3455-001 SE Series GaAs Infrared Emitting Diode, TO-46 Metal Can Package Features ● Representative photograph, actual product appearance may vary. ● ● ● ● ● Due to regional agency approval requirements, some products may not be

SE5455-003

Abstract: SE3455-003 SD5600 SE3455 SE3455-001 SE5455 SE5455-001 INFRA-21 SE5455-004 SE5455-002
Contextual Info: SE3455/5455 GaAs Infrared Emitting Diode INFRA-83.TIF FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C)

SD-5443-3

Abstract: SD5491-4 SD5491-2 transistor 24 SD5491-5 sd5410-3 sd3410-3 SD1420-2L SD-3421-2 SD5443-2
Contextual Info: HO NE Y W E L L Sensors INC/ MICRO 41E D • 45 51 Ô3 0 QG13âbt> □ ■ H0N1 Hermetic Saturation voltages are measured at approximately 25% of the minimum specified light current for each device; typical values are 0.3 V for phototransistors, and 1.0 V

SE5470-1

Abstract: 5443 equivalent SE3470-001
Contextual Info: SE3470/5470 AIGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range