SA-2A DIODE Search Results

SA diode

Abstract: SA-2A diode
Contextual Info: SA 2A . SA 2M /4 Surface mount diode Standard Avalanche Diodes SA 2A . SA 2M Forward Current: 2 A Reverse Voltage: 50 to 1000 V Features                    !"#$ Mechanical Data       %& ' $*"+

Contextual Info: SA 2A . SA 2M /4 Surface mount diode Standard Avalanche Diodes SA 2A . SA 2M Forward Current: 2 A Reverse Voltage: 50 to 1000 V Features                    !"#$ Mechanical Data       %& ' $*"+

SA-2A diode

Contextual Info: SA 2A . SA 2M /4 Surface mount diode Standard Avalanche Diodes SA 2A . SA 2M Forward Current: 2 A Reverse Voltage: 50 to 1000 V Features                    !"#$ Mechanical Data       %& ' $*"+

Contextual Info: Ordering number:EN4443A SB20W05T No.4443A Schottky Barrier Diode Twin Type • Cathode Common SAÜYO i 50V, 2A Rectifier A pplications •High frequency rectification (switching regulators, converters and choppers). F e a tu re s • Low forward voltage (Vp max = 0.55V).

n539

Abstract: 6A10 DIODE diode 2a05 FRI57 diode 6A10 Diode IN5398 N4003 diode k5 10-16 diode 1n5392 N5398
Contextual Info: DIODE RECTIFIERS GENERAL PURPOSE /1A • 1.SA • 2A • 3A • 8A MAXIMUN Peak Reverse Voltage PRV Max Avg Rect Current @ Half-Wave Res Load 60Hz L @Ta 1N4001 1N4002 ÌN4003 1N4004 1N4005 1N400Ó 1N4007 50 100 200 400 600 800 1000 10 1.0 1.0 Ì0 1.0 1.0

Contextual Info: O rde rin g n u m b e r :EN 1933B SB20-05H N0.1933B Schottky B arrier Diode Twin Type • Cathode Common SAÊYO i 50V, 2A Rectifier A pplications • High frequency rectification (switching regulators, converters, choppers). F e a tu re s •Low forward voltage (Vp max = 0.55V).

ecg5322

Abstract: ECG5326 ECG5344 ECG5324 ECG5313 ECG5342 ECG168 z43 diode ECG5330 ECG5328
Contextual Info: PH ILIPS E C G IN C B r id g e S4E D bbsa^sa 000720Û tsb h ec g R e c t i f i e r s silicon Single-Phase Pe ak Reverse Voltage (P R V Volts) |Q, A ve rage Rectified Forw ard Current (Am ps) 1A 100 1.5 A 2A 4A ECG166 200 ECG167 400 600 ECG5332 800 ECG5309

MAX724ECK T

Contextual Info: 1 9 - 0 1 0 7 ; R e v 1; 4 / 9 3 JV W Y X A JV \ SA/2A Step-D ow n, PWM, S w itch •M ode DC-DC R egulators These regulators have excellent dynamic and transient response characteristics, while featuring cycle-by-cycle cur­ rent limiting to protect against overcurrent faults and shortcircuit output faults. The MAX724/MAX726 also have a

FMLG12

Abstract: rb60 RECTIFIER RB40 EU2A SANKEN EU2 RH2F CTB34 sanken s-100 78/rb60 RECTIFIER
Contextual Info: 7^0741 3SE » SA NK EN E L E C T R I C CO LTD QOOGflOS ü E S A K J 7 2 0 3 -OI eVrm: 100~ 1500V E lo:0.5~ l . 2A Fast Recovery Diodes RH/ES/RS/RH/RU/EU io A V rm (V) Ti CC) 5 0 H z H a lf S in e W ave S in g l e P uts T yp e N o \ 250 RH 1 450 400 RH 1A

IC 314

Contextual Info: ng n u m b e r : E N 2 1 1 6 B I SA%YO N 0. 2 1 1 6 B 2SD1806 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications . Relay control, motor control, switching Features . Low saturation voltage . On-chip diode between collector and emitter

diode BY 399

Abstract: MARKING SA DIODE BY 399 M 10 diode
Contextual Info: DSB 1 I 40 SA advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Marking on product DSB 1 I 40 SA (S1FB) 40 V 1A 0.40 V Features / Advantages: Applications: Package: ● Very low Vf

