SCHOTTKY DIODE MARKING UX Search Results

HVR-1X 7 diode

Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
Contextual Info: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

Contextual Info: Schottky Barrier Diode Diode Module mtm D180SC6M OUTLINE 60 V 180A Feature • High lo Rating -Module-PKG • Low V f • Small 9 je • f i Vf • 8 jc jÿ 'J '£ U Main Use • • • • • X M Z 'f y f - y iM M • DC/DC ziyj{-3 • IC x T .? High Power Switching Regulator

smd diode marking 111

Abstract: J532 smd diode marking BM J532-1 JJ SMD diode smd diode marking JJ MARKING FY DF15NC15 SHINDENGEN DIODE ET 15 Smd diode
Contextual Info: Schottky Barrier Diode Twin Diode mnm DF1 5 N C 15 o u tlin e 150 V 15A Feature • SM D • SMD • <SlR=0.3m A • Low lR=0.3mA • U I C < 0 • Resistance for thermal run-away Main Use • DC/DC ny K-9 • OA • ilffl • • • • Switching Regulator

smd marking VB

Abstract: smd marking VB DIODE smd diode marking BM MARKING FY DF10NC15 smd marking bm SHINDENGEN DIODE
Contextual Info: Schottky Barrier Diode Twin Diode mnm o u t lin e DF1 0 N C 15 15 0 V 1 0 A Feature • SM D • SMD • <SlR=0.2mA • Low lR=0.2mA • L> C<. L' • Resistance for thermal run-away Main Use • D C /D C ny K-9 • OA • ilf f l • • • • Switching Regulator

smd regulator marking

Abstract: DF30NC15 MARKING FY smd diode marking BM smd marking fy SHINDENGEN DIODE
Contextual Info: Schottky Barrier Diode Twin Diode mnm DF30NC15 o u t lin e 150V 30A Fea tu re • SM D • SMD • Low lR=0.5mA • f ilR = 0 . 5 m A • Resistance for thermal run-away M ain U s e • Switching Regulator • DC/DC Converter • D C /D C n y K - 9 • OA

Contextual Info: Schottky Barrier Diode Twin Diode mwm o u t lin e DF15J C 10 100 V 15A Feature • SMD ' SM D 1Low lR=0.6mA • f ilR = 0 .6 m A • i» # îê « b c u 1 Resistance for thermal run-away : <U • /Jv3ü*3iES* 1 High lo R ating-Sm all-PK G Main Use • ^ -S P C -L C D ^ -^ ^

SMD diode JB

Abstract: marking JB SCHOTTKY BARRIER DIODE marking JB diode smd diode marking c3 smd diode marking lj DF20SC4M DF20S SHINDENGEN DIODE diode smd mk diode marking jb
Contextual Info: Schottky Barrier Diode Twin Diode mnm DF20SC4M o u t lin e 40V 20A Feature • SM D • SMD • PR RSM • P r r s m Rating • / jv s fc fc œ s s » • High lo Rating-Small-RKG • D C /D C • m m . y - h . O A m ss • • • • Main Use •iBiS.iK—

STO-220 Shindengen

Abstract: DF30JC6 SHINDENGEN DIODE diode smd 5t
Contextual Info: Schottky Barrier Diode Twin Diode mnm DF30JC6 o u t lin e 60V 30A Feature • SM D • SMD • filR = 0 .7 m A • Low lR=0.7mA • Resistance for thermal run-away • jw is æ ç ë c u ic < L ' • High lo Rating -Small-PKG Main Use • snata 2%ffi8æ • Secondary rectification for Adapter of

marking JC diode

Abstract: SG20JC6M diode ir01
Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG20JC6M 60V 20A Feature • T j= i5 r c • Tj=150°C • T7JIÆ-JI/ K • Full M olded • lR = 0 .1 m A • Low lR=0.1mA • Resistance for thermal run-away •« » W Œ 2 k V S S I • Dielectric Strength 2kV

