SCHOTTKY PHOTODIODE Search Results

NTE7232

Abstract: NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A
Contextual Info: NTE SEMICONDUCTORS ADDED SINCE MAY 2013 NTE PART NO. DESCRIPTION Datasheet Link NTE573-1 RECTIFIERS Schottky Barrier Rectifier, 100V, 5 Amp, DO‐201AD Case NTE573‐2 Schottky Barrier Rectifier, 200V, 5 Amp, DO‐201AD Case

LT 543 common cathode

Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current

CMG03

Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A

Contextual Info: GaAsP photodiode G1747 Schottky type with extended red sensitivity Features Applications Low dark current Analytical instruments Extended red sensitivity Color identification High UV sensitivity UV detection Structure / Absolute maximum ratings Parameter Package

smd diode Lz zener

Abstract: CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2011/9 SCE0004L Rectifiers General-Purpose Rectifiers Average Forward Current A

G1962

Abstract: uv photodiode, GaP GaP photodiode
Contextual Info: GaP photodiode G1961 G1962 G1963 Schottky type Features Applications Low dark current Analytical instruments High UV sensitivity UV detection Structure / Absolute maximum ratings Type no. Dimensional outline/ Window material /Q* /Q /Q G1961 G1962 G1963 Package

UV source led 254 nm peak

Abstract: G1126-02
Contextual Info: GaAsP photodiode G1126-02 G1127-02 G2119 Schottky type for UV to visible range Features Applications Low dark current Analytical instruments High UV sensitivity Color identification UV detection Structure / Absolute maximum ratings Type no. Dimensional outline/

Contextual Info: GaP photodiode G1961 G1962 G1963 Schottky type Features Applications Low dark current Analytical instruments High UV sensitivity UV detection Structure / Absolute maximum ratings Type no. G1961 G1962 G1963 Dimensional outline/ Window material /Q* /Q /Q Package

Contextual Info: GaAsP photodiode G1126-02 G1127-02 G2119 Schottky type for UV to visible range Features Applications Low dark current Analytical instruments High UV sensitivity Color identification UV detection Structure / Absolute maximum ratings Type no. Dimensional outline/

GaP photodiode

Abstract: G1962 uv photodiode, GaP G1961 G1963 ACTIVE LOAD PHOTODIODE
Contextual Info: PHOTODIODE GaP photodiode G1961, G1962, G1963 Schottky type Features Applications l Low dark current l High UV sensitivity l Analytical instruments l UV detection • General ratings / Absolute maximum ratings Type No. G1961 G1962 G1963 Dimensional outline/

GaP photodiode

Abstract: uv photodiode, GaP G1962 G1961 G1963
Contextual Info: PHOTODIODE GaP photodiode G1961, G1962, G1963 Schottky type Features Applications l Low dark current l High UV sensitivity l Analytical instruments l UV detection • General ratings / Absolute maximum ratings Type No. G1961 G1962 G1963 Dimensional outline/

ultraviolet sensor

Abstract: ultraviolet sensor datasheet 5209 3.3 TW30SY 5209
Contextual Info: Ultraviolet selective thin film sensor TW30SY Features • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Large photoactive area No focusing lens needed, therefore large usable incident angle

TW30SY

Abstract: TR15 TW30 ultraviolet sensor
Contextual Info: Ultraviolet selective thin film sensor TW30SY Features • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Large photoactive area No focusing lens needed, therefore large usable incident angle

OPA128

Abstract: SLOA011 TW30SY s 5301
Contextual Info: Ultraviolet selective thin film sensor “TW30SY” NEW: Read important application notes on page 4 ff. Features • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Large photoactive area

tw30sx

Abstract: ultraviolet sensor ultraviolet sensor datasheet
Contextual Info: Ultraviolet selective thin film sensor TW30SX Features • • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Large photoactive area No focusing lens needed, therefore large usable incident angle

ultraviolet sensor

Abstract: UV30DZ
Contextual Info: Ultraviolet selective thin film sensor UV30DZ Features • • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Built-in filter glass for low sensitivity above 400nm Large photoactive area

Contextual Info: Ultraviolet selective thin film sensor TW30DY Features • • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Built-in filter glass for low sensitivity above 400nm Large photoactive area

GUVB-S11SD

Contextual Info: GUVB-S11SD TECHNICAL DATA UV-B Sensor Features • • • • • Applications • • Aluminium Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current UV Index Monitoring

ultraviolet sensor datasheet

Abstract: ultraviolet sensor nm-400 ultraviolet sensors TW30DY2
Contextual Info: Ultraviolet selective thin film sensor TW30DY2 Features • • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Built-in filter glass for low sensitivity above 400nm Large photoactive area

ultraviolet sensor

Abstract: ultraviolet sensor datasheet 5209 3.3 ultraviolet sensors TW30DZ
Contextual Info: Ultraviolet selective thin film sensor TW30DZ Features • • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Built-in filter glass for low sensitivity above 400nm Large photoactive area

GUVA-T11GD

Contextual Info: GUVA-T11GD TECHNICAL DATA UV-A Sensor Features • • • • • Applications Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current • • • Full UV Band Monitoring

Contextual Info: Ultraviolet selective thin film sensor UVD 39 Features •= •= •= •= •= •= •= Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Large photoactive area No focusing lens needed, therefore large usable incident angle

Contextual Info: GUVA-S22ED TECHNICAL DATA UV-B Sensor Features • • • • • Applications • Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current UV Index Monitoring Absolute Maximum Ratings

GUVC-T10GD

Contextual Info: GUVC-T10GD TECHNICAL DATA UV-A Sensor Features • • • • Applications • • Aluminium Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness Pure UV-C Monitoring Sterilization Lamp Monitoring Absolute Maximum Ratings