SC-70-6 DUAL Search Results

Contextual Info: SiA931DJ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.065 at VGS = - 10 V - 4.5a 0.080 at VGS = - 6 V - 4.5a 0.100 at VGS = - 4.5 V - 4.5 Qg (Typ.) 4.1 nC a PowerPAK SC-70-6 Dual 1 S1 APPLICATIONS

Si1907DL

Contextual Info: Si1907DL New Product Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.650 @ VGS = –4.5 V "0.56 0.925 @ VGS = –2.5 V "0.47 1.310 @ VGS = –1.8 V "0.39 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3

Contextual Info: SiA921EDJ Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 4.5a 0.098 at VGS = - 2.5 V - 4.5a Qg (Typ.) 4.9 nC PowerPAK SC-70-6 Dual 1 S1 2 G1 3 D2 D1 D1 6 • Load Switch, PA Switch and Battery Switch for Portable

SiA929DJ

Contextual Info: New Product SiA929DJ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.064 at VGS = - 10 V - 4.5a 0.078 at VGS = - 4.5 V - 4.5a 0.120 at VGS = - 2.5 V - 4.5a Qg (Typ.) 6.6 nC PowerPAK SC-70-6 Dual

Contextual Info: New Product SiA929DJ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.064 at VGS = - 10 V - 4.5a 0.078 at VGS = - 4.5 V - 4.5a 0.120 at VGS = - 2.5 V - 4.5a Qg (Typ.) 6.6 nC PowerPAK SC-70-6 Dual

SI1902DL-T1-E3

Abstract: Si1902DL Si1902DL-T1
Contextual Info: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • TrenchFET Power MOSFETS: 2.5 V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS)

74343

Abstract: "marking code D2" Si1970DH Si1970DH-T1-E3
Contextual Info: Si1970DH Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.225 at VGS = 4.5 V 1.3a 0.345 at VGS = 2.5 V 1.3a • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS 1.15 nC SOT-363 SC-70 (6-LEADS)

Contextual Info: _ Si 1905 New Product Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS(V) b (A) r D S (o n) ( ß ) 0.600 @ V GS= -4 .5 V -8 ± 0 .6 0 0.850 @ V q s = -2 .5 V ± 0 .5 0 1.200 @ V G S= -1 .8 V ± 0 .4 2 A \ * SOT-363 SC-70 (6-LEADS)

AS170-92

Abstract: jc sc70-6
Contextual Info: GaAs IC SPDT Reflective Switch Positive Control DC–2 GHz AS170-92 Features SC-70 6 Lead • Low Insertion Loss 0.079 2.00 mm ± 0.008 (0.20 mm) ■ Positive Control Voltage ■ Low DC Power Consumption 0.0256 (0.65 mm) BSC 0.087 (2.20 mm) ± 0.008 (0.20 mm)

Contextual Info: LMV981 SINGLE, LMV982 DUAL 1.8ĆV OPERATIONAL AMPLIFIERS WITH RAILĆTOĆRAIL INPUT AND OUTPUT AND SHUTDOWN SLOS440F − AUGUST 2004 − REVISED MARCH 2005 D 1.8-V, 2.7-V, and 5-V Specifications D Rail-to-Rail Output Swing D D D D D D D LMV981 . . . DBV SOT23-6 OR DCK (SC-70) PACKAGE

sot-363 marking 3C

Abstract: lf 10193
Contextual Info: Sii 900_ Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS(V) Id (A ) r DS(on) (f i ) 0.480 e V q s = 10 V 0.63 0.700 V q s = 4.5 V 0.52 30 SOT-363 SC-70 (6-LEADS) Marking Code Lot Traceability and Oate Code I—- Part # Code

Contextual Info: LMV981 SINGLE, LMV982 DUAL 1.8ĆV OPERATIONAL AMPLIFIERS WITH RAILĆTOĆRAIL INPUT AND OUTPUT AND SHUTDOWN SLOS440G − AUGUST 2004 − REVISED MAY 2005 D 1.8-V, 2.7-V, and 5-V Specifications D Rail-to-Rail Output Swing D D D D D D D LMV981 . . . DBV SOT23-6 OR DCK (SC-70) PACKAGE

Contextual Info: LMV981 SINGLE, LMV982 DUAL 1.8ĆV OPERATIONAL AMPLIFIERS WITH RAILĆTOĆRAIL INPUT AND OUTPUT AND SHUTDOWN SLOS440F − AUGUST 2004 − REVISED MARCH 2005 D 1.8-V, 2.7-V, and 5-V Specifications D Rail-to-Rail Output Swing D D D D D D D LMV981 . . . DBV SOT23-6 OR DCK (SC-70) PACKAGE

