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    SC88 MARKING A1 Search Results

    SC88 MARKING A1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2910/BQA
    Rochester Electronics LLC 2910 - Microprogram Controller - Dual marked (7801701QA) PDF Buy
    MQ80C186-12/BYA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) PDF Buy
    54L04/BDA
    Rochester Electronics LLC 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) PDF Buy
    9936/BCA
    Rochester Electronics LLC 9936 - Hex Inverter - Dual marked (M38510/03003BCA) PDF Buy
    54AC86/SDA-R
    Rochester Electronics LLC 54AC86/SDA-R - Dual marked (M38510R75202SDA) PDF Buy

    SC88 MARKING A1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE PDF

    smd dual diode code A7

    Abstract: nxp Tape and Reel Information BAV756S/SG115 SMD MARKING CODE 101 SOT23-5 BAV756S BAW56S BAW56 BAW56M smd diode code A7 BAW56T
    Contextual Info: BAV756S; BAW56 series High-speed switching diodes 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC Package


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    BAV756S; BAW56 BAV756S OT363 SC-88 BAW56 O-236AB BAW56M OT883 SC-101 smd dual diode code A7 nxp Tape and Reel Information BAV756S/SG115 SMD MARKING CODE 101 SOT23-5 BAV756S BAW56S BAW56M smd diode code A7 BAW56T PDF

    LRC099-04BT1G

    Contextual Info: LESHAN RADIO COMPANY, LTD. 4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY LRC099-04BT1G S-LRC099-04BT1G DESCRIPTIONS The LRC099-04BT1G is a 4-channel ultra low capacitance rail clamp ESD protection diodes array. Each channel consists of 6 a pair of ESD diodes that steer positive or negative ESD current


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    LRC099-04BT1G S-LRC099-04BT1G LRC099-04BT1G SC-88 PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


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    BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    Contextual Info: UESD6V8L5A6 Low Capacitance 5 Line ESD Protection Diode Array UESD6V8L5A6 SC70-6 / SC88 / SOT363 General Description The UESD6V8L5A6 of TVS array is designed to protect sensitive electronics from damage or latch-up due to ESD, for use in applications where board space is at a premium. It is unidirectional


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    SC70-6 OT363 PDF

    Contextual Info: UESD6V85CT36 5 Line ESD Protection Diode Array UESD6V85CT36 SC70-6 / SC88 / SOT363 General Description The UESD6V85CT36 of TVS array is designed to protect sensitive electronics from damage or latch-up due to ESD, for use in applications where board space is at a premium. It is unidirectional


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    UESD6V85CT36 UESD6V85CT36 SC70-6 OT363 PDF

    smd marking AV SOT363

    Abstract: 1PS66SB63 1PS66SB82 1PS88SB82
    Contextual Info: 1PS66SB82; 1PS88SB82 15 V, 30 mA low Cd Schottky barrier diodes Rev. 03 — 24 January 2005 Product data sheet 1. Product profile 1.1 General description Epitaxial low capacitance Schottky barrier diodes encapsulated in very small SMD plastic packages. Table 1:


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    1PS66SB82; 1PS88SB82 1PS66SB82 OT666 OT363 SC-88 smd marking AV SOT363 1PS66SB63 1PS66SB82 1PS88SB82 PDF

    marking 4ft sot363

    Abstract: marking TR1 4FT SOT363
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC846S NPN general purpose double transistor Product specification Supersedes data of 1999 May 28 1999 Sep 01 Philips Semiconductors Product specification NPN general purpose double transistor BC846S


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    MBD128 BC846S MAM340 SC-88 OT363) SC-88) 115002/02/pp8 marking 4ft sot363 marking TR1 4FT SOT363 PDF

    marking code .Bt2

    Abstract: BT225 BP317 marking Bt2
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMB2 PNP resistor-equipped double transistor Product specification 1999 Aug 03 Philips Semiconductors Product specification PNP resistor-equipped double transistor PUMB2 FEATURES • Transistors with built-in bias resistors R1 and R2


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    MBD128 MAM426 115002/01/pp8 marking code .Bt2 BT225 BP317 marking Bt2 PDF

    Contextual Info: UM3157 10Ω Low-Voltage SPDT Analog Switch UM3157 SC70-6/SC88/SOT363 General Description The UM3157 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. It achieves very low propagation delay and RDS ON resistances while maintaining


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    UM3157 UM3157 SC70-6/SC88/SOT363 PDF

    LBAW56DW1T1G

    Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode Features • LBAW56DW1T1G S-LBAW56DW1T1G We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101


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    LBAW56DW1T1G S-LBAW56DW1T1G AEC-Q101 LBAW56DW1T3G S-LBAW56DW1T3G OT-363/SC-88 LBAW56DW1T1G PDF

    PEMB19

    Abstract: PEMD19 PEMH19 PUMB19 PUMD19 PUMH19 PEMB1
    Contextual Info: PEMB19; PUMB19 PNP/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = open Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description PNP/PNP resistor-equipped transistors. Table 1: Product overview Type number Package Philips


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    PEMB19; PUMB19 PEMB19 OT666 PEMD19 PEMH19 OT363 SC-88 PUMD19 PEMB19 PEMD19 PEMH19 PUMB19 PUMD19 PUMH19 PEMB1 PDF

    marking 5ft sot363

    Abstract: MARKING CODE 5ft sot363 SC-88 5ft 5FT SOT363 marking TR1 5Ft marking SC88 SOT363 plastic package 5ft MARKING CODE 5Ft marking SOT-363
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC856S PNP general purpose double transistor Product specification 1999 Aug 24 Philips Semiconductors Product specification PNP general purpose double transistor BC856S FEATURES • Two transistors in one package


