S9G07A Search Results
S9G07A Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| S9G07A |
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MICROWAVE POWER GaAs FET | Scan | 159.95KB | 5 |
S9G07A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: S9G07A FEATURES • LOW DISTORTION Pad] = *74dBc@ Po * ■ ■ NON-MATCHED TYPE 29dBm HIGH GAIN G id B = 14 dB ■ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta = 251Ç CHARACTERISTICS SYMBOL CONDITION UNIT MIN. TYP. MAX. dBm 32.5 33.5 - 13 |
OCR Scan |
S9G07A 29dBm/I 600kHz S9G07A | |
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Contextual Info: S9G07A FEATURES • LO W D ISTO R TIO N ■ NON-MATCHED TYPE ■ HERMETICALLY SEALED PACKAG E Padj = *74 dBc<§> Po = 29 dBm ■ H IG H GAIN G id B = 14 dB RF PERFORMANCE SPECIFICATIONS Ta = 25V CHARACTERISTICS SYMBOL CONDITION UNIT MIN. TYP. MAX. dBm 32.5 |
OCR Scan |
S9G07A 29dBm, 600kHz S9G07A | |
S9G07AContextual Info: TOSHIBA MICROWAVE POWER G aAs FET MICROWAVE SEMICONDUCTOR S9G07A TECHNICAL DATA FEATURES : • LOW DISTORTION NON-M ATCHED TYPE Padj = -74 dBc@ Po = 29 dBm HERMETICALLY SEALED PACKAGE HIGH GAIN G id B = 14 dB RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTICS |
OCR Scan |
S9G07A 29dBm, 600kHz S9G07A |