SAT 1205 Search Results

2sc4983

Contextual Info: SAHYO LOW-SATURATl ON VOLTAGE TR SERI ES Small-Signal Transistors.NO.l The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power ampl ifiers, electrical equipment.

Contextual Info: 1726-1205 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1711-1205 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1717-1205 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1716-1205 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1714-1205 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1713-1205 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)115 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1718-1205 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: SILICON N CHANNEL MOS TYPE -GT20G102ÍSM STROBE FLASH APPLICATIONS Unit in ram 1 0 .3 MAX . High Input Impedance . Low Saturation Voltage : V ç e sat)= 8V(Max.) (Ic=130A) . Enhancenent-Mode . 12V Gate Drive riAxinun ratings (Ta-25° o SYMBOL CHARACTERISTIC

THINKI transistor catalog

Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Contextual Info: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003

2N5089 equivalent

Abstract: D39C4 GES5307 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device V C E sat E b v C EO Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300

2SB1205

Abstract: 2SD1801
Contextual Info: SAfiYO L O W - S A T U R A T IO N V O L T A G E TR S E R I E S Small-Signal Transistors.NO. 1 The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power amplifiers, electrical equipment.

transistor k117

Abstract: transistor k363 K369 k117 transistor transistor k364 transistor K246 K30ATM k117 equivalent K363 transistor k246 transistor
Contextual Info: 10-1 Small Signal Transistors Mini-Package Type •c (m A ) f j T Y P . (M IN ) V C E (sat) M A X . hFE PC (mW) CCE IV ) >C im A ) ‘c IV ) im A ) !8 Im A ) (M Hz) V CE (V ) !C Im A ) 2SA 1048 2 SC 2 4 5 8 50 150 200 70 ~ 4 0 0 /7 00 6 2 0 .3 /0 .2 5 100

sat 1205

Abstract: 100w stereo class b amplifier with tone controls 100w car amplifier car woofer amplifier circuit diagram 15W stereo amplifiers with tone controls circuits 100w audio amplifier circuit diagram class D HZIP11 10w stereo class d amplifier with tone controls bass treble control circuit for woofer 100 100w stereo amplifier
Contextual Info: UTC 1205 LINEAR INTEGRATED CIRCUIT 20W BRIDGE AMPLIFIER FOR CAR RADIO DESCRIPTION The UTC 1205 is class B dual audio power amplifier, have designed for car radio application. HZIP-11 FEATURES * High output power: Po=10+10W@RL=2Ω, d=10% Po=20W@RL=4Ω, d=1%

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

UTC TDA2005L

Abstract: TDA2005 BRIDGE AMPLIFIER tda2005l tda2005 woofer amplifier diagram tda 2005 tda 100w tda 2200 100w car amplifier Tda2005l circuit diagram TDA2005
Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD TDA2005 LINEAR INTEGRATED CIRCUIT 20W BRIDGE AMPLIFIER FOR CAR RADIO DESCRIPTION The UTC TDA2005 is class B dual audio power amplifier, have designed for car radio application. HZIP-11 FEATURES * High output power: POUT=10+10W@RL=2Ω, THD=10%

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in_ mm MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Cuilt-in Free Wheeling Diodes. . High DC Current Gain

5252 F 1006

Abstract: 40r6 NF 846 RFT service-mitteilungen "service-mitteilungen" vqe 21 RFT Servicemitteilungen servicemitteilungen service-mitteilungen 5252 f 1201
Contextual Info: SERVICE-MITTEILUNGEN 12-15 Iradio - television VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND F E R N S E H E N Ausgabe Seite S e p t. 88 1- 3 16 M itte ilu n g aus dem VEB S te r n -B a d io B e r l in , K u n d en d ien st Laufw erk MU 3oo S-DB - S e r v ic e v a r ia n te n

kb8441

Contextual Info: PHOTOCOUPLER KB8441 GENERAL PURPOSE HIGH ISOLATION VOLTAGE HIGH SENSITIVITY PHOTOCOUPLER SERIES FEATURES 1. AC Input. 2. High current transfer ratio. CTR:Min 600%,at IF =±1mA ,VCE =2V 3. High isolation voltage between input and output (Viso=5000 Vrms) 4. Compact dual-in-line package

KB8241

Contextual Info: PHOTOCOUPLER KB8241 GENERAL PURPOSE HIGH ISOLATION VOLTAGE HIGH SENSITIVITY PHOTOCOUPLER SERIES FEATURES 1. AC Input. 2. High current transfer ratio. CTR:Min 600%,at IF =±1mA ,VCE =2V 3. High isolation voltage between input and output (Viso=5000 Vrms) 4. Compact dual-in-line package

KB8241

Contextual Info: PHOTOCOUPLER KB8241 GENERAL PURPOSE HIGH ISOLATION VOLTAGE HIGH SENSITIVITY PHOTOCOUPLER SERIES FEATURES 1. AC Input. 2. High current transfer ratio. CTR:Min 600%,at IF =±1mA ,VCE =2V 3. High isolation voltage between input and output (Viso=5000 Vrms) 4. Compact dual-in-line package

KB8341

Contextual Info: PHOTOCOUPLER KB8341 GENERAL PURPOSE HIGH ISOLATION VOLTAGE HIGH SENSITIVITY PHOTOCOUPLER SERIES FEATURES 1. AC Input. 2. High current transfer ratio. CTR:Min 600%,at IF =±1mA ,VCE =2V 3. High isolation voltage between input and output (Viso=5000 Vrms) 4. Compact dual-in-line package

KB8141

Contextual Info: PHOTOCOUPLER KB8141 GENERAL PURPOSE HIGH ISOLATION VOLTAGE HIGH SENSITIVITY PHOTOCOUPLER SERIES FEATURES 1. AC Input. 2. High current transfer ratio. CTR:Min 600%,at IF =±1mA ,VCE =2V 3. High isolation voltage between input and output (Viso=5000 Vrms) 4. Compact dual-in-line package

KB8341

Contextual Info: PHOTOCOUPLER KB8341 GENERAL PURPOSE HIGH ISOLATION VOLTAGE HIGH SENSITIVITY PHOTOCOUPLER SERIES FEATURES 1. AC Input. 2. High current transfer ratio. CTR:Min 600%,at IF =±1mA ,VCE =2V 3. High isolation voltage between input and output (Viso=5000 Vrms) 4. Compact dual-in-line package