Contextual Info: Schottky Barrier Diode Twin Diode W tm SF5SC3L U nit-m m W eight 1.9g Typ Package : FTO-220 30V 5A Feature Date code 4.5 ' \0 Control No. • Tj=150°C • Tj=150°C • fiV F = 0 .4 5 V • Low V f=0.45V Type No. • P r r s m Rating Wtl: • Full Molded

diode smd JS 8

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE5SC4M Unit-mm Weight 0.326g Typ 40V 5A Feature >SMD 1Tj=150°C 1 P r r s m Rating 1 High lo Rating -Small-PKG • SMD • Tj=150°C • P r r s m T ’A ' ^ V S ' i f S l i E Main Use » D C /D C o

s30sc4m

Contextual Info: Twin Diode Schottky Barrier Diode W t m OUTLINE Package : MTO-3P S30SC4M Unit-mm Weight 6.1g Typ 40V 30A «< Feature • Tj=150°C • P r r s m Rating • Small jc • High lo Rating • Tj=150°C 9 • * i « S i Main Use • DC/DC ZiyiK—S • M M . f —lx . O A d f f i

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE5SC6M Unit-mm Weight 0.326g Typ 60V 5A Feature >SM D •SM D • Tj=150°C •P rrsm 1Tj=150°C 1 P r r s m Rating 1 High lo Rating -Sm all-PKG T ’A ' ^ V S ' i f S l i E Main Use 1Sw itching Regulator

d10sc4m

Contextual Info: Schottky Barrier Diode Twin Diode Wtm D10SC4M OUTLINE 40 V 10A Feature • Tj=150°C • Tj=150°C • PRRSM T ’A ' ^ V Ì ' I ' K i E • P r r s m Rating • 7 [ Æ - J U K • Full Molded Main Use • Switching Regulator • D C /D C □ V A ' - S '

smd diode marking 3fs

Abstract: smd DIODE 3FS smd diode schottky code marking UX smd diode marking LM smd diode schottky code marking 2F Schottky Diode Marking UX diode Marking Code lm MARKING 3FS
Contextual Info: Schottky Barrier Diode Single Diode mtm OUTLINE Package : 2F D3FS6 o i Unit^mm Weight 0.16g Typ 7 -F v -? Cathode m ark 60V 3A ®i Feature • /J v P S M D • S m all SM D • Tj=150°C • Tj=150°C » P R R S M T’A ' ^ V ï / i f i l Œ » P r r s m Rating

Contextual Info: Schottky Barrier Diode Single Diode Wtm D5S4M OUTLINE 40V 5A Feature • Tj=150°C • P rrsm Rating • Full Molded • Tj=150°C • 71 [Æ -JUK Main Use • • • • • D C /D C □ V A '— ^ •mm, i f - A.oAdgg Switching Regulator DC/DC Converter

FMPG2F

Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
Contextual Info: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in

Diode schottky eb

Contextual Info: Schottky Barrier Diode Twin Diode Wtm D10SC9M OUTLINE 90 V 10A Feature • Tj=150°C • P rrs m T ’A ' ^ V ì ' I ' K ì E • Tj=150°C • P rrsm Rating • Full Molded Main Use • • • • • D C /D C Z \y jK - S • mm. < f - A . o A d i g Switching Regulator

HVR-1X 7 diode

Abstract: hvr 1X 3 diode HVR-1X 7 FMPG2F HVR-1X diode HVR-1X 6 diode HVR-1X -7 HVR-1X 6 fmp2fu RBA-404B
Contextual Info: CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in

Schottky Diode Marking UX

Abstract: KDR731
Contextual Info: SEMICONDUCTOR KDR731 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SERIES CONNECTION HIGH SPEED RECTIFICATION (SWITCHING REGULATORS, CONVERTERS, CHOPPERS) UNIVERSAL-USE RECTIFIERS. E B M M DIM A B C MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + ・Low switching noise.

Contextual Info: Schottky Barrier Diode Twin Diode W tm SF10SC4 OUTLINE A Feature 40V • Tj=150°C • Tj=150°C • P R R S M T ’A ' i ^ V Î ' I ' K i E • P • 71 [ Æ - J U K • Full Molded • Dielectric Strength 2kV • I Ê S I f f i2 k V « | I rrsm Rating

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

Contextual Info: TO SHIBA TC7WH157FU/FK TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7WH157FU, TC7WH157FK 2-CHANNEL MULTIPLEXER The TC7WH157 is an advanced high speed CMOS 2CHANNEL MULTIPLEXER fabricated with silicon gate CMOS technology. It achieves the high speed operation

2SK43 transistor

Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Contextual Info: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written