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    MBD128 BC856S MAM339 SC-88 OT363) SC-88) 115002/01/pp8 marking 5ft sot363 MARKING CODE 5ft sot363 SC-88 5ft 5FT SOT363 marking TR1 5Ft marking SC88 SOT363 plastic package 5ft MARKING CODE 5Ft marking SOT-363 PDF

    BAV756S

    Abstract: BAV756S/SG115 BAW56 BAW56M BAW56S BAW56T BAW56W SC-101 SC-75 sot23-4 marking a1
    Contextual Info: BAV756S; BAW56 series High-speed switching diodes Rev. 05 — 26 November 2007 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview


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    BAV756S; BAW56 BAV756S OT363 SC-88 BAW56 O-236AB BAW56M OT883 SC-101 BAV756S BAV756S/SG115 BAW56M BAW56S BAW56T BAW56W SC-101 SC-75 sot23-4 marking a1 PDF

    MARKING bt1 sot363

    Abstract: MLD411 BT1 SOT363 PUMB11 bt1 marking MARKING 5F SOT363
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMB11 PNP resistor-equipped double transistor Product specification 2000 Aug 08 Philips Semiconductors Product specification PNP resistor-equipped double transistor PUMB11 FEATURES • Transistors with built-in bias resistors R1 and R2


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    MBD128 PUMB11 MAM426 613514/01/pp8 MARKING bt1 sot363 MLD411 BT1 SOT363 PUMB11 bt1 marking MARKING 5F SOT363 PDF

    PEMB20

    Abstract: PUMH20 PEMD20 PEMH20 PUMB20 PUMD20
    Contextual Info: PEMB20; PUMB20 PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 02 — 21 February 2005 Product data sheet 1. Product profile 1.1 General description PNP/PNP resistor-equipped transistors. Table 1: Product overview Type number Package


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    PEMB20; PUMB20 PEMB20 OT666 PEMD20 PEMH20 OT363 SC-88 PUMD20 PEMB20 PUMH20 PEMD20 PEMH20 PUMB20 PUMD20 PDF

    Contextual Info: NSB13211DW6T1G Dual Complementary Bias Resistor Transistors Complementary BRTs with Monolithic Bias Network NSB13211DW6T1G contains a single PNP bias resistor transistor and a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device


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    NSB13211DW6T1G NSB13211DW6T1G SC-88/SOT-363 NSB13211DW6/D PDF

    PEMH24

    Abstract: PEMB24 PUMB24 PUMH24 PEMD24 PUMD24 PEMB2
    Contextual Info: PEMB24; PUMB24 PNP/PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Rev. 01 — 18 February 2005 Product data sheet 1. Product profile 1.1 General description PNP/PNP resistor-equipp ed transistors. Table 1: Product overview Type number Package


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    PEMB24; PUMB24 PEMB24 OT666 PEMD24 PEMH24 OT363 SC-88 PUMD24 PEMH24 PEMB24 PUMB24 PUMH24 PEMD24 PUMD24 PEMB2 PDF

    marking code IC .ftf

    Abstract: A.4 SOT363 MARKING SC marking code NPN transistor PUMT1
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 PUMT1 PNP general purpose double transistor Product specification Supersedes data of 1999 Apr 14 2001 Dec 19 Philips Semiconductors Product specification PNP general purpose double transistor FEATURES


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    MBD128 SC-88; OT363 SCA73 613514/04/pp8 marking code IC .ftf A.4 SOT363 MARKING SC marking code NPN transistor PUMT1 PDF

    marking FtZ sot363

    Abstract: marking code IC .ftz FtZ MARKING CODE data sheet transistor PNP NPN/PNP transistor
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 PUMZ1 NPN/PNP general purpose transistors Preliminary specification Supersedes data of 1999 Apr 14 2002 May 06 Philips Semiconductors Preliminary specification NPN/PNP general purpose transistors


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    MBD128 SCA74 613514/04/pp8 marking FtZ sot363 marking code IC .ftz FtZ MARKING CODE data sheet transistor PNP NPN/PNP transistor PDF

    MAM341

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMZ1 NPN/PNP general purpose transistors Product specification Supersedes data of 2002 May 6 2004 Oct 15 Philips Semiconductors Product specification NPN/PNP general purpose transistors FEATURES PUMZ1


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    MBD128 SCA76 R75/05/pp7 MAM341 PDF

    Contextual Info: UM5304EEXF Quad Channel Low Capacitance ESD Protection Array UM5304EEAF UM5304EEBF UM5304EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 General Description UM5304EEXF are surge rated diode arrays designed to protect high speed data interfaces. This series has been


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    UM5304EEXF UM5304EEAF UM5304EEBF UM5304EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 UM5304EEXF PDF

    NTJD5121NT1G

    Abstract: 419B-02
    Contextual Info: NTJD5121N Power MOSFET 60 V, 295 mA, Dual N-Channel with ESD Protection, SC-88 Features •ăLow RDS on •ăLow Gate Threshold •ăLow Input Capacitance •ăESD Protected Gate •ăThis is a Pb-Free Device http://onsemi.com V(BR)DSS RDS(on) MAX ID Max


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    NTJD5121N SC-88 OT-363) NTJD5121N/D NTJD5121NT1G 419B-02 PDF

    PUMD14

    Abstract: PUMH14 PEMB14 PEMD14 PEMH14 PUMB14 PEMB1
    Contextual Info: PEMD14; PUMD14 NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open Rev. 01 — 14 January 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP resistor-equipped transistors. Table 1: Product overview Type number Package PNP/PNP


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    PEMD14; PUMD14 PEMD14 OT666 PEMB14 PEMH14 OT363 SC-88 PUMB14 PUMD14 PUMH14 PEMB14 PEMD14 PEMH14 PUMB14 PEMB1 PDF