SA-100V

Abstract: diode avalanche DSA MARKING SA DIODE
Contextual Info: DSA 1 I 100 SA advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Marking on product DSA 1 I 100 SA (S1KA) 100 V 1A 0.65 V Features / Advantages: Applications: Package: ● Very low Vf

0615

Abstract: diode BY 399 BY 399 M 10 diode w sa diode MARKING SA DIODE
Contextual Info: DSB 1 I 60 SA advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Marking on product DSB 1 I 60 SA (S1HB) 60 V 1A 0.50 V Features / Advantages: Applications: Package: ● Very low Vf

silico transistor

Abstract: GE522
Contextual Info: KSH112 NPN SILICON DARLINGTON TRAN SISTO R D-PACK FOR SU R F A C E MOUNT APPLICATIONS D-PAK • High D C Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications No Suffix . Straight Lead (I. PACK, * - 1“ Suffix) • Electrically Similar to Popular TIP112

Contextual Info: www.fairchildsemi.com KA7405D 2-Channel DC Motor Driver Features Description • Output current up to 1.5A Each channel . • 4-function modes (CW, CCW, stop and brake) are controlled by 2-logic circuits. • Operating voltage range: VCC = 2.5 to 6.0V. • Built-in spike arrester diode.

Contextual Info: SA N Y O SEMICONDUCTOR ÎEE D | CORP 7 c]'ï7Q7\n □Q0513Q 2SD1649 • 2039 N P N Triple D iffu sed P la n a r S ilic o n T ra n sisto r Color TV Horizontal Deflection Output Applicationsfwith Damper Diode 1755B Applications High-voltage, power switching

M9342

Abstract: M9341
Contextual Info: Ordering number : EN1934 SB40-05H No. 1934 r Schottky Barrier Diode Twin Type • Cathode Common 50V, 4A Rectifier A pplications • High frequency rectification (switching regulators, converters, choppers) F eatu res • Low forward voltage (V f max = 0.55V)

ZXTN618MATA

Abstract: DFN2020B-3 ZXTN618MA
Contextual Info: A Product Line of Diodes Incorporated ZXTN618MA 20V NPN LOW SA TURA TION TRAN SISTOR Features Mechanical Data • • • • • • • • • • • • • • • VCEO = 20V RSAT = 47 mΩ IC = 4.5A Continuous Collector Current Low Equivalent On Resistance

ZXTN619MATA

Abstract: ZXTN619MA DFN2020B-3 marking code E4 NPN
Contextual Info: A Product Line of Diodes Incorporated ZXTN619MA 50V NPN LOW SA TURA TION TRAN SISTOR Features Mechanical Data • • • • • • • • • • • • • • • VCEO = 50V RSAT = 68 mΩ IC = 4A Continuous Collector Current Low Equivalent On Resistance

Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5070 C O LO R TV HORIZONTAL OUTPUT APPLICATION DAM PER DIODE BUILT IN • High Collector-Base Voltage (VCbo=1500V) • High Switching Speed (tf. max=0.4/s) ABSO LU T E MIXIMUM RATING Sym bol Chracteristic

Contextual Info: TO SHIBA TD62M2701F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP Tnfi5M?7fl1 F • ■ w ■ * ^wr ■ ■ LOW SATURATION VOLTAGE H-BRIDGE DRIVER TD62M2701F is multi-chip H-bridge driver 1C incorporates 4 low saturation discrete transistors which equipped biasresistor and fly-wheel diode. This 1C is suitable for

EVK71-050

Contextual Info: EVK71-050 75A : Outline Drawings ' <7 - POW ER T R A N S IST O R M ODULE : Features • 7 y - * * y > ^ y -r * - • hFE*''S5L' • K rtu Including Free W heeling Diode High DC Current Gain Insulated Type 1 Applications • Power Sw itching • A C « - * * »

Contextual Info: Transistors Diodes IC Transistor T SMD Type Product specification KTC4377 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A 0.53±0.1 0.80±0.1 3 0.44±0.1

F903C-13G

Abstract: F799-0G f799 F799-2G F799-3G F799-4G F799-5G F799-6G F799-8G F903C-11G
Contextual Info: m icrosem corp/ r p n h e T I tu to ifa Daaaaai t I ' ~ ailslBIMKJRO A MICROSEMi COMPANY • fl 1 3 - Single Phase Full Wave Bridge Rectifiers — D.C. Current lg to 5 Amperes Epoxy Case, Hermetically Sealed Glass Diodes PART NO. ; s ; F799-0G F799-1G F799-2G