SA038 Search Results

SA038WA-008

Contextual Info: Surface Acoustic Wave Filter TOKO No. SA038WA-008 98/07/23 1. Overall Dimensions 2.54 JAPAN 2.0MAX 1.5 0.8 TOKO Lot No. 6.50 Unit : mm 5 4 6 7 Input : 11 3 8 Output : 5 2 9 Return : 12 13.3 Part No. Ground : 1, 2, 3, 4 1 10 12 11 Orientation mark Return : 6

71WS256NC0BAIAU

Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics

Contextual Info: Oavantek MSA-0386 MOD A M P C ascadable S ilic o n B ip o la r M o n o lith ic M icrow ave Integrated C irc u it A m p lifie rs Avantek 86 Plastic Package Features • Cascadable 50 Cl Gain Block • 3 dB Bandwidth: DC to 2.4 GHz • 12.0 dB typical Gain at 1.0 GHz

MSH 11

Abstract: 37.5 GHz SCHOTTKY DIODE
Contextual Info: MSH108C HEMT Schottky Diode Mixer GaAs Telecom Products Features • RF frequency: 35 to 40 GHz • Conversion loss: 6 dB • Functions as upconverter and downconverter • Singly balanced mixer topology Description and Applications The MSH108C is a monolithic HEMi scnottKy diode, smgiy-Daianced mixer designed tor use in com­

TH11-4H104FT

Abstract: g920at24U NQ82910GML max1532a SW TACT SPST 5P FW82801FB UL C527 TH11-4h TH11-4H104F SKUL30-02AT-G
Contextual Info: Material List by Single-Item/Multi-Level - All -Date : 05/17/2005 Time : 17:29:04 Drawing No: 451344 Plant: CN30 Revision: E Report by UID: 9141332

SA047

Contextual Info: S29WS-N MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet PRELIMINARY General Description The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst

S71WS512ND0BFWEP

Abstract: LZ 48H 526 71WS512ND0BFWEP BAX55 S71WS512 71WS512ND
Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CELLULAR RAM ADVANCE INFORMATION Datasheet Distinctive Characteristics

TRANSISTOR BFW 11

Abstract: S29WS-N transisTOR C124 064N S29WS064N S29WS128N S29WS256N WS064 SA047-SA050
Contextual Info: ADVANCE INFORMATION S29WS-N MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet Notice to Readers: The Advance Information status indicates that this

SA047

Contextual Info: S29WS064R 64 Megabit 4M x 16-bit , CMOS 1.8 Volt-Only Simultaneous Read/Write, Burst-mode MirrorBit Flash Memory Data Sheet (Advance Information) S29WS064R Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

BAX55

Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-Chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) pSRAM ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications

KB910Q

Abstract: FW82801FBM KB910Q B4 SP093MX0000 FBM-L11-160808-800LMT ML1220T10 FBM-L11-201209-221LMAT BUF C752 D970K NQ82915GM
Contextual Info: Material List by Single-Item/Multi-Level - All -Date : 03/22/2005 Time : 11:33:04 Drawing No: 451336 Plant: CN30 Revision: K Report by UID: 8745064

TVB230-050

Abstract: PolySwitch Resettable Fuse
Contextual Info: SiBar Thyristor Surge Protectors New thyristor products for overvoltage protection SiBar thyristor surge protectors provide transient voltage protection for telecommunications applications Raychem introduces its new line of thyristor surge protectors designed to protect sensitive

TCMS

Abstract: S29WS-N S72WS256ND0 S72WS256NDE S72WS256NEE 225 J 250 AVA CL 20 JEP95
Contextual Info: S72WS256N Based MCPs 256/512 Megabit 16M/32M x 16-bit CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Split Bus ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications

TCMS

Abstract: TRANSISTOR BFW 11 pin diagram S73WS256N marking code qa1 148
Contextual Info: S73WS256N Based MCPs Stacked Multi-Chip Product MCP 512/256 Megabit (32M/16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Shared Data Bus ADVANCE INFORMATION

ALH244C

Abstract: 9701455-S-J1 cu 3842 TRW 1407 Ka-band
Contextual Info: ALH244C Ka-Band HEMT Low-Noise Amplifier GaAs Telecom Products Features • RF frequency: 24 to 41 GHz • Linear gain: 12 dB • NF: 4 dB • Unconditionally stable • Balanced design provides excellent input and output VS WR • Biasable from either side of chip

SA210WA-001

Abstract: SA038WA-008
Contextual Info: For Others Applications mm •fc-fcSiS» mxm* mm Applica­ tion TOKO Part Number Center Freq. Fo MHz Bandwidth (kHz) Insertion Loss Fo (dB) Attenuation (dB) Group delay DECT SA240WA-001 240.192 Fo ± 650 min. at 3dB 9.0 max. 15.0 min. (Fo :7.1.728MHz) 0.35 max. (Fo± 650kHz)

SA038WA-008

Abstract: SA210WA-001 SA200HS-004 sa240wa001
Contextual Info: TYPE SA MH l O W O STANDARD PART NUM BER LIST ELECTRICAL CHARACTERISTICS TA = 25°C. Detailed specifications for each p/n are available from ^oko. TYPESA WIDE BAND IF FILTERS Typical Applications CDMA Bandwidth Canter 3d8 Frequency (kHzmin) (MHz) TOKO Part

S29WS128N

Abstract: sample code read and write flash memory spansion S29WS064N S29WS256N S29WS-N S70WS512N00 TSB084 sample code write buffer spansion SA047-SA050
Contextual Info: S70WS512N00 Based MCPs Same-Die Stacked Multi-Chip Product MCP 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications

S29WS064R

Abstract: SA053 sa029 spansion top marking WS064R SA057 sa086 SA056 SA027
Contextual Info: S29WS064R 64 Megabit 4M x 16-bit , CMOS 1.8 Volt-Only Simultaneous Read/Write, Burst-mode MirrorBit Flash Memory Data Sheet (Advance Information) S29WS064R Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-Chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Megabit (8M x 16-Bit) pSRAM Type 4 ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications

71WS512ND

Abstract: 4136P
Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Megabit (8M x 16-Bit) pSRAM Type 4 ADVANCE INFORMATION Distinctive Characteristics

transistor c124 esn

Abstract: TLC 555 pin diagram of TRANSISTOR BFW 11
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet PRELIMINARY General Description The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst

TRANSISTOR BFW 11 pin diagram

Abstract: 064N S29WS064N S29WS128N S29WS256N WS128N pin diagram of TRANSISTOR BFW 11
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet PRELIMINARY General Description The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst

Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-Chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications