SCHEMATIC POWER SUPPLY TRANSISTOR Search Results

BUX348

Contextual Info: BUX348 FAST-SWITCHING POWER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE FAST SWITCHING OFF-LINE APPLICATIONS TO 380V APPLICATIONS . SWITCH MODE POWER SUPPLIES . UNINTERRUPTABLE POWER SUPPLY . DC AND AC MOTOR CONTROL INTERNAL SCHEMATIC DIAGRAM

transorb 400v

Abstract: transorb diode BIDIRECTIONAL p4625-nd KC006L-ND 12v transformer diode RS405L 29MF250-9 220uF 450v 29SJ250-10k RS405L Power
Contextual Info: March 1999 Application Note 42043 ML4803 240W Off-Line Power Supply with PFC INTRODUCTION Included in this Application Note are a reference schematic, ML4803 design equations, the circuit layout, and parts list. The reference schematic demonstrates how the ML4803 can meet the requirements of a PFC

R2d DIODE

Abstract: R2C Zener optocoupler MTBF transformer mtbf diode r2c transistor t1A Zener Diode r2b TRANSISTOR mosfet transistor R2b r2c transistor
Contextual Info: Preliminary Reliability Prediction Analysis For Power Supply Model: KPS15 Series 1 INTRODUCTION This analysis and prediction is based on Part Count Reliability Prediction method as specified in MILHDBK-217F. The component list is based on the schematic diagram of the power supply unit. It must

hseries

Abstract: 50-902-0 300C mosfet MTBF
Contextual Info: Preliminary Reliability Prediction Analysis For Power Supply Model HTD Case style 1 INTRODUCTION This analysis and prediction is based on Part Count Reliability Prediction method as specified in MILHDBK-217F. The component list is based on the schematic diagram of the power supply unit. It must

SCS120PW12

Abstract: 300C hrs connector circuit board mtbf
Contextual Info: Preliminary Reliability Prediction Analysis For Power Supply Model: SCS120PW-12 through 24V 1 INTRODUCTION This analysis and prediction is based on Part Count Reliability Prediction method as specified in MILHDBK-217F. The component list is based on the schematic diagram of the power supply unit. It must

Contextual Info: FMC6A IMD1A Transistors I Digital Transistor Dual Digital Transistors for Power Management FMC6A •Features 1 ) DTA115E and DTC115E transistors are housed in an SMT package. •A bsolu te maximum ratings (Ta=25'C) Parameter Supply voltage •C irc u it schematic

on line ups circuit schematic diagram

Abstract: AN3020 SA2531 SA2532 SAN3020
Contextual Info: sames SAN3020 APPLICATION NOTE SINGLE CHIP TELEPHONE POWER EXTRACTION FOR EXTERNAL LOADS 1 Scope This application note describes a simple add-on circuit for extracting current to supply external loads. It also includes hardware description ,schematic and Vout/Iout curves.

Contextual Info: User's Guide SLVU392 – July 2010 TPS53125EVM-599 The TPS53125EVM-599 Evaluation Module presents an easy-to-use reference design for a common dual output power supply using the TPS53125 controller in cost-sensitive applications. Also included are the schematic, board layout, and bill of materials.

moc812

Abstract: MOC8113 MOC8111 MOC8111S MOC8111SD MOC8111W MOC8112
Contextual Info: 6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS NO BASE CONNECTION MOC8111 MOC8112 MOC8113 PACKAGE SCHEMATIC ANODE 1 6 6 N/C 6 CATHODE 2 1 5 COLLECTOR 1 N/C 3 4 EMITTER 6 1 DESCRIPTION The MOC811X series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor is not

CNY17F-3

Abstract: moc8103 MOC8101-5 ic base for 40 pin DIP ic CNY17F-X CNY17F-1 CNY17F-2 MOC8101 CNY17F2 MOC8104
Contextual Info: 6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS NO BASE CONNECTION MOC8101 MOC8105 CNY17F-1 MOC8102 MOC8106 CNY17F-2 MOC8103 MOC8107 CNY17F-3 MOC8104 MOC8108 CNY17F-4 PACKAGE SCHEMATIC 1 NC 2 6 6 5 6 3 NC 4 1 PIN 1. ANODE 2. CATHODE 3. NO CONNECTION

031-208

Contextual Info: RF2126 HIGH POWER LINEAR AMPLIFIER Typical Applications • 2.5GHz ISM Band Applications • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery-Powered Equipment • PCS Communication Systems Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT

1800mhz rf frequency power amplifier circuit

Abstract: RF2126
Contextual Info: RF2126 HIGH POWER LINEAR AMPLIFIER Typical Applications • 2.5GHz ISM Band Applications • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery-Powered Equipment • PCS Communication Systems Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT

1800mhz rf frequency power amplifier circuit

Contextual Info: RF2126 HIGH POWER LINEAR AMPLIFIER Typical Applications • 2.5GHz ISM Band Applications • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery-Powered Equipment • PCS Communication Systems Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT

Contextual Info: Preliminary Product Description SPA-2118 Stanford Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

5.1 amplifier circuits diagram

Abstract: digital 5.1 amplifier diagram schematic 5.1 amplifier circuit diagram 5.1 amplifier schematic
Contextual Info: Preliminary Product Description Sirenza Microdevices’ SPA-5016 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.

v726

Abstract: 25c2625
Contextual Info: Preliminary Product Description SPA-2318 Stanford Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

IC-276

Abstract: 25c2625
Contextual Info: Preliminary Product Description SPA-2318 Sirenza Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam

Contextual Info: Advanced Information Product Description Sirenza Microdevices’ SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam

Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT

25c2625

Abstract: ECB-101161 267M3502104
Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT

a3909

Contextual Info: Preliminary Preliminary Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth

Contextual Info: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic

267M3502104

Abstract: toko 5c TOP MARKING C1 ROHM MCH18 MCR03 SPA-2318 SPA-2318Z TAJB106K020R 6525C
Contextual Info: SPA-2318 Product Description Sirenza Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth