SCR RECTIFIER Search Results

SCR Inverter

Abstract: SCHEMATIC POWER SUPPLY WITH scr SCR PNPN
Contextual Info: GENERAL INFORMATION 1 Latch-up LATCH-UP CIRCUIT Latch-up is caused by an SCR Silicon Controlled Rectifier circuit. Fabrication of CMOS integrated circuits with bulk silicon processing creates a parasitic SCR structure. The behavior of this SCR is similar in principle to a true SCR. These structures result from the multiple diffusions needed for

NTE5402

Abstract: NTE5401 NTE5405 NTE5404 NTE5406 NTE5400 NTE5403
Contextual Info: NTE5400 thru NTE5406 Silicon Controlled Rectifier SCR 0.8 Amp Sensitive Gate Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with

Contextual Info: International B Rectifier SERIES IRK.F82 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability E lectrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package

irkt 132

Abstract: IRKT THYRISTOR THYRISTOR MODULE irkt 132 12 irkt 40 D267 DIODE
Contextual Info: International H Rectifier SERIES IRK.F72 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package

SCR 1000A

Abstract: T820167504DH T820 Phase control SCR
Contextual Info: T820 750A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Phase Control SCR 750 Amperes Average 2400 Volts T820 750A Phase Control SCR 750 Amperes Average, 2400 Volts Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for

I27092

Abstract: F13202
Contextual Info: International S Rectifier SERIES IRK.F132 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability E lectrically isolated baseplate 3000 VRMS isolating voltage Industrial standard package

Contextual Info: T820 900A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Phase Control SCR 900 Amperes Average 1800 Volts T820 900A Phase Control SCR 900 Amperes Average, 1800 Volts Description: Powerex Silicon Controlled Rectifiers (SCR) are designed for

irkt 132 12

Contextual Info: • International SRectffier 4B55452 741 « I N R INTERNATIONAL RECTIFIER bSE D SERIES IRK.F72 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate

tg1g

Abstract: high power thyristor scr 3f scr thyristor irkv 300
Contextual Info: Bulletin 127102 rev. A 10/97 International IQ R Rectifier SCR / SCR and SCR / DIODE Features • High voltage ■ E lectrically isolated base plate ■ 3000 VRMS isolating voltage ■ Industrial standard package ■ S im plified m echanical designs, rapid assem bly

Contextual Info: • International S Rectifier 4Ö554S2 001b?b3 TbO ■ INR INTERNATIONAL RECTIFIER bSE » SERIES IRK.F112 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate

Contextual Info: • International g«R]Rectifier MflSSMSS DDlbô3D MTS ■ INR INTERNATIONAL RECTIFIER bSE D SERIES IRK.F200 FAST SCR I DIODE and SCR / SCR MAGN-A-pak Power Modules Features ■ ■ ■ ■ Fast turn-off thyristor Fast recovery diode High surge capability

VD357

Abstract: 18psk NF200 Diode LT 410
Contextual Info: International H Rectifier SERIES IRK.F200 FAST SCR I DIODE and SCR / SCR MAGN-A-pak Power Modules Features • ■ I ■ ■ Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3 0 0 0 V rms isolating voltage

B25DC

Abstract: ir e.78996 B25DS E.78996 scr 78996 diode
Contextual Info: International HÖR]Rectifier , • 4A55452 0ülbSb3 IT T « I N R INTERNATIONAL RECTIFIER bSE B25DC/DA/DS/CS/JS SCR I SCR and DIODE / SCR Power Modules in B- package Features I Glass passivated junctions fo r greater reliability I E lectrically isolated base plate 3500V RMS

6AI diode

Contextual Info: International IS Rectifier 4Ö5545E Oülb?^ 32fl H I N R SERIES IRK.F152 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features • ■ ■ ■ ■ ■ Fast turn-off thyristor Fast recovery diode High surge capability E lectrically isolated baseplate

IRKH162-14D20

Abstract: IRKH135-16D25
Contextual Info: I 4Ô55452 0Glb7S5 157 M I N R SERIES IRK.135, .136, .141, .142, .161, .162 International S Rectifier SCR I SCR and SCR / DIODE Features NEW INT-A-pak Power Modules INTERNATIONAL RECTIFIER • High voltage ■ Electrically isolated base plate ■ 3000 V RMS isolating voltage

diode lt 436

Abstract: IRKT THYRISTOR THYRISTOR MODULE THYRISTOR 30A 300V L1385 irkt 350
Contextual Info: International I S Rectifier s e r ie s i r k .f h 2 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features • ■ ■ ■ ■ Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage

irkv 300

Abstract: IRKT
Contextual Info: Bulletin I27204 09/05 IRK.PbF SERIES SCR / SCR and SCR / DIODE MAGN-A-pak  Power Modules Features High voltage Electrically isolated base plate 3000 V RMS isolating voltage Industrial standard package 170A 250A Simplified mechanical designs, rapid assembly

Contextual Info: Bulletin I27102 rev. C 05/02 IRK. SERIES MAGN-A-pak  Power Modules SCR / SCR and SCR / DIODE Features High voltage Electrically isolated base plate 170A 230A 250A 3000 V RMS isolating voltage Industrial standard package Simplified mechanical designs, rapid assembly

Contextual Info: H U TSO N IN D U STR IES SCR The Hutson line of SCR’s is designed to be driven directly with 1C and MOS devices. These SCR’s feature proprietary, void-free glass passivated chips. These SCR’s are available in voltage ratings from 50 to 600 Volts V d r m & V r r m . For higher

scr C35

Abstract: 2N683 2N690 2N681-2N692 2N688 2n692 2N681 2N682 FREEPORT 2N684
Contextual Info: Semitronics Discrete Semiconductors C35 Series: 2N681-2N692 Description Phase Control SCR 16 Amperes / 25-800 Volts Silicon Controlled Rectifiers SCR are reverse blocking triode thyristor semiconductor devices designed for power switching and phase control

triode rn 1016

Abstract: 2N1778A thyristor st 103
Contextual Info: Discrete Semiconductors C10 Series: 2N1770A-2N2619A Semitronics Phase Control SCR 4.7 Amps 125-600 Volts Description Silicon Controlled Rectifiers SCR are reverse blocking triode thyristor semiconductor devices designed for power switching and phase control

D304 diode

Abstract: tr/P45/D304 diode
Contextual Info: • International ^R ectifier MÖSSM52 QQlb771 037 ■ INR INTERNATIONAL RECTIFIER b5E D SERIES IRK.F132 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features F ast tu rn -o ff th y ris to r F a s t re c o v e ry d io d e High su rg e c a p a b ility

tt 3043

Abstract: RS401 SCRN234R SCRN235R SCRN236R SCRN237R SCRN238R SCRN262R SCRN263R SCRN264R
Contextual Info: Type SCR Commutating Capacitors Type SCRN Film-Paper/Extended Foil Commutating Capacitors Type SCRN capacitors are for SCR silicon controlled rectifier commutating applications that require high peak and rms current capability. These capacitors are ideal for other

irkv 300

Abstract: d337 diode current source inverter D345 irkt 350 IRKH 180 base triggering circuit of 3 phase inverters
Contextual Info: S IE 4Ô5SMS2 D 0Ü13373 International S Rectifier I INR SERIES IRK.170, .230, .250 SCR / SCR and SCR / DIODE INTERNATIONAL 504 NEW MAGN-A-pak Power Modules R EC TIFIER Features • ■ ■ ■ ■ ■ ■ ■ ■ High v o lta g e . E le c tric a lly is o la te d ba se p la te