S995 Search Results

Contextual Info: 1 2 DWG. NO. NOTES: S99544 1. MATES WITH UTS6_ _142G1P. 2. USES 1-TO-3 EA. SIZE-8 SOCKET CONTACTS ORDERED SEPARATELY CONTACT TYPE: 829116_: REFER TO SOURIAU BSD202333002. THIS DRAWING IS A CONTROLLED DOCUMENT FOR SOURIAU USA, INC. IT IS SUBJECT TO CHANGE WITHOUT NOTIFICATION.

xmtd

Abstract: TMS99532A 16-2-222 XTAL18 atec TMs99534
Contextual Info: S99532A FREQUENCY-SHIFT-KEYED MODEM M A R CH 1 986 P R O D U C T S U M M A ftY This data is excerpted from the TM S99532A /TM S99534A Modem Products Data Manual Copyright 1984, Literature Code: SP P S004. On-Chip Filtering. Modulation, and Demodulation N

tone dialer

Abstract: TMS99531 TMS99532A telephone KEYPAD
Contextual Info: TM S99531 PULSE AND TONE TELEPHONE DIALER M ARCH 1986 PRODUCT SU M M A R Y This data is excerpted fro m the TM S 99S 31 M o dem P rod ucts D ata M anual, C o p y rig h t 1 9 8 2 , Lite ratu re Code M P 049 • Standard N-Channel Silicon Gate Processing Using Switched Capacitor Technology

TMS99532A

Abstract: tms99532 tms99531 TMS99534 xmtd TMS99542
Contextual Info: T E X A S I N S T R U M E N T S INC 07E D J Ö U 1 7 2 4 GG77137 7 | T-75-33-05 1200 BPS full duplex modem Market requirements and the S99542 Although the S99532A has been a tremendous success and met the market’s needs for an easy- touse low-speed modem, it did not

Si6968ADQ

Contextual Info: Si6968ADQ New Product Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V "6.2 0.030 @ VGS = 2.5 V "5.3 D D TSSOP-8 D 1 S1 2 S1 3 G1 4 D Si6968ADQ 8 D 7 S2 6 S2 5 G2 G1 G2 Top View S1 S2 N-Channel MOSFET

Si6968ADQ

Contextual Info: Si6968ADQ New Product Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V "6.2 0.030 @ VGS = 2.5 V "5.3 D D TSSOP-8 D 1 S1 2 S1 3 G1 4 D Si6968ADQ 8 D 7 S2 6 S2 5 G2 G1 G2 Top View S1 S2 N-Channel MOSFET

Si4435DY

Abstract: Si4710CY
Contextual Info: Si4710CY New Product Vishay Siliconix Battery Disconnect Switch FEATURES D Level-Shifted Gate Drive with Internal MOSFET D Ultra Low Power Consumption in Off State Leakage Current Only D Logic Supply Voltage is Not Required D Solution for Bi-Directional Blocking

S71NS128PA0ZJAGV3

Abstract: transistor s99 NLB056 Spansion S99 PSRAM S71NS128PA0ZJAGV S99-50 2684 S71NS128NA0BJWSY NLA048
Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA December 18, 2007 Obsolescence Notification No: Subject: 2684 Obsolescence of the Mux pSRAM Type 2, 16M pSRAM Multi-Chip Packages MCPs products listed below Spansion LLC is announcing the obsolescence Mux pSRAM type 2, 16M pSRAM, and all valid

Spansion S99

Abstract: s98ws transistor s99 S99-50156 2719 diode MCP NAND S99-50160 s98ws512 MULTICHIP PACKAGES S98WS512PFFFW009
Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA May 27, 2008 Obsolescence Notification No: Subject: 2719 Obsolescence of the Type 1 512M NAND Multi-Chip Packages MCPs Products listed below Spansion LLC is announcing the obsolescence type 1, 512M NAND, and all valid combinations of the

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

spansion marking date code

Abstract: Spansion S99 S99-50241 Spansion S99-50241 spansion date code marking S29GL512P10 Spansion S99-50283 s99-5024 Spansion S29GL512P Spansion S29GL-P
Contextual Info: S99-50241 512 Megabit, 3.0 Volt-Only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology Supplement General Description This supplementary document contains information for S99-50241 based upon the S29GL512P. Specifications contained in this supplement supersede those in the S29GL-P data sheet. Please refer to the

NDS9955

Contextual Info: February 1996 N S9955 Dual N-Channel Enhancement Mode Field Effect Transistor Features General Description T h e s e N -C hannel enhance m en t m ode pow er field effect tra nsistors are produced using N ational's proprietary, high cell density, D M O S technology. T h is v e ry high de nsity process is

71107

Contextual Info: Si4426DY New Product Vishay Siliconix N-Channel 2.5-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "8.5 0.035 @ VGS = 2.5 V "7.1 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si4430DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.004 (typ)@ VGS = 10 V "23 0.008 @ VGS = 4.5 V "17 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

S29JL032H90BAI320

Abstract: S29JL032H70TFIG20H S99JL032H001 S29JL064H70TFI000H S29JL064H70TFIH00H S29JL032H90BAI32 s99-50102 S29JL032H90BAI322 S99JL032H0010 S99JL064H0010
Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA November 12, 2010 Advanced Change Notification No: Subject: 2818 Obsolescence of the S29JL032H and S29JL064H Flash Memory Products Spansion LLC is announcing the obsolescence of the S29JL032H and S29JL064H Flash Memory

S29GL128N90TFIR2

Abstract: s29gl256N10FAA02 S29GL512N11FFA02 S29GL512N11FFIV10E S29GL512N11FFA022 S29GL256N10TFI020H S29GL064A11FFIS20 s29gl064a90tfir9 s29gl016a90tfir10 S29GL016A90TFIR2
Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA April 16, 2008 Obsolescence Notification No: Subject: 2702 Obsolescence of the Discrete S29GL016A, S29GL032A, S29GL064A, S29GL128N, S29GL256N, and S29GL512N Products Spansion LLC is announcing the obsolescence of all valid combinations of the products listed below.

99548

Abstract: Si3454ADV
Contextual Info: Si3454ADV New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V "4.5 0.085 @ VGS = 4.5 V "3.8 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Swanstrom Super Diagonal Cutters Tip & Edge Tip & Edge Super Diagonal Cutters Tip & Edge Tip & Edge Tip & Edge Tip & Edge 4 S111 S405E S412E S415E S420E S423E Tool Numbers ergo short S111E S111 S112E S112 S115E S115 S116E S116 S121E S121 S405E S405 S410E S410

NDS9958

Contextual Info: February 1996 N S9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process

Transistor Mosfet N-Ch 30V

Abstract: n channel mosfet NDS9952A
Contextual Info: FAIRCHILD February 1996 M IC O N D U C T O R ! S9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

Si6968ADQ

Contextual Info: Si6968ADQ New Product Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.022 @ VGS = 4.5 V "6.2 0.030 @ VGS = 2.5 V "5.3 D D TSSOP-8 D 1 S1 2 S1 3 G1 4 D Si6968ADQ 8 D 7 S2 6 S2 5 G2 G1 G2 Top View S1 S2 N-Channel MOSFET

Contextual Info: Si4710CY New Product Vishay Siliconix Battery Disconnect Switch FEATURES D Level-Shifted Gate Drive with Internal MOSFET D Ultra Low Power Consumption in Off State Leakage Current Only D Logic Supply Voltage is Not Required D Solution for Bi-Directional Blocking

SI4412ADY

Contextual Info: Si4412ADY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "8 0.035 @ VGS = 4.5 V "6.6 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

HX8369

Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Contextual Info: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010