Si1912EDH

Contextual Info: SM912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V ) 20 •d ( A ) r D S {on) ( & ) 0.280 @ V Gs = 4.5 V 1.28 0.360 9 VGS = 2.5 V 1.13 0.450 @ VGS = 1.8 V 1.0 SOT-363 SC-70 (6-LEADS) r • TrenchFET Power MOSFETS: 1.8-V Rated

Contextual Info: LMV981 SINGLE, LMV982 DUAL 1.8ĆV OPERATIONAL AMPLIFIERS WITH RAILĆTOĆRAIL INPUT AND OUTPUT AND SHUTDOWN SLOS440F − AUGUST 2004 − REVISED MARCH 2005 D 1.8-V, 2.7-V, and 5-V Specifications D Rail-to-Rail Output Swing D D D D D D D LMV981 . . . DBV SOT23-6 OR DCK (SC-70) PACKAGE

SOT23-6 MARKING m5

Contextual Info: LMV981 SINGLE, LMV982 DUAL 1.8ĆV OPERATIONAL AMPLIFIERS WITH RAILĆTOĆRAIL INPUT AND OUTPUT AND SHUTDOWN SLOS440H − AUGUST 2004 − REVISED JULY 2007 D 1.8-V, 2.7-V, and 5-V Specifications D Rail-to-Rail Output Swing D D D D D D D LMV981 . . . DBV SOT23-6 OR DCK (SC-70) PACKAGE

Contextual Info: TLV61224 SLVSAM7 – MARCH 2011 www.ti.com Single Cell High Efficient Step-Up Converter in 6 Pin SC-70 Package FEATURES APPLICATIONS • • 1 • • • • • • • • • Up to 94% Efficiency at Typical Operating Conditions 5 A Quiescent Current Operating Input Voltage from 0.7 V to 3.0 V

mitsubishi split ac

Contextual Info: M ITSU BISH I LSIs M 5 M 4 4 2 2 5 6 J , L • 8 , ■1 0 , ■ 1 2 1 0 4 8 5 7 6 -B IT D U A L-PO R T D Y N A M IC RAM DESCRIPTION The Mitsubishi M 5 M 4 4 2 2 5 6 J , L is a high speed 10 4857 6-b it PIN CONFIGURATION TOP VIEW Dual Port Dynam ic M em ory equipped w ith a 2 5 6 K x 4

BAV99LT1

Abstract: BAV99RWT1 BAV99WT1
Contextual Info: BAV99WT1, BAV99RWT1 Preferred Devices SC-70/SOT-323 Dual Series Switching Diodes The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • • • • • ESD Protection Polarity Reversal Protection Data Line Protection Inductive Load Protection

DAP202U

Abstract: DAP202UG DAP222 DAP222G DAP222T1 DAP222T1G
Contextual Info: DAP222, DAP202U Preferred Device Common Anode Silicon Dual Switching Diodes These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. The DAP222 device is housed in the SC−75/SOT−416 package which is

Contextual Info: Optical Terminators MU SC FC Harsh Environment •Features 1. Excellent operational qualities 2. Wide varieties of HRS terminatiors Attenuators 3. Dual wavelength : 1310nm and 1550nm for MU terminators 4. Please contact us if you have any requests. Hirose will offer excellent solutions to meet

SBAV99W

Abstract: SBAV99WT1G SBAV99RWT1G bav99wt1g
Contextual Info: BAV99WT1G, SBAV99WT1G, BAV99RWT1G, SBAV99RWT1G Dual Series Switching Diodes http://onsemi.com The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Features SC−70 CASE 419 • These Devices are Pb−Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique

MBD110DW

Abstract: MBD110DWT1 MBD330DW MBD330DWT1 MBD770DW MBD770DWT1 MMBD101LT1 MMBD301LT1 MMBD701LT1 marking code 04 sot-363
Contextual Info: MBD110DWT1, MBD330DWT1, MBD770DWT1 Preferred Device Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and

F16-800

Abstract: AN7512 S8050
Contextual Info: ICs for Audio Common Use AN7512 Dual 1-W BTL audio power amplifier • Overview The AN7512 is an audio power amplifier IC for stereo system. The BTL Balanced Transformer-Less method can provide fewer external parts and more easy design for applications.