SC89 MARKING C Search Results

SC-89

Abstract: diode marking N9 DAN222 n923 diode N9
Contextual Info: WEITRON WAN222 Surface Mount Switching Diode SWITCHING DIODE 100m AMPERRES 80 VOLTS Features: *Extremely High Switching Speedff *Low Reverse Leakage Current *Small Outline Surface Mount SC-89 Package *High Reliability SC-89 SOT-523F Applications: Ultra High Speed Switching

Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTA123EET1 PNP Silicon Surface Mount Transistors With Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

transistor smd ZR

Abstract: MARKING SMD PNP TRANSISTOR Zr transistor smd ZR npn TRANSISTOR SMD MARKING CODE UA transistor SMD BP smd transistor marking zr smd code marking sot23 philips transistor smd code TRANSISTOR SMD MARKING CODE transistor ZR 08
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PC4617J NPN general purpose transistor Product specification Supersedes data of 1999 May 04 2001 Aug 03 Philips Semiconductors Product specification NPN general purpose transistor 2PC4617J PINNING FEATURES • Power dissipation comparable to SOT23

SC-89

Contextual Info: NZL5V6AXV3T1 Series Preferred Devices Zener Voltage Regulators SC - 89 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring ESD protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers,

si1013r

Abstract: SI1013X-T1-GE3 SC-75 SC-75A SC-89 Si1013R-T1-E3 Si1013X Si1013X-T1-E3 VISHAY MARKING Sc
Contextual Info: Si1013R/X Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 • Halogen-free Option Available • High-Side Switching •

Contextual Info: BAW56T Monolithic Dual Swithcing Diode Common Anode SWITCHING DIODES 200 mAMPERES 70 VOLTS P b Lead Pb -Free Features: * We Declare that the Material of Product Compliance With RoHS Requirements SOT-523F(SC-89) SOT-523F Outline Dimensions (SC-89) Unit:mm A

SC-89

Contextual Info: 2N7002KT N-Channel ENHANCEMENT MODE POWER MOSFET 3 P b Lead Pb -Free 1 2 FEATURES: SC-89 * Gate-Source ESD Protected: 1500 V * Fast Switching Speed * Low On-Resistance * Low Voltage Driver Drain 3 APPLICATIONS: * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories

DG2011

Abstract: DG2011DX-T1 HP4192A SC-89
Contextual Info: DG2011 Vishay Siliconix Low-Voltage, Low rON, Single SPDT Analog Switch In SC-89 Package FEATURES BENEFITS D Low Voltage Operation 1.8 V to 5.5 V D Low On-Resistance - rON: 1.8 W @ 2.7 V D Low Charge Injection D Low Voltage Logic Compatible D SC-89 Package (1.6 x 1.6 mm)

LNTA4001NT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. LNTA4001NT1G S-LNTA4001NT1G Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection Features •ăLow Gate Charge for Fast Switching •ăSmall 1.6 x 1.6 mm Footprint •ăESD Protected Gate •ăPb-Free Package is Available

K1 transistor

Abstract: K1 transistor datasheets LDTB123TET1G SC-89 "device marking" k1 marking
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • • LDTB123TET1G Applications Inverter, Interface, Driver 3 Features 1 Built-in bias resistors enable the configuration of an

LDTA113ZET1G

Abstract: SC-89
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA113ZET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an

LDTD114EET1G

Abstract: SC-89
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTD114EET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an

BC847B-1F

Abstract: BC847A BC847B BC847C SC-89
Contextual Info: BC847AT/BT/CT COLLECTOR 3 General Purpose Transistor NPN Silicon 33 1 1 BASE 2 SC-89 SOT-523F 2 EMITTER M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous

Contextual Info: BC847AT/BT/CT COLLECTOR 3 General Purpose Transistor NPN Silicon 33 1 1 BASE * “G” Lead Pb -Free 2 SC-89 (SOT-523F) 2 EMITTER M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

Contextual Info: RClamp0502A RailClamp Low Capacitance TVS Array PROTECTION PRODUCTS - RailClamp® Description Features ‹ Transient protection for high-speed data lines to The RailClamp® series consists of ultra low capacitance TVS arrays designed to protect high speed data interfaces. This series has been specifically designed to

Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LDTA143EET1 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

Contextual Info: WTX1013 P-Channel 1.8-V G-S MOSFET P b Lead(Pb)-Free 3 FEATURES: 1 * TrenchFET@ Power MOSFET: 1.8-V Rated * Gate-Source ESD Protected: 2000V * High-Side Switching * Low On-Resistance: 1.2Ω * Low Threshold: 0.8 V (typ) * Fast Switching Speed: 14 ns * S-Prefix for Automotive and Other Applications Requiring

SC-75

Abstract: SC-75A SC-89 Si1013R Si1013X Si1013X-T1-GE3
Contextual Info: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21

LDTA144TET1G

Abstract: SC-89
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA144TET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an

LDTA144GET1G

Abstract: SC-89
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA144GET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an

LDTC114GET1G

Abstract: SC-89 making h8
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC114GET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an

LDTA113TKT1G

Abstract: transistor marking 1m SC-89
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA113TKT1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an

LDTA124TET1G

Abstract: transistor marking p6 SC-89
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA124TET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an

LDTC115GET1G

Abstract: SC-89
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC115GET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an