SAT 1205 Search Results

LB 11917

Abstract: enthalpy
Contextual Info: STEAM TABLES Properties of Saturated & Superheated Steam Table 1. Saturated Steam: Temperature Table Temp. Fahr. t Abs. Press. Lb per Sq. In. p Specific Volume Sat. Sat. Liquid Evap. Vapor vf vfg vg Sat. Liquid hf Enthalpy Evap. hfg Sat. Vapor hg Sat. Liquid

2sc4983

Contextual Info: SAHYO LOW-SATURATl ON VOLTAGE TR SERI ES Small-Signal Transistors.NO.l The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power ampl ifiers, electrical equipment.

Contextual Info: 1726-1205 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1711-1205 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1723-1205 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)20 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1441-1205 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)150 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1717-1205 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1716-1205 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1714-1205 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1401-1205 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)130 I(C) Max. (A)250 Absolute Max. Power Diss. (W)625 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1713-1205 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)115 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1718-1205 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

IXTD08N100P-1A

Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types

Contextual Info: SILICON N CHANNEL MOS TYPE -GT20G102ÍSM STROBE FLASH APPLICATIONS Unit in ram 1 0 .3 MAX . High Input Impedance . Low Saturation Voltage : V ç e sat)= 8V(Max.) (Ic=130A) . Enhancenent-Mode . 12V Gate Drive riAxinun ratings (Ta-25° o SYMBOL CHARACTERISTIC

2N5089 equivalent

Abstract: D39C4 GES5307 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device V C E sat E b v C EO Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300

2SB1205

Abstract: 2SD1801
Contextual Info: SAfiYO L O W - S A T U R A T IO N V O L T A G E TR S E R I E S Small-Signal Transistors.NO. 1 The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power amplifiers, electrical equipment.

transistor k117

Abstract: transistor k363 K369 k117 transistor transistor k364 transistor K246 K30ATM k117 equivalent K363 transistor k246 transistor
Contextual Info: 10-1 Small Signal Transistors Mini-Package Type •c (m A ) f j T Y P . (M IN ) V C E (sat) M A X . hFE PC (mW) CCE IV ) >C im A ) ‘c IV ) im A ) !8 Im A ) (M Hz) V CE (V ) !C Im A ) 2SA 1048 2 SC 2 4 5 8 50 150 200 70 ~ 4 0 0 /7 00 6 2 0 .3 /0 .2 5 100

sat 1205

Abstract: 100w stereo class b amplifier with tone controls 100w car amplifier car woofer amplifier circuit diagram 15W stereo amplifiers with tone controls circuits 100w audio amplifier circuit diagram class D HZIP11 10w stereo class d amplifier with tone controls bass treble control circuit for woofer 100 100w stereo amplifier
Contextual Info: UTC 1205 LINEAR INTEGRATED CIRCUIT 20W BRIDGE AMPLIFIER FOR CAR RADIO DESCRIPTION The UTC 1205 is class B dual audio power amplifier, have designed for car radio application. HZIP-11 FEATURES * High output power: Po=10+10W@RL=2Ω, d=10% Po=20W@RL=4Ω, d=1%

Contextual Info: File Number RCA6340, RCA6341 1205 HA RR IS S E M I C O N D S E C T O R SbE ]> • 43 02 57 1 0 0 4 0 ^ 0 2 TOI H H A S 25-A Silicon N-P-N Power Transistors -7 ^ 5 - - jq N-P-N Types for Power Supplies and Other High Voltage Switching Applications Features:

RCA6340

Abstract: 30367 sat 1205 180C 2N6340 2N6341 RCA6341
Contextual Info: 3875081 G E SOLID STA lfÔ Ï High-Voltage Power Transistors DE l 3 a 7 S D f l l D DÏ7E1E fi JT _ 5 _ 5 _ I_ RCA6340, RCA6341 File Number 1205 25-A Silicon N-P-N Power Transistors

2482 npn

Abstract: TE 2482
Contextual Info: File N um ber RCA6340, RCA6341 1205 25-A Silicon N-P-N Power Transistors N-P-N Types for Power Supplies and Other High Voltage Switching Applications Features: • F a s t s w itc h in g s p e e d m L o w Vce saf ■ S te e l h e r m e tic T O -2Û 4 A A p a c k a g e

sat 1205

Abstract: 1205 UPIA1205-6R8M
Contextual Info: ULTRA HIGH CURRENT SMT POWER INDUCTORS UPIA 1205 TYPE B Shape and size: Dimensions are in mm H G L Series UPIA 1205 A(max) 13.9 B(max) 13.5 C(max) 5.2 D 2.3±0.3 E By each P/N G 8.0 H 5.0 L 14.5 Features: Ordering information: ．Lowest height and DCR in this package footprint.

sat 1205

Abstract: UPIA1205-6R8M upia1205 4N34 Power Inductors SMT Power Inductors UPIA1205-4R7M UPIA1205-R56M 2N32 A1205
Contextual Info: ULTRA HIGH CURRENT SMT POWER INDUCTORS UPIA 1205 TYPE Shape and size: Dimensions are in mm Series UPIA 1205 A(max) 13.9 B(max) 13.5 C(max) 5.2 D 2.3±0.3 E By each P/N F 6.5 D1 3.1 G 8.0 H 5.0 L 14.5 Features: Ordering information: ．Lowest height and DCR in this package footprint.

2SD2159

Abstract: 2SD2421 2SB1485 2SB1333 2sd2061 2sc2021qrs 2SD2172 2sD2388 DARLINGTON RF
Contextual Info: b? > > 7 . $ / 7 ransistors / \ ’ y L i s t 4 — o f y P B i J K r o d u c t s S i - l l * f o r E a c h 2 S P A / b a c k a g / c e / d í í ( 2 S < A ~ / B f / C / D T y p e ) • SPT Part No. Application VcEO(V) lc(A) lc Max-(A) 2SA825S Low Noise