SC639 Search Results

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. BC637-16 BC639 BC639-10 "C E O 'E B O (V) Min (V) Min (V) Min 60 60 CBO 80 80 80 SC639-16 Electrical Characteristics (Ta=25"C, Unless Otherwise Specified) Po (W) @Tc=25”( 0.8 0.8 0.8 80 0.8

Contextual Info: H M 6 2 W 8 5 1 1 H S e r ie s 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-750 Z Preliminary Rev. 0.0 F eb.27,1997 Description The HM62W8511H is an asynchronous high-speed static RAM organized as 512-kword x 8-bit. It achieves high-speed access time (10/12/15 ns) through 0.35 p.m CMOS process and high-speed circuit designing

L0728

Contextual Info: HM629127HB Series 131072-word x 9-bit High Speed CMOS Static RAM HITACHI ADE-203-738 Z Preliminary Rev. 0.0 Feb. 4,1997 Description The HM629127HB is an asyncronous high speed static RAM organized as 128-k word x 9-bit. It realize high speed access time (15/20 ns) with employing 0.8 (im shrink CMOS process and high speed circuit designing

Contextual Info: HM628511H Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-762 Z Preliminary Rev. 0.0 Mar. 27, 1997 Description The HM628511H Series is an asyncronous high speed static RAM organized as 512-k wordx 8-bit. It has realized high speed access time by employing CMOS process and high speed circuit designing technology. It

HM629127HB

Abstract: HM629127HB-15 HM629127HB-20 HM629127HBJP-15 HM629127HBJP-20 HM629127HBLJP-15 HM629127HBLJP-20 Hitachi DSA00182
Contextual Info: HM629127HB Series 131072-word x 9-bit High Speed CMOS Static RAM ADE-203-738 Z Preliminary Rev. 0.0 Feb. 4, 1997 Description The HM629127HB is an asyncronous high speed static RAM organized as 128-k word × 9-bit. It realize high speed access time (15/20 ns) with employing 0.8 µm shrink CMOS process and high speed circuit designing

HM628511H

Abstract: HM628511HJP-10 HM628511HJP-12 HM628511HJP-15 HM628511HLJP-10 HM628511HLJP-15 HM628511HLJP-12 Hitachi DSA00182
Contextual Info: HM628511H Series 524288-word x 8-bit High Speed CMOS Static RAM ADE-203-762 Z Preliminary Rev. 0.0 Mar. 27, 1997 Description The HM628511H Series is an asyncronous high speed static RAM organized as 512-k word × 8-bit. It has realized high speed access time by employing CMOS process and high speed circuit designing technology. It

HM51W16405

Contextual Info: Package Information There are four types of package for the Hitachi IC Memories, Plastic Mold DIP, CERDIP, Flat Package and Chip Carrier. Please select a suitable package in consideration o f your circumstance. When you use the package that has the material variation, please write down the package name in a form in

HT 1200-4

Abstract: YAMAICHI ic234 PT740 AB TSSOP YAMAICHI SOCKET FP-20-0.65-01 IC51-1444-1354-7 PT817 Enplas drawings IC51-2084-1052-11 IC 7418 IC51-0242-1341
Contextual Info: Hitachi Semiconductor Package Data Book ADE–410–001B 3rd Edition March/97 Semiconductor & Integrated Circuit Devision, Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher functional

Contextual Info: HM629127HB Series 131072-word x 9-bit High Speed CMOS Static RAM HITACHI ADE-203-738 Z Preliminary, Rev. 0.0 Feb. 4, 1997 Description The HM629127HB is an asynchronous high speed static RAM organized as 128-k word x 9-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am shrink CMOS process and high speed circuit

SC 2272

Contextual Info: Package Information There are four types of package for the Hitachi IC Memories, Plastic Mold DIP, CERDIP, Flat Package and Chip Carrier. Please select a suitable package in consideration o f your circumstance. When you use the package that has the material variation, please write down the package name in a form in

Contextual Info: HM628511H Series 524288-word X 8-bit High Speed CMOS Static RAM HITACHI ADE-203-762 Z Preliminary Rev. 0.0 Mar. 27,1997 Description The HM628511H Series is an asyncronous high speed static RAM organized as 512-k word x 8-bit. It has realized high speed access time by employing CMOS process and high speed circuit designing technology.

