SCHEMATIC POWER SUPPLY TRANSISTOR Search Results

Contextual Info: FMC6A IMD1A Transistors I Digital Transistor Dual Digital Transistors for Power Management FMC6A •Features 1 ) DTA115E and DTC115E transistors are housed in an SMT package. •A bsolu te maximum ratings (Ta=25'C) Parameter Supply voltage •C irc u it schematic

1800mhz rf frequency power amplifier circuit

Abstract: RF2126
Contextual Info: RF2126 HIGH POWER LINEAR AMPLIFIER Typical Applications • 2.5GHz ISM Band Applications • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery-Powered Equipment • PCS Communication Systems Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT

Contextual Info: Preliminary Product Description SPA-2118 Stanford Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

Contextual Info: Preliminary Product Description SPA-2118 Sirenza Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

5.1 amplifier circuits diagram

Abstract: digital 5.1 amplifier diagram schematic 5.1 amplifier circuit diagram 5.1 amplifier schematic
Contextual Info: Preliminary Product Description Sirenza Microdevices’ SPA-5016 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.

v726

Abstract: 25c2625
Contextual Info: Preliminary Product Description SPA-2318 Stanford Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam

Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT

267M3502104

Abstract: toko 5c TOP MARKING C1 ROHM MCH18 MCR03 SPA-2318 SPA-2318Z TAJB106K020R 6525C
Contextual Info: SPA-2318 Product Description Sirenza Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth

25C2625

Abstract: power amp schematic
Contextual Info: Preliminary Product Description SPA-2318 Sirenza Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

Contextual Info: Preliminary Product Description SPA-1118 Stanford Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

toko 5c

Abstract: MCH18 MCR03 SPA-2318 TAJB106K020R SPA-2318Z
Contextual Info: SPA-2318 Z SPA-2318(Z) Low Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: ESOP-8 Product Description Features RFMD’s SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT)

transistor 4216

Abstract: tl 4216
Contextual Info: Preliminary Product Description Sirenza Microdevices’ SPA-4216 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.

Contextual Info: Preliminary Product Description SPA-1118 Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

Contextual Info: Product Description SPA-1218 Sirenza Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

MCH18

Abstract: MCR03 SPA-2118 TAJB106K020R SPA2118 2118
Contextual Info: SPA-2118 Z SPA-2118(Z) 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS RoHS Compliant and Pb-Free Product (Z Part Number) Package: ESOP-8 Product Description Features RFMD’s SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic

Contextual Info: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam

ze 003 driver

Abstract: SXA-289-TR1 ze 003 SXA-289
Contextual Info: Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which

TAJB106K020R

Abstract: ECB-101161
Contextual Info: Preliminary Product Description SPA-1218 Sirenza Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

ECB-101161

Contextual Info: Preliminary Product Description SPA-1218 Sirenza Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

MCH18

Abstract: ECB-101161 spa-1318
Contextual Info: Preliminary Product Description SPA-1318 Sirenza Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

Contextual Info: Preliminary Product Description SPA-1318 Sirenza Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

XA2 MMIC

Contextual Info: Preliminary Preliminary Product Description Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular