SC89 MARKING C Search Results

SC-89

Abstract: diode marking N9 DAN222 n923 diode N9
Contextual Info: WEITRON WAN222 Surface Mount Switching Diode SWITCHING DIODE 100m AMPERRES 80 VOLTS Features: *Extremely High Switching Speedff *Low Reverse Leakage Current *Small Outline Surface Mount SC-89 Package *High Reliability SC-89 SOT-523F Applications: Ultra High Speed Switching

Contextual Info: WEITRON WAN222 Surface Mount Switching Diode SWITCHING DIODE 100m AMPERRES 80 VOLTS Features: *Extremely High Switching Speedff *Low Reverse Leakage Current *Small Outline Surface Mount SC-89 Package *High Reliability SC-89 SOT-523F Applications: Ultra High Speed Switching

Contextual Info: WEITRON WAN222 Surface Mount Switching Diode SWITCHING DIODE 100m AMPERRES 80 VOLTS * “G” Lead Pb -Free Features: *Extremely High Switching Speedff *Low Reverse Leakage Current *Small Outline Surface Mount SC-89 Package *High Reliability SC-89 (SOT-523F)

SC-75A

Abstract: Si1013X-T1-E3 SC-75 SC-89 Si1013R Si1013R-T1-E3 Si1013X Si1013X-T1-GE3
Contextual Info: Si1013R/X Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 • Halogen-free Option Available • High-Side Switching •

Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTA123EET1 PNP Silicon Surface Mount Transistors With Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

STN1012

Abstract: 1012 transistor SC89 SC-89 on SOT523 IS015
Contextual Info: 1012 STN STN1012 Dual N Channel Enhancement Mode MOSFET 0.65A DESCRIPTION STN1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching

SC-89

Abstract: BAV70T
Contextual Info: BAV70T Surface Mount Switching Diodes SWITCHING DIODES 200 mAMPERES 70 VOLTS P b Lead Pb -Free Features: * Ultra-Small Surface Mount Package * Fast switching Speed * For General Purpose Switching Applications * High Conductance Mechanical Data: SOT-523F(SC-89)

P1013

Abstract: MOSFET 20V 45A SC89 SC-89 MOSFET P 950 STP1013
Contextual Info: P1013 ST STP1013 Dual P Channel Enhancement Mode MOSFET -0.45A DESCRIPTION STP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching

transistor smd ZR

Abstract: MARKING SMD PNP TRANSISTOR Zr transistor smd ZR npn TRANSISTOR SMD MARKING CODE UA transistor SMD BP smd transistor marking zr smd code marking sot23 philips transistor smd code TRANSISTOR SMD MARKING CODE transistor ZR 08
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PC4617J NPN general purpose transistor Product specification Supersedes data of 1999 May 04 2001 Aug 03 Philips Semiconductors Product specification NPN general purpose transistor 2PC4617J PINNING FEATURES • Power dissipation comparable to SOT23

SC-89

Contextual Info: NZL5V6AXV3T1 Series Preferred Devices Zener Voltage Regulators SC - 89 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring ESD protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers,

si1013r

Abstract: SI1013X-T1-GE3 SC-75 SC-75A SC-89 Si1013R-T1-E3 Si1013X Si1013X-T1-E3 VISHAY MARKING Sc
Contextual Info: Si1013R/X Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 • Halogen-free Option Available • High-Side Switching •

transistor smd YR

Abstract: SMD TRANSISTOR MARKING CODE YR yq smd transistor smd transistor marking lp TRANSISTOR SMD MARKING CODE X D marking code YR SMD ic TRANSISTOR SMD npn MARKING CODE YR 2PA1774QJ smd transistor marking Y.S transistor smd marking ys
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PA1774J PNP general purpose transistor Product specification Supersedes data of 2000 Dec 12 2001 Aug 03 Philips Semiconductors Product specification PNP general purpose transistor 2PA1774J PINNING FEATURES • Power dissipation comparable to SOT23

Contextual Info: BAW56T Monolithic Dual Swithcing Diode Common Anode SWITCHING DIODES 200 mAMPERES 70 VOLTS P b Lead Pb -Free Features: * We Declare that the Material of Product Compliance With RoHS Requirements SOT-523F(SC-89) SOT-523F Outline Dimensions (SC-89) Unit:mm A

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode 1 L1SS360TT1G Features • We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device PACKAGE Shipping 2 L1SS360TT1G SC89 3000 Tape & Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET LNTA4001NT1G 20 V, 238 mA, Single, N-Channel, Gate ESD Protection 3 Features •ăLow Gate Charge for Fast Switching •ăSmall 1.6 x 1.6 mm Footprint •ăESD Protected Gate •ăPb-Free Package is Available

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode Features • We declare that the material of product compliance with RoHS requirements. L1SS360TT1G S-L1SS360TT1G z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

SC-89

Contextual Info: 2N7002KT N-Channel ENHANCEMENT MODE POWER MOSFET 3 P b Lead Pb -Free 1 2 FEATURES: SC-89 * Gate-Source ESD Protected: 1500 V * Fast Switching Speed * Low On-Resistance * Low Voltage Driver Drain 3 APPLICATIONS: * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories

DG2011

Abstract: DG2011DX-T1 HP4192A SC-89
Contextual Info: DG2011 Vishay Siliconix Low-Voltage, Low rON, Single SPDT Analog Switch In SC-89 Package FEATURES BENEFITS D Low Voltage Operation 1.8 V to 5.5 V D Low On-Resistance - rON: 1.8 W @ 2.7 V D Low Charge Injection D Low Voltage Logic Compatible D SC-89 Package (1.6 x 1.6 mm)

Contextual Info: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21

LNTA4001NT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. LNTA4001NT1G S-LNTA4001NT1G Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection Features •ăLow Gate Charge for Fast Switching •ăSmall 1.6 x 1.6 mm Footprint •ăESD Protected Gate •ăPb-Free Package is Available

K1 transistor

Abstract: K1 transistor datasheets LDTB123TET1G SC-89 "device marking" k1 marking
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • • LDTB123TET1G Applications Inverter, Interface, Driver 3 Features 1 Built-in bias resistors enable the configuration of an

LDTA113ZET1G

Abstract: SC-89
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA113ZET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an

AOZ8001K

Abstract: AOZ8001KI AOZ8001KIL SC-89
Contextual Info: AOZ8001K Ultra-Low Capacitance TVS Diode Array General Description Features The AOZ8001K is a transient voltage suppressor array designed to protect high speed data lines from ESD and lightning. ● – IEC 61000-4-2, level 4 ESD immunity test – ±15kV (air discharge) and ±8kV (contact discharge)