Contextual Info: HM62W8511H Series 4M High Speed SRAM 512-kword x 8-bit HITACHI ADE-203-750A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM62W8511H is an asynchronous high speed static RAM organized as 512-kword X 8-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 Jim CMOS process and high speed

NEC A39A

Abstract: NEC A39A 240 SOP28 330 mil land pattern NEC A39A 8 PIN mjh 106 120-PIN 282 185 01 smd TRANSISTOR code b6 ED-7500 transistor a39a SIP 400B
Contextual Info: IC PACKAGE MANUAL 1991, 1992, 1994, 1996 Document No. C10943XJ6V0IF00 Previous No. IEI-635, IEI-1213 Date Published January 1996 P Printed in Japan CHAPTER 1 PACKAGE OUTLINES AND EXPLANATION CHAPTER 2 CHAPTER 3 1 THROUGH HOLE PACKAGES 2 SURFACE MOUNT PACKAGES

SC-606-B

Abstract: HM62256B MS-024BB HM6207H HM6208H HM6264B HM6287 HM6288 HM9264B 024bb
Contextual Info: Package Information There are four types of package for the Hitachi IC Memories, Plastic Mold DIP, CERDIP, Flat Package and Chip Carrier. Please select a suitable package in consideration of your circumstance. When you use the package that has the material variation, please write down the package name in a form in

Contextual Info: HM62W9127HB Series 131072-word x 9-bit High Speed CMOS Static RAM HITACHI ADE-203-792 Z Preliminary, Rev. 0.0 Jun. 9, 1997 Description The HM62W9127HB is an asynchronous 3.3 V operation high speed static RAM organized as 131072word x 9-bit. It realize high speed access time (25/30 ns) with employing 0.8 (Am shrink CMOS process

IC Package Names and Code Designations

Abstract: data sheet IC 7408 7404 not gate ic MSP 044 THERMISTOR enplas otq-100-0.5 IC 7404 7406 IC51-1004-809 ic 7404 datasheet HLP40R ic 7408
Contextual Info: Hitachi Semiconductor Package DATA BOOK ADE 410-001A Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher functional capacity and higher density and developing packages

EDR-7311

Abstract: MS-024BB MO-142BO HN27C256A
Contextual Info: Package Information There are four types of package for the Hitachi IC Memories, Plastic Mold DIP, CERDIP, Flat Package and Chip Carrier. Please select a suitable package in consideration o f your circumstance. When you use the package that has the material variation, please write down the package name in a form in

HM62W8511HJP-15

Abstract: HM62W8511HLJP-10 HM62W8511HLJP-12 HM62W8511HLJP-15 HM62W8511HJP-12 HM62W8511H HM62W8511HJP-10 Hitachi DSA00182
Contextual Info: HM62W8511H Series 524288-word x 8-bit High Speed CMOS Static RAM ADE-203-750 Z Preliminary Rev. 0.0 Feb. 27, 1997 Description The HM62W8511H is an asyncronous high speed static RAM organized as 512-kword × 8-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 µm CMOS process and high speed circuit

zua11

Contextual Info: HM62W8511H Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-750 Z Preliminary Rev. 0.0 Feb. 27,1997 Description The HM62W8511H is an asynchronous high-speed static RAM organized as 512-kword x 8-bit. It achieves high-speed access time (10/12/15 ns) through 0.35 )J.m CMOS process and high-speed circuit designing

SC-606-B

Abstract: SC-555-24A BP-119 SC-639 MO-142BA MO-061-AB
Contextual Info: Package Information Package Names and Code Designations T he package nam e assigned by the com pany is a package code indicating the shape of the package, the package m aterial, and the num ber o f pins. The diagram below show s the content o f the code designation.

SC-639

Abstract: h 033 sc639 SOJ-400
Contextual Info: Mounting Pad Packing Magazine Name MJ400-01A LB-044 36 pin SOJ 400 mil 19 1 18 F E H G U J C 36 D B I T K Q M P N M P36LE-400A NOTE Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maxi– mum material condition.