SD244 Search Results

double Silicon NPN Phototransistor

Abstract: all datasheet phototransistor Infrared Phototransistor phototransistor 600 nm se2460 SD2440 SE2470 DSA0020271
Contextual Info: 17 September 1997 SD2440 Silicon Phototransistor FEATURES • Miniature, hermetically sealed, pill style, metal can package • 48¡ acceptance angle • Wide operating temperature range -55¡C to +125¡C • Ideal for direct mounting to printed circuit boards

double Silicon NPN Phototransistor

Abstract: phototransistor npn se2460 SD2440 SE2470 sd244
Contextual Info: SD2440 Silicon Phototransistor FEATURES • Miniature, hermetically sealed, pill style, metal can package • 48¡ acceptance angle • Wide operating temperature range - 55¡C to +125¡C • Ideal for direct mounting to printed circuit boards • Wide sensitivity ranges

Contextual Info: SD2440 Silicon Phototransistor FEATU R ES • Miniature, herm etically-sealed, pill style, metal can package • 48° acceptance angle • W ide operating tem perature range -55°C to +125°C • Ideal for direct m ounting to printed circuit boards • W ide sensitivity ranges

Contextual Info: SD2440 Silicon Phototransistor FEATURES • Miniature, hermetically sealed, pill style, metal can package • 48° acceptance angle . Wide operating temperature range -55°C to +125°C • Ideal for direct mounting to printed circuit boards • Wide sensitivity ranges

Contextual Info: SD2440 Silicon Phototransistor FEATURES • Miniature, hermetically-sealed, pill style, metal can package • 48° acceptance angle • Wide operating temperature range -55°C to +125°C • Ideal for direct mounting to printed circuit boards • Wide sensitivity ranges

HOA1160-2

Abstract: HOA1404-2 HOA1404-3 HOA1160-1 HOA1160-3 HOA1160 HOA1180-3 reflective photo sensor HOA1180-1 HOA1180-2
Contextual Info: I HONEYWELL INC/ MICRO 41E D • 4S51630 0013663 0 ■ H0N17=^ ' ^ i T-HI-73 Assemblies Reflective With Hermetic Components Honeywell offers the world’s largest line of reflective assemblies built with hermetic components. HOA1160 uses components from the SE2450IRED, SD2440

SD2440

Contextual Info: SD2440 Silicon Phototransistor FEATURES + Miniature', hermetically sealed, pil style, metal can package ' 48r acceplance an^e » Wide cpara.ting temperature ranga -55 C Id + 125' Cl ' Ideal lor direct rmunling bo pcinled circuit boards ia g » Wideaenartiwty ranges

Reflective Optical Sensor focused

Abstract: HOA1406 HOA1406-001 SE2460 SD2410 SD2440
Contextual Info: HOA1406 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile package • Hermetic style emitter and detector • Focused for maximum response • 24.0 in. 610 mm min. 26 AWG Teflon insulated lead wires INFRA-84.TIF

A 69157 scr

Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Contextual Info: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer

H0A14

Contextual Info: HOA1406 Reflective Sensor tNfRA-84.TIF DESCRIPTION OUTLINE DIMENSIONS in inches mm The HOA1406 series consists of an infrared emitting diode facing an NPN silicon phototransistor (HOA1406-001) or photodarlington (HOA1406-003) encased side-by-side on converging optical axes, in a

H0A14

Abstract: reflective sensor 11LOAD
Contextual Info: H0A1406 Ultra Thin Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile package • Hermetic style emitter and detector • Focused for maximum response • 24 in. 610 mm min. 26 AWG PVC insulated wire leads DESCRIPTION

Contextual Info: This document was generated on 08/13/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Description: 82-24-4408 Active 2.00mm Pitch Round Conductor Flat Cable - 24 AWG 7 x 32 Stranded, Topcoat, 8 Circuits, Reel 30.48m Length

HOA1406-003

Abstract: HOA1406 HOA1406-001 SD2410 SD2440 SE2460 Reflective Optical Sensor IR
Contextual Info: HOA1406-003 HOA Series Reflective Sensor, Darlington Output, Metal Can Packaged Components Actual product appearance may vary. Features Choice of phototransistor or photodarlington output ● Low profile package ● Hermetic style emitter and detector ● Focused for maximum response

Contextual Info: SV2637-001 Preliminary Vertical Cavity Surface Emitting LASER GaAs 850 nm VC SEL FEATURES • Miniature, pill style package • 4° nominal emission angle • Designed for low drive currents (7-15 mA) • High output vs input current performance • Ideal for high resolution applications

Contextual Info: HOA1406 Reflective Sensor tNfRA-84.TIF DESCRIPTION The HOA1406 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1406-001 or photodarlington (HOA1406-003) encased side-by-side on converging optical axes, in a black thermoplastic housing. The detector responds to

HOA1160

Abstract: HOA1160-001 hoa1160-002 HOA1160-003
Contextual Info: HOA1160 Reflective Sensor FEATURES • Choice o f phototransistor o r photodarlington output • Focused for maxim um response • W ide operating tem perature range -55°C to + 1 0 0 °C • Low profile to facilitate stacking I I D ESCRIPTION This com pact reflective sensor consists of an infrared

SD2410

Abstract: SD2420 SD2440 SE2470
Contextual Info: SE2470 AlGaAs Infrared Emitting Diode FEATURES • Miniature, hermetically sealed, pill style, metal can package • 18¡ nominal beam angle • Wide operating temperature range (- 55¡C to +125¡C) • Higher power output than GaAs at equivalent drive currents

se2460

Abstract: SD2410 SD2420 SD2440
Contextual Info: SE2460 GaAs Infrared Emitting Diode FEATURES • Miniature, hermetically sealed, pill style, metal can package • 18¡ nominal beam angle • Wide operating temperature range (- 55¡C to +125¡C) • Ideal for direct mounting to printed circuit boards • 935 nm wavelength

VCSEL phototransistor

Abstract: SV2637-001 1040-11 850 nm LED SD2420 SD2440 VCSEL 850 nm
Contextual Info: 17 September 1997 SV2637-001 Preliminary Vertical Cavity Surface Emitting LASER GaAs 850 nm VCSEL FEATURES • Miniature, pill style package • 4¡ nominal emission angle • Designed for low drive currents (7-15 mA) • High output vs input current performance

Contextual Info: This document was generated on 02/05/2010 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Description: 0082264421 Active 2.00mm .079" Pitch Round Conductor Flat Cable - 26 AWG (7 x 34) Stranded, Topcoat, 21 Circuits, Reel 30.48m (100.0' ) Length

Contextual Info: SE2470 AIGaAs Infrared Emitting Diode FEATURES • Miniature, hermetically sealed, pill style, metal can package • 18° nominal beam angle • Wide operating temperature range (-55°C to +125°C) • Higher power output than GaAs at equivalent drive currents

Contextual Info: SV2637-001 Preliminary Vertical Cavity Surface Emitting LASER GaAs 850 nm VCSEL FEATURES • Miniature, pill style package • 4° nominal emission angle • Designed for low drive currents (7-15 mA) . High output vs Input current performance » Ideal for high resolution applications

p8525

Abstract: diode S428 P8526
Contextual Info: Contents Page Page O P TO SCH M ITT D E T E C T O R S INTRODUCTION SD5600/5610. 146 SD5620/5630. 150 SDP8004/8014 . 154

SE2470-001

Contextual Info: SE2470 AIGaAs Infrared Emitting Diode FEATURES • Miniature, hermetically-sealed, pill style, metal can package • 18° nominal beam angle • Wide operating temperature range (-55°C to +125°C) • Higher output power than GaAs at equivalent drive currents