SD2941 Search Results

SD2941-10

Abstract: EE-19 transformer SD2931-10 VK200
Contextual Info: SD2941-10 RF power transistors HF/VHF/UHF N-channel MOSFETs General features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175W min. with 15dB gain @ 175MHz ■ Low RDS on ■ Thermally enhanced packaging for lower

SD2941-10

Abstract: SD2931-10 VK200 Power Transformer EE-19
Contextual Info: SD2941-10 RF Power Transistors HF/VHF/UHF N - Channel MOSFETs General Features • GOLD METALLIZATION ■ EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 175W MIN. WITH 15dB GAIN @ 175MHz ■ LOW R DS on ■ THERMALLY ENHANCED PACKAGING FOR

SD2941-10

Abstract: VK200 r.f choke SD2941 st marking EE code ST SD2931
Contextual Info: SD2941-10 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175 W min. with 15 dB gain @ 175 MHz ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures

Contextual Info: SD2941-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs PRELIMINARY DATA GENERAL FEATURES • ■ ■ ■ ■ ■ Figure 1. Package GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 175 W MIN. WITH 15 dB GAIN @ 175 MHz LOW RDS ON

Contextual Info: I *-s 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 SD2941-10 RF power transistors HF/VHF/UHF N-channel MOSFETs General features • Gold metallization • Excellent thermal stability • Common source configuration

Contextual Info: SD2941-10 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175 W min. with 15 dB gain @ 175 MHz ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures

Contextual Info: SD2941-10 RF Power Transistors HF/VHF/UHF N - Channel MOSFETs General Features • GOLD METALLIZATION ■ EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 175W MIN. WITH 15dB GAIN @ 175MHz ■ LOW R DS on ■ THERMALLY ENHANCED PACKAGING FOR

Contextual Info: SD2941-10 RF Power Transistors HF/VHF/UHF N - Channel MOSFETs General Features • GOLD METALLIZATION ■ EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 175W MIN. WITH 15dB GAIN @ 175MHz ■ LOW R DS on ■ THERMALLY ENHANCED PACKAGING FOR

F-500V

Abstract: SD2941-10
Contextual Info: SD2941-10 RF Power Transistors HF/VHF/UHF N - Channel MOSFETs General Features • GOLD METALLIZATION ■ EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 175W MIN. WITH 15dB GAIN @ 175MHz ■ LOW R DS on ■ THERMALLY ENHANCED PACKAGING FOR

SD2942

Abstract: PD85035s-e sd2931 fm SD57045 PD55015-E PD85035 PD55015 SD56120M PD85035-E SD2933
Contextual Info: Radio frequency technologies for innovative solutions Selection guide March 2008 www.st.com/rf DMOS ISM & FM broadcast applications Part number SD2900 SD2902 SD2903 SD2904 SD2918 SD2931-10 SD2932 SD2933 SD2941-10 SD2942 SD2943 STAC2932B * SD3931-10 SD3932

blf177

Abstract: 2204B MRF151 VRF152
Contextual Info: VRF152 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

Contextual Info: VRF152E VRF152EMP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152E is a thermally-enhanced version of the VRF152. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without

SD2941-10

Abstract: 2204B VRF152 VRF152E BR 3050 VRF152EMP
Contextual Info: VRF152E VRF152EMP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152E is a thermally-enhanced version of the VRF152. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: VRF152 VRF152MP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

VRF152G

Abstract: VRF152
Contextual Info: VRF152 G VRF152MP(G) 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

SD2942

Abstract: PD85035-E DB-85006L-960 STAC244B SD2941-10 SD57045 DB-85035-860 PowerSO-10RF PD20010-E PD55015-E
Contextual Info: Radio frequency technologies for innovative solutions Selection guide December 2009 www.st.com/rf DMOS ISM & FM broadcast applications Part number Frequency MHz Pout (W) VDD (V) Gain (dB) Efficiency (%) Package SD2900 400 5 28 13.5 45 M113 SD2902 400 15

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

Contextual Info: VRF152 VRF152MP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

SD2941-10

Abstract: 2204B VRF152 VRF152E SD2941
Contextual Info: VRF152E 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152E is a thermally-enhanced version of the VRF152. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without

EPIRB

Abstract: SD2942 SD3933 class AB hf bipolar PD55015 SONAR car alarm SD57045 "class AB Linear" hf PD55035 sd2931 fm
Contextual Info: LDMOS in plastic packages HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications Freq. [MHz] Pout [W] Gain typ [dB] VDD [V] Class Eff. (Typ) [%] Package PD54003 500 3 12 7.5 AB 55 PowerSO-10RF• PD54008

SD2941-10

Contextual Info: VRF152E G VRF152EMP(G) 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152E is a thermally-enhanced version of the VRF152. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without

Contextual Info: VRF152 VRF152MP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

VRF152

Abstract: 2204B BLF177 MRF151 SD2941
Contextual Info: VRF152 VRF152MP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation