SA261 Search Results

SA265

Abstract: SA264 DO-213AB SA261 SA262 SA263
Contextual Info: SA261 . SA265 SA261 . SA265 Fast Switching Surface Mount Si-Rectifiers Schnelle Si-Gleichrichter für die Oberflächenmontage Version 2005-06-21 Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 0.5 50.1000 V

Contextual Info: SA261 . SA265 SA261 . SA265 Fast Switching Surface Mount Si-Rectifiers Schnelle Si-Gleichrichter für die Oberflächenmontage Version 2005-10-17 2A 0.5 Repetitive peak reverse voltage Periodische Spitzensperrspannung 1200.2000 V Plastic case MELF Kunststoffgehäuse MELF

DO-213AB

Abstract: SA261 SA262 SA263 SA264 SA265
Contextual Info: SA261 . SA265 SA261 . SA265 Fast Switching Surface Mount Silicon Rectifier Diodes Schnelle Silizium-Gleichrichter für die Oberflächenmontage Version 2010-04-13 Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung

Contextual Info: SA261 . SA265 SA261 . SA265 Fast Switching Surface Mount Silicon Rectifier Diodes Schnelle Silizium-Gleichrichter für die Oberflächenmontage Version 2012-04-02 Nominal current – Nennstrom 2A 2.5 Repetitive peak reverse voltage Periodische Spitzensperrspannung

DO-213AB

Abstract: SA261 SA262 SA263 SA264 SA265
Contextual Info: SA261 . SA265 SA261 . SA265 Fast Switching Surface Mount Si-Rectifiers Schnelle Si-Gleichrichter für die Oberflächenmontage Version 2008-04-08 Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 0.5 50.1000 V

SA265

Contextual Info: SA261 . SA265 SA261 . SA265 Fast Switching Surface Mount Si-Rectifiers Schnelle Si-Gleichrichter für die Oberflächenmontage Version 2010-04-13 Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 0.5 1200.2000 V

Contextual Info: SA261 . SA265 SA261 . SA265 Fast Switching Surface Mount Si-Rectifiers Schnelle Si-Gleichrichter für die Oberflächenmontage Version 2005-06-29 2A 0.5 Repetitive peak reverse voltage Periodische Spitzensperrspannung 1200.2000 V Plastic case MELF Kunststoffgehäuse MELF

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

SA-275

Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
Contextual Info: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document

71WS256NC0BAIAU

Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics

AM29DL640H

Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
Contextual Info: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

A039h

Abstract: 3A400
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.

SA452

Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this

S29WS256N

Abstract: S71WS512NE0BFWZZ
Contextual Info: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip

TSOP-20 FOOTPRINT

Abstract: tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL S29PL-J
Contextual Info: S29PL-J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion

10001000XXX

Abstract: PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166
Contextual Info: White Electronic Designs W78M32V-XBX 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operation Multi-Chip Package FEATURES Access Times of 70, 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing

SA158

Abstract: SA214 8adrr
Contextual Info: 63/+63/+ for Multi-Chip Products MCP  0HJDELW  0 [ %LW &026  9ROWRQO\ 6LPXOWDQHRXV 5HDG:ULWH 3DJH 0RGH )ODVK 0HPRU\ Datasheet PRELIMINARY Distinctive Characteristics ² $À6łt…h€r…h†rÃpˆ……r‡ ² ×6ǒƒvphyƇhqi’À‚qrÃpˆ……r‡

10001XXXXX

Contextual Info: S29PL-J 128/128/64/32 Megabit 8/8/4/2M x 16-Bit CMOS 3.0 Volt-Only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

WiMAX RF CMOS Transceiver

Abstract: SA2614 C18-C20
Contextual Info: SA2614 SA2614Parallel Controlled Digital Step Attenuator 50MHz to 4000MHz, 6Bit, 0.5dB LSB PARALLEL CONTROLLED DIGITAL STEP ATTENUATOR 50MHz TO 4000MHz, 6-BIT, 0.5dB N/C 1 Vcc 2 N/C 3 6 Bits, 31.5dB Range, 0.5dB Step RF1 4  High Linearity, IIP3 >49dBm

rfsa2614

Abstract: C18-C20 trace code decoder RFMD
Contextual Info: SA2614 SA2614Parallel Controlled Digital Step Attenuator 504000MHz, 6Bit, 0.5dB LSB PARALLEL CONTROLLED DIGITAL STEP ATTENUATOR 50-4000MHz, 6-BIT, 0.5dB LSB  3V and 5V Logic Compatible  On-chip Parallel Decoder  Parallel Programming Interface

Contextual Info: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM PRELIMINARY Distinctive Characteristics MCP Features „ „ Power supply voltage of 1.7 to 1.95V

Spansion S29GL512N11

Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages

SGA23

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.3E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.

asme SA388

Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Contextual Info: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