SC88 MARKING A1 Search Results
SC88 MARKING A1 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2910/BQA |
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2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA |
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54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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| 9936/BCA |
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9936 - Hex Inverter - Dual marked (M38510/03003BCA) |
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| 54AC86/SDA-R |
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54AC86/SDA-R - Dual marked (M38510R75202SDA) |
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SC88 MARKING A1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
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1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE | |
smd dual diode code A7
Abstract: nxp Tape and Reel Information BAV756S/SG115 SMD MARKING CODE 101 SOT23-5 BAV756S BAW56S BAW56 BAW56M smd diode code A7 BAW56T
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BAV756S; BAW56 BAV756S OT363 SC-88 BAW56 O-236AB BAW56M OT883 SC-101 smd dual diode code A7 nxp Tape and Reel Information BAV756S/SG115 SMD MARKING CODE 101 SOT23-5 BAV756S BAW56S BAW56M smd diode code A7 BAW56T | |
LRC099-04BT1GContextual Info: LESHAN RADIO COMPANY, LTD. 4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY LRC099-04BT1G S-LRC099-04BT1G DESCRIPTIONS The LRC099-04BT1G is a 4-channel ultra low capacitance rail clamp ESD protection diodes array. Each channel consists of 6 a pair of ESD diodes that steer positive or negative ESD current |
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LRC099-04BT1G S-LRC099-04BT1G LRC099-04BT1G SC-88 | |
lm2804
Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
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BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 | |
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Contextual Info: UESD6V8L5A6 Low Capacitance 5 Line ESD Protection Diode Array UESD6V8L5A6 SC70-6 / SC88 / SOT363 General Description The UESD6V8L5A6 of TVS array is designed to protect sensitive electronics from damage or latch-up due to ESD, for use in applications where board space is at a premium. It is unidirectional |
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SC70-6 OT363 | |
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Contextual Info: UESD6V85CT36 5 Line ESD Protection Diode Array UESD6V85CT36 SC70-6 / SC88 / SOT363 General Description The UESD6V85CT36 of TVS array is designed to protect sensitive electronics from damage or latch-up due to ESD, for use in applications where board space is at a premium. It is unidirectional |
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UESD6V85CT36 UESD6V85CT36 SC70-6 OT363 | |
smd marking AV SOT363
Abstract: 1PS66SB63 1PS66SB82 1PS88SB82
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1PS66SB82; 1PS88SB82 1PS66SB82 OT666 OT363 SC-88 smd marking AV SOT363 1PS66SB63 1PS66SB82 1PS88SB82 | |
marking 4ft sot363
Abstract: marking TR1 4FT SOT363
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MBD128 BC846S MAM340 SC-88 OT363) SC-88) 115002/02/pp8 marking 4ft sot363 marking TR1 4FT SOT363 | |
marking code .Bt2
Abstract: BT225 BP317 marking Bt2
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MBD128 MAM426 115002/01/pp8 marking code .Bt2 BT225 BP317 marking Bt2 | |
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Contextual Info: UM3157 10Ω Low-Voltage SPDT Analog Switch UM3157 SC70-6/SC88/SOT363 General Description The UM3157 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. It achieves very low propagation delay and RDS ON resistances while maintaining |
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UM3157 UM3157 SC70-6/SC88/SOT363 | |
LBAW56DW1T1GContextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode Features • LBAW56DW1T1G S-LBAW56DW1T1G We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 |
