SA192 Search Results

phase shifter dc to 100mhz

Abstract: 117Q high frequency mixer IR LF 0038 LQFP48 SA1920
Contextual Info: Philips Semiconductors Product specification Dual-band RF front-end SA1920 DESCRIPTION FEATURES The SA1920 is an integrated dual-band RF front-end that operates at both cellular AMPS, GSM and TDMA and PCS/DCS (TDM A and GSM) frequencies, and is designed in a 13 GHz f j BiCMOS

Contextual Info: INTEGRATED CIRCUITS SA1920 Dual-band RF front-end Product specification Supersedes data of 1997 Aug 01 IC17 Data Handbook Philips Semiconductors 1998 Apr 07 PHILIPS Philips Semiconductors Product specification Dual-band RF front-end SA1920 DESCRIPTION FEATURES

i1695

Abstract: LQFP48 SA1920 SR01616
Contextual Info: INTEGRATED CIRCUITS SA1920 Dual-band RF front-end Product specification Supersedes data of 1998 Apr 07 IC17 Data Handbook Philips Semiconductors 1999 Mar 02 Philips Semiconductors Product specification Dual-band RF front-end SA1920 DESCRIPTION FEATURES • Low current consumption

LQFP48

Abstract: SA1920
Contextual Info: Philips Sem iconductors Prelim inary specification PCS/Cellular d ua l-ba nd RF fro n t-e n d DESCRIPTION SA1920 The circuits for both bands shall be separated i.e., unique RF inputs, LNAs, in te r-sta ge filters, mixers, and IF amplifiers with common control circuitry. The SA1920 has six dedicated control

LQFP48

Abstract: SA1921
Contextual Info: INTEGRATED CIRCUITS SA1921 Satellite/Cellular dual–band RF front–end Preliminary specification Philips Semiconductors 1997 Aug 01 Philips Semiconductors Preliminary specification Satellite/Cellular dual–band RF front–end SA1921 common control circuitry. The SA1921 has six dedicated control

LOFP48

Abstract: 7x7x1.4 PHILIPS GSM I Q
Contextual Info: Philips Semiconductors Preliminary specification Satellite/Cellular dual-band RF front-end DESCRIPTION The SA1921 is an integrated dual-band RF front-end circuit for cellular phones operating in the 900 MHz band and 1550 MHz band. Low Band High Band GSM 900 MHz

74375

Abstract: SR01632 phase shifter dc to 100mhz
Contextual Info: INTEGRATED CIRCUITS SA1921 Satellite and cellular dual-band RF front-end Product specification IC17 Data Handbook Philips Semiconductors 1998 Sep 11 Philips Semiconductors Product specification Satellite and cellular dual-band RF front-end DESCRIPTION SA1921

satellite received board

Abstract: 1650 1850 MHz Filter C24 06 85 Philips 336 2 x band receiver LQFP48 SA1921 05353 DUT11 1200 AP40
Contextual Info: INTEGRATED CIRCUITS SA1921 Satellite and cellular dual-band RF front-end Product specification Supersedes data of 1998 Sep 11 IC17 Data Handbook Philips Semiconductors 1999 Mar 02 Philips Semiconductors Product specification Satellite and cellular dual-band RF front-end

"Rf Front-End"

Abstract: Philips capacitor 058 117Q Cellular RF Transmitters high frequency mixer LQFP48 SA1921
Contextual Info: Philips Semiconductors Product specification Satellite and cellular dual-band RF front-end DESCRIPTION FEATURES The SA1921 is an integrated dual-band RF front-end that operates at both cellular AMPS, DAMPS, and GSM and satellite (1515-1600 MHz) frequencies, and is designed in a 13 GHz f j

7x7x1.4

Abstract: LQFP48 SA1921 frequency doubler image rejection mixer X Band
Contextual Info: Philips Sem iconductors Prelim inary specification Satellite/Cellular dual-band RF front-end DESCRIPTION SA1921 common control circuitry. The SA1921 has six dedicated control logic pins: H ig h -ba n d /L o w -b a n d Selection, Synthesizer On, Receiver On, Transm itter On, Strong Signal Indication, and

s1900

Contextual Info: Philips Semiconductors Preliminary specification PCS/Cellular dual-band RF front-end SA1920 DESCRIPTION The circuits for both bands shall be separated i.e., unique RF Inputs, LNAs, inter-stage filters, mixers, and IF amplifiers with common control circuitry. The SA1920 has six dedicated control

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

Contextual Info: S29NS-R MirrorBit Flash Family S29NS01GR, S29NS512R, S29NS256R, S29NS128R 1024/512/256/128 Mb 64/32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory S29NS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Retired Product)

SA-275

Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
Contextual Info: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document

A039h

Abstract: 3A400
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.

SA452

Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this

S29WS256N

Abstract: S71WS512NE0BFWZZ
Contextual Info: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip

Contextual Info: White Electronic Designs W78M32V-XBX ADVANCED* 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing

TSOP-20 FOOTPRINT

Abstract: tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL S29PL-J
Contextual Info: S29PL-J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion

10001000XXX

Abstract: PWA with 555 W78M32V-XBX SA139-SA142 SA175-SA178 SA187-SA190 SA163-SA166
Contextual Info: White Electronic Designs W78M32V-XBX 8Mx32 Flash 3.3V Page Mode Simultaneous Read/Write Operation Multi-Chip Package FEATURES Access Times of 70, 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing

SA158

Abstract: SA214 8adrr
Contextual Info: 63/+63/+ for Multi-Chip Products MCP  0HJDELW  0 [ %LW &026  9ROWRQO\ 6LPXOWDQHRXV 5HDG:ULWH 3DJH 0RGH )ODVK 0HPRU\ Datasheet PRELIMINARY Distinctive Characteristics ² $À6łt…h€r…h†rÃpˆ……r‡ ² ×6ǒƒvphyƇhqi’À‚qrÃpˆ……r‡

FL128P

Abstract: SPANSION FL128P
Contextual Info: S25FL128P 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet S25FL128P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,

NS064N

Abstract: S29NS128N S29NS256N VDC048 S29NS256
Contextual Info: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics „ Single 1.8 volt read, program and erase (1.70

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.2E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed