SD-46 DIODE Search Results

Single chip metal detector

Abstract: sd5600-001 SD5600 resistor metal detector SD 5455
Contextual Info: Datasheet - SD5600-001 SD5600-001 SD Series Optoschmitt Detector, TO-46 Metal Can Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be available in your area.

Single chip metal detector

Abstract: SD 5455 ic for metal detector resistor metal detector
Contextual Info: Datasheet - SD5620-001 SD5620-001 SD Series Optoschmitt Detector, TO-46 Metal Can Package Representative photograph, actual product appearance may vary. Features ● ● ● ● Due to regional agency approval requirements, some products may not be available in your area.

IS44

Contextual Info: PRODUCT INFORMATION 13Ô0rtm 1550»,* 8C443 Datacom, Telecom RN/Preamp This device consists of a PIN photo­ diode and a transimpedance amplifier assembled in a TO-46 package. It is design ed for FD D I, ATM and SD H /Sonet up to 155 Mbps. The AGC A utom atic Gain Control

SD 5455

Abstract: SE3455-004 SE3455-003 SE5455-004 SE5455
Contextual Info: SE3455/5455 GaAs Infrared Emitting Diode FEA TU R ES • TO -46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Ideal for high pulsed current applications

47n60cfd

Abstract: SPW47N60CFD S47A 47N60C Q67045A5051 JESD22 47N60
Contextual Info: SPW47N60CFD CoolMOS TM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.083 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 46 A • Extremely low reverse recovery charge • Ultra low gate charge

Contextual Info: SCHOTTKY DIODE ARRAY IS S U E 2 - J A N U A R Y 1998 DEVICE DESCRIPTION FEATURES The SD A 12 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • Reduced reflection noise • Repetitive peak forward current

irf 3170

Abstract: sd150 150N DO-205AC 0K140
Contextual Info: Bulletin I2077 rev. B 11/01 SD150N/R SERIES Stud Version STANDARD RECOVERY DIODES Features Wide current range High voltage ratings up to 2500V High surge current capabilities 150A Stud cathode and stud anode version Standard JEDEC types Typical Applications

fairchild 1011 opto

Abstract: cj 6PIN H11L1SR2M H11L1M
Contextual Info: 6-PIN DIP OPTOISOLATORS LOGIC OUTPUT H11L1M H11L2M H11L3M DESCRIPTION The H11LX series has a high speed integrated circuit detector optically coupled to a gallium-arsenide infrared emitting diode. The output incorporates a Schmitt trigger, which provides hysteresis for noise immunity and

DO-200AA

Abstract: S15C S20C SD30 SD303C
Contextual Info: Bulletin I2066 rev. C 04/00 SD303C.C SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST recovery diode series 350A 1.0 to 2.0 µs recovery time High voltage ratings up to 2500V High current capability Optimized turn on and turn off characteristics

Contextual Info: Bulletin I2066 rev. C 04/00 SD303C.C SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST recovery diode series 350A 1.0 to 2.0 µs recovery time High voltage ratings up to 2500V High current capability Optimized turn on and turn off characteristics

AN18180A

Abstract: IF FM detector agc pin17 out multiplex in car vcc4 oscillator fm-if ic
Contextual Info: Fewer components for reduced equipment size. FM Multiplex Reception IC AN18180A „ Overview The AN18180A IC for FM multiplex reception incorporates FM+FE/IF detection and phase-locked loop PLL circuits which were conventionally configured with two chips but are now a onechip configuration for downsizing equipment design.

DO-200AA

Abstract: S15C S20C SD30 SD303C
Contextual Info: SD303C.C Series Vishay High Power Products Fast Recovery Diodes Hockey PUK Version , 350 A FEATURES • High power FAST recovery diode series • 1.0 to 2.0 µs recovery time RoHS COMPLIANT • High voltage ratings up to 2500 V • High current capability

S20C

Abstract: SD303C DO-200AA S15C SD30
Contextual Info: Bulletin I2066 rev. C 04/00 SD303C.C SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST recovery diode series 350A 1.0 to 2.0 µs recovery time High voltage ratings up to 2500V High current capability Optimized turn on and turn off characteristics

msop-16

Abstract: GE 923 sd 393 SY88289AL SY88313BL SY88315BL SY88343BL SY88345BL SY88347DL SY88353BL
Contextual Info: Telecom DWDM : MAN/APON/BPON/GPON/SONET: ♦ SONET data rate up to 2.7Gbps ♦ Multi-rate: extends to lower rates (OC-3) ♦ APD and high-gain TIA-based ROSA ♦ Wide dynamic input range: ≥10mVPP ♦ Multi-rate: extends to lower rates (OC-3)/Fast Ethernet)

Contextual Info: VS-SD303C.C Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes Hockey PUK Version , 350 A FEATURES • • • • • • • • • • • DO-200AA PRODUCT SUMMARY High power FAST recovery diode series 1.0 s to 2.0 μs recovery time High voltage ratings up to 2500 V

Contextual Info: PHOTOFET OPTOCOUPLERS OPTOELECTRONICS H11F1 H11F2 H11F3 The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET

Contextual Info: SD303C.C Series Vishay High Power Products Fast Recovery Diodes Hockey PUK Version , 350 A FEATURES • High power FAST recovery diode series • 1.0 to 2.0 µs recovery time RoHS COMPLIANT • High voltage ratings up to 2500 V • High current capability

703C

Abstract: S20L S30L SD703 SD703C LT 4320
Contextual Info: Bulletin I2075 rev. D 04/00 SD703C.L SERIES FAST RECOVERY DIODES Hockey Puk Version Features 700A 790A High power FAST recovery diode series 2.0 to 3.0 µs recovery time High voltage ratings up to 2500V High current capability Optimized turn on and turn off characteristics

Contextual Info: FDD850N10LD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 15.3 A, 75 mΩ Features Description • RDS(on) = 61 mΩ (Typ.) @ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior

Contextual Info: Tn^y^j:9-if Dual In-line Package Bridge Diode • Avalanche type O U T L IN E D IM E N S IO N S S1WB A DZ 800V 1A ■ R A T IN G S Absolute Maximum Ratings m sd^ s Item Symbol Operating Junction Temperature -it Maximum Reverse Voltage - i A S t - v nmSiiii

mosfet 30V 18A TO 252

Abstract: 2SJ601 smd 18A equivalent smd mosfet IC 46M S-108
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SJ601 TO-252 +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3.80 MAX. VGS = -4.0 V, ID =-18 A Low Ciss: Ciss = 3300 pF TYP. +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)2 = 46m

Contextual Info: Galliumarsenidphosphid-Lumineszenzdioden GaAsP Red Light Emitting Diodes Anwendung: Application: Rotleuchtende Diode für allgemeine Anzeigezwecke Red light em itting diode for general indicating purposes Besondere Merkmale: Features: • Kunststoffgehäuse

KBR-912F108

Contextual Info: Ordering number : EN6038A LA1781M Monolithic Linear IC Single-Chip Tuner IC for Car Radios http://onsemi.com Overview The LA1781M integrates all six blocks required in a car radio tuner on a single chip. Features • Improved noise reduction methods The FM front end provides excellent 3-signal characteristics equivalent to those of the LA1193M.

t-flash micro SD Card connector

Abstract: slp-40
Contextual Info: EClamp2410P ESD Protection Device for T-Flash/MicroSD Interfaces PRELIMINARY PROTECTION PRODUCTS - EMIClampTM Description Features The EClampTM2410P is a combination EMI filter and line termination device with integrated TVS diodes for use on Multimedia Card interfaces. This state-of-the-art device utilizes solid-state silicon-avalanche technology for