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    SAMSUNG AP Search Results

    SAMSUNG AP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Samsung Samsung Secret Secret SAMSUNG QDRII+/DDRII+ 16Mb C-die Specification Change Notice July, 2008 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng.


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    K7K1636T2C K7K1618T2C 512Kx36 K7S1636T4C K7S1618T4C 1Mx18 11x15 PDF

    Flex-OneNAND Samsung

    Abstract: OneNAND samsung note 3 samsung onenand Flex-OneNAND SAMSUNG SEMICONDUCTOR flexonenand PMIC OneNAND reader
    Contextual Info: OneNAND Data Protection Application Note Version 1.0, Apr-2009 Samsung Electronics Copyright ⓒ 2009 Samsung Electronics Co.,LTD. Copyright 2009 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung


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    Apr-2009 Flex-OneNAND Samsung OneNAND samsung note 3 samsung onenand Flex-OneNAND SAMSUNG SEMICONDUCTOR flexonenand PMIC OneNAND reader PDF

    K8S2815ET

    Abstract: samsung nor flash 128M-BIT 0x55H K8S6415ET K8F1215E 0x555 128-MBIT
    Contextual Info: Synchronous burst mode register setting for NOR Application Note Version 1.0, May-2009 Samsung Electronics Copyright ⓒ 2006 Samsung Electronics Co.,LTD. Copyright 2004 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung


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    May-2009 UINT16; UINT16 0x555 512Mbit, K8S2815ET samsung nor flash 128M-BIT 0x55H K8S6415ET K8F1215E 0x555 128-MBIT PDF

    mlc nand flash lsb msb

    Abstract: samsung MLC nand flashes SAMSUNG NAND FLASH Samsung MLC samsung MLC flash SAMSUNG NAND Flash MLC Samsung Nand Samsung nand MLC Samsung Electronics. NAND flash memory Samsung Flash Datasheet
    Contextual Info: SEC-MFAEG-NAND-AN Page Program Addressing For MLC NAND Application Note Version 0.2, Nov-2009 Samsung Electronics Copyright ⓒ 2009 Samsung Electronics Co.,LTD. Copyright 2009 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung


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    Nov-2009 mlc nand flash lsb msb samsung MLC nand flashes SAMSUNG NAND FLASH Samsung MLC samsung MLC flash SAMSUNG NAND Flash MLC Samsung Nand Samsung nand MLC Samsung Electronics. NAND flash memory Samsung Flash Datasheet PDF

    UtRAM

    Abstract: specification of Logic Analyzer
    Contextual Info: SEC-Mobile-UtRAM UtRAM and UtRAM2’s Frequently violated parameters Application Note Version 1.0, April 2009 Samsung Electronics Copyright ⓒ 2009 Samsung Electronics Co.,LTD. Copyright 2009 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung


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    lpddr2 pcb design

    Abstract: lpddr2 samsung lpddr2 lpddr2 datasheet LPDDR2 SDRAM samsung samsung* lpddr2 lpddr2 samsung lp-ddr2 Datasheet LPDDR2 SDRAM "read channel" Samsung
    Contextual Info: SEC-Mobile-UtRAM Application Note for General PCB Design Guidelines for Mobile DRAM Version 1.0, May 2009 Samsung Electronics Copyright ⓒ 2009 Samsung Electronics Co., LTD. Copyright 2009 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung


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    40ohm 800Mbps 48ohm lpddr2 pcb design lpddr2 samsung lpddr2 lpddr2 datasheet LPDDR2 SDRAM samsung samsung* lpddr2 lpddr2 samsung lp-ddr2 Datasheet LPDDR2 SDRAM "read channel" Samsung PDF

    Contextual Info: SAMSUNG SEMICONDUCTOR: AN OVERVIEW Samsung Semiconductor is a unit of the Samsung Group, a worldwide, Korean-based chaebol conglomer­ ate of 34 companies that enjoyed sales of $48 billion in 1992. Sales of Samsung Electronics Co., Ltd., of which Samsung Semiconductor is a division, were more than


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    SAMSUNG GDDR4

    Abstract: GDDR4 K4D263238 84 FBGA GDDR K4J52324Q SAMSUNG GDDR3 gddr3 graphics card SAMSUNG SEMICONDUCTOR
    Contextual Info: Samsung High-Performance GDDR4 Graphics Memory Faster, Denser Memory for Advanced 3D Graphics Requirements Samsung’s GDDR4  is next-generation, Three-dimensional graphics applications require advanced memory with exceptional performance. Samsung’s GDDR4 memory delivers an ultra-fast


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    512Mb 4Mx32 K4D263238 8Mx16 K4D261638 128Mb DS-07-GDRAM-001 SAMSUNG GDDR4 GDDR4 K4D263238 84 FBGA GDDR K4J52324Q SAMSUNG GDDR3 gddr3 graphics card SAMSUNG SEMICONDUCTOR PDF

    gddr3

    Abstract: SAMSUNG LAPTOP SAMSUNG GDDR4 K4D263238 84 FBGA K4D55323 K4J52324Q samsung K4D261638 84FBGA
    Contextual Info: Samsung HighPerformance 512Mb GDDR3 Graphics Memory Samsung’s GDDR3  is next-generation, JEDEC-standard graphics memory for the most advanced 3D applications. Faster, Denser Memory for Advanced 3D Graphics Requirements Samsung graphics memory has played an important


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    512Mb 200Mhz 128Mb 8Mx16 K4D261638F-TC5A DS-06-GDRAM-001 gddr3 SAMSUNG LAPTOP SAMSUNG GDDR4 K4D263238 84 FBGA K4D55323 K4J52324Q samsung K4D261638 84FBGA PDF

    SEMCO

    Contextual Info: 2008. 05. 22 DATE OF ISSUE : SPECIFICATION MODEL : SLHNNWH531T0 HIGH POWER LED - SUNNIX CUSTOMER : SAMSUNG ELECTRO-MECHANICS DRAWN CHECKED APPROVED SAMSUNG ELECTRO-MECHANICS DRAWN CHCKED Sales CHECKED(Quality) APPROVED SAMSUNG ELECTRO-MECHANICS CO,.LTD. 314, MAETAN3-DONG, YEONGTONG-GU,


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    SLHNNWH531T0 24hours SLHNNWH531T0S0QRC5) SEMCO PDF

    S3F84K4

    Abstract: A V454 020 c 4235 transistor npn lm7805 regulator battery charger on LM358 V418 diode schematic diagram samsung led LP-0520 microcontroller based li-ion battery charger V478
    Contextual Info: APPLICATION NOTE S3F84K4 LI-ION BATTERY CHARGER December, 2008 REV 1.00 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2008 Samsung Electronics, Inc. All Rights Reserved Trademark & Copyright Information Copyright © 2008 Samsung Electronics Co., Ltd. All Rights Reserved.


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    S3F84K4 S3F84K4 A V454 020 c 4235 transistor npn lm7805 regulator battery charger on LM358 V418 diode schematic diagram samsung led LP-0520 microcontroller based li-ion battery charger V478 PDF

    74lvc3245

    Abstract: SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL
    Contextual Info: Confidential SAMSUNG NAND FLASH APPLICATION NOTE Software Driver of SmartMedia TM (Ver 3.0) MEMORY PRODUCT & TECHNOLOGY SAMSUNG ELECTRONICS Co., LTD 1 ELECTRONICS Confidential SAMSUNG NAND FLASH Revision History Revision Date Name 1.0 1.1 2.0 98/12/10 99/03/04


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    128MB 0000h 0001h 0002h 12bit 16bit 74lvc3245 SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL PDF

    HD49748NT

    Abstract: 00-GY HD49748 Samsung vk 1261 samsung capstan motor
    Contextual Info: ¡HD 49748 NT Ukiad scalony duzej skali integracji HD 49748 NT jest procesorem servo ^astosowanym w magnetowidach SAMSUNG SE 9000, SAMSUNG VD |R225, SAMSUNG VK 1260, SAMSUNG VK 1261, SAMSUNG VK 8220 i pothodnych. Sterowany jest z ukladu ¡iPD 75216 PAL system control, nadzorujje í steruje obrotami silników trójfazowych w blokach capstan motor i drum


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    single mode optical fiber 1550 nm

    Abstract: Telcordia GR-20-CORE optical fiber cable G.652 GR-20-CORE samsung ribbon samsung ribbon vs Samsung tube tv G.652 samsung IEC793 Fiber low chromatic dispersion
    Contextual Info: Samsung Electronics Fiberoptics products Single Mode Optical Fiber SAMSUNG Single Mode optical fiber is d esigned and manufactured with a matched cladding, step index profile, using Samsung’s advanced MCVD process. This design provides versatile in applications for long haul, regional and


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    1130E, 1-877-ssoptic/1-877-776-7842 single mode optical fiber 1550 nm Telcordia GR-20-CORE optical fiber cable G.652 GR-20-CORE samsung ribbon samsung ribbon vs Samsung tube tv G.652 samsung IEC793 Fiber low chromatic dispersion PDF

    Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N: RC2012G*CS • Product : Thick - Film chip RESISTOR • Description : 2012, ±2%, 1Ω~1㏁ , 1/8W A. Samsung Part Number RC 2012 G * CS ① ③ ④ ⑤ ② ① Code designation Samsung Thick - Film Chip Resistor


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    RC2012G* 10seconds 100cycles, /30min 125/30min 000hours 90min 30min PDF

    Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N: RC3216G*CS • Product : Thick - Film chip RESISTOR • Description : 3216, ±2%, 1Ω~1㏁ , 1/4W A. Samsung Part Number RC 3216 G * CS ① ③ ④ ⑤ ② ① Code designation Samsung Thick - Film Chip Resistor


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    RC3216G* 10seconds 100cycles, /30min 125/30min 000hours 90min 30min PDF

    10R1

    Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N: RC3225F*CS • Product : Thick - Film chip RESISTOR • Description : 3225, ±1%, 1Ω~1㏁ , 1/3W A. Samsung Part Number RC 3225 F * CS ① ③ ④ ⑤ ② ① Code designation Samsung Thick - Film Chip Resistor


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    RC3225F* 10seconds 100cycles, /30min 125/30min 000hours 90min 30min 10R1 PDF

    RC3216F

    Abstract: chip resistor 3216
    Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N: RC3216F*CS • Product : Thick - Film chip RESISTOR • Description : 3216, ±1%, 1Ω~1㏁ , 1/4W A. Samsung Part Number RC 3216 F * CS ① ③ ④ ⑤ ② ① Code designation Samsung Thick - Film Chip Resistor


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    RC3216F* 10seconds 100cycles, /30min 125/30min 000hours 90min 30min RC3216F chip resistor 3216 PDF

    RESISTOR 5025

    Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N: RC5025G*CS • Product : Thick - Film chip RESISTOR • Description : 5025, ±2%, 1Ω~1㏁ , 2/3W A. Samsung Part Number RC 5025 G * CS ① ③ ④ ⑤ ② ① Code designation Samsung Thick - Film Chip Resistor


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    RC5025G* 10seconds 100cycles, /30min 125/30min 000hours 90min 30min RESISTOR 5025 PDF

    RC5025F

    Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N: RC5025F*CS • Product : Thick - Film chip RESISTOR • Description : 5025, ±1%, 1Ω~1㏁ , 2/3W A. Samsung Part Number RC 5025 F * CS ① ③ ④ ⑤ ② ① Code designation Samsung Thick - Film Chip Resistor


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    RC5025F* 10seconds 100cycles, /30min 125/30min 000hours 90min 30min RC5025F PDF

    Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N: RC6432G*CS • Product : Thick - Film chip RESISTOR • Description : 6432, ±2%, 1Ω~1㏁ , 1W A. Samsung Part Number RC 6432 G * CS ① ③ ④ ⑤ ② ① Code designation Samsung Thick - Film Chip Resistor


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    RC6432G* 10seconds 100cycles, /30min 125/30min 000hours 90min 30min PDF

    resistor 6432

    Abstract: samsung 6432
    Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N: RC6432J*CS • Product : Thick - Film chip RESISTOR • Description : 6432, ±5%, 1Ω~10㏁ , 1W A. Samsung Part Number RC 6432 J * CS ① ③ ④ ⑤ ② ① Code designation Samsung Thick - Film Chip Resistor


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    RC6432J* 10seconds 100cycles, /30min 125/30min 000hours 90min 30min resistor 6432 samsung 6432 PDF

    RC6432F

    Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N: RC6432F*CS • Product : Thick - Film chip RESISTOR • Description : 6432, ±1%, 1Ω~1㏁ , 1W A. Samsung Part Number RC 6432 F * CS ① ③ ④ ⑤ ② ① Code designation Samsung Thick - Film Chip Resistor


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    RC6432F* 10seconds 100cycles, /30min 125/30min 000hours 90min 30min RC6432F PDF

    Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics • Samsung P/N: RC3225G*CS • Product : Thick - Film chip RESISTOR • Description : 3225, ±2%, 1Ω~1㏁ , 1/3W A. Samsung Part Number RC 3225 G * CS ① ③ ④ ⑤ ② ① Code designation Samsung Thick - Film Chip Resistor


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    RC3225G* 10seconds 100cycles, /30min 125/30min 000hours 90min 30min PDF