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LBAW56DW1T1G S-LBAW56DW1T1G AEC-Q101 LBAW56DW1T3G S-LBAW56DW1T3G OT-363/SC-88 LBAW56DW1T1G | |
PEMB19
Abstract: PEMD19 PEMH19 PUMB19 PUMD19 PUMH19 PEMB1
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PEMB19; PUMB19 PEMB19 OT666 PEMD19 PEMH19 OT363 SC-88 PUMD19 PEMB19 PEMD19 PEMH19 PUMB19 PUMD19 PUMH19 PEMB1 | |
marking 5ft sot363
Abstract: MARKING CODE 5ft sot363 SC-88 5ft 5FT SOT363 marking TR1 5Ft marking SC88 SOT363 plastic package 5ft MARKING CODE 5Ft marking SOT-363
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MBD128 BC856S MAM339 SC-88 OT363) SC-88) 115002/01/pp8 marking 5ft sot363 MARKING CODE 5ft sot363 SC-88 5ft 5FT SOT363 marking TR1 5Ft marking SC88 SOT363 plastic package 5ft MARKING CODE 5Ft marking SOT-363 | |
BAV756S
Abstract: BAV756S/SG115 BAW56 BAW56M BAW56S BAW56T BAW56W SC-101 SC-75 sot23-4 marking a1
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BAV756S; BAW56 BAV756S OT363 SC-88 BAW56 O-236AB BAW56M OT883 SC-101 BAV756S BAV756S/SG115 BAW56M BAW56S BAW56T BAW56W SC-101 SC-75 sot23-4 marking a1 | |
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MARKING bt1 sot363
Abstract: MLD411 BT1 SOT363 PUMB11 bt1 marking MARKING 5F SOT363
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MBD128 PUMB11 MAM426 613514/01/pp8 MARKING bt1 sot363 MLD411 BT1 SOT363 PUMB11 bt1 marking MARKING 5F SOT363 | |
PEMB20
Abstract: PUMH20 PEMD20 PEMH20 PUMB20 PUMD20
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PEMB20; PUMB20 PEMB20 OT666 PEMD20 PEMH20 OT363 SC-88 PUMD20 PEMB20 PUMH20 PEMD20 PEMH20 PUMB20 PUMD20 | |
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Contextual Info: NSB13211DW6T1G Dual Complementary Bias Resistor Transistors Complementary BRTs with Monolithic Bias Network NSB13211DW6T1G contains a single PNP bias resistor transistor and a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device |
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NSB13211DW6T1G NSB13211DW6T1G SC-88/SOT-363 NSB13211DW6/D | |
PEMH24
Abstract: PEMB24 PUMB24 PUMH24 PEMD24 PUMD24 PEMB2
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PEMB24; PUMB24 PEMB24 OT666 PEMD24 PEMH24 OT363 SC-88 PUMD24 PEMH24 PEMB24 PUMB24 PUMH24 PEMD24 PUMD24 PEMB2 | |
marking code IC .ftf
Abstract: A.4 SOT363 MARKING SC marking code NPN transistor PUMT1
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MBD128 SC-88; OT363 SCA73 613514/04/pp8 marking code IC .ftf A.4 SOT363 MARKING SC marking code NPN transistor PUMT1 | |
marking FtZ sot363
Abstract: marking code IC .ftz FtZ MARKING CODE data sheet transistor PNP NPN/PNP transistor
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MBD128 SCA74 613514/04/pp8 marking FtZ sot363 marking code IC .ftz FtZ MARKING CODE data sheet transistor PNP NPN/PNP transistor | |
MAM341Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMZ1 NPN/PNP general purpose transistors Product specification Supersedes data of 2002 May 6 2004 Oct 15 Philips Semiconductors Product specification NPN/PNP general purpose transistors FEATURES PUMZ1 |
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MBD128 SCA76 R75/05/pp7 MAM341 | |
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Contextual Info: UM5304EEXF Quad Channel Low Capacitance ESD Protection Array UM5304EEAF UM5304EEBF UM5304EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 General Description UM5304EEXF are surge rated diode arrays designed to protect high speed data interfaces. This series has been |
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UM5304EEXF UM5304EEAF UM5304EEBF UM5304EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 UM5304EEXF | |
NTJD5121NT1G
Abstract: 419B-02
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NTJD5121N SC-88 OT-363) NTJD5121N/D NTJD5121NT1G 419B-02 | |
PUMD14
Abstract: PUMH14 PEMB14 PEMD14 PEMH14 PUMB14 PEMB1
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PEMD14; PUMD14 PEMD14 OT666 PEMB14 PEMH14 OT363 SC-88 PUMB14 PUMD14 PUMH14 PEMB14 PEMD14 PEMH14 PUMB14 PEMB1 | |