S9013 TRANSISTOR SOT23 J3 Search Results

S9013 TRANSISTOR SOT23 J3 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
BAV99		Toshiba Electronic Devices & Storage Corporation	Switching Diode, 100 V, 0.215 A, SOT23	Datasheet
TBAV70		Toshiba Electronic Devices & Storage Corporation	Switching Diode, 80 V, 0.215 A, SOT23	Datasheet
TBAS16		Toshiba Electronic Devices & Storage Corporation	Switching Diode, 80 V, 0.215 A, SOT23	Datasheet
TBAW56		Toshiba Electronic Devices & Storage Corporation	Switching Diode, 80 V, 0.215 A, SOT23	Datasheet
BAV70		Toshiba Electronic Devices & Storage Corporation	Switching Diode, 100 V, 0.215 A, SOT23	Datasheet

S9013 TRANSISTOR SOT23 J3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High Collector Current. IC= 500mA） z Complementary To S9012. z Excellent HFE Linearity. z Power dissipation.(PC=300mW S9013 Pb Lead-free APPLICATIONS z High Collector Current.	Original	S9013 500mAï S9012. 300mW) OT-23 BL/SSSTC082	PDF
J3 s9013 Abstract: S9013 SOT-23 transistor S9013 S9013 transistor SOT23 J3 s9013 transistor s9013 equivalent S9013 J3 J3 SOT MARKING J3 SOT-23 Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High Collector Current. IC= 500mA） z Complementary To S9012. z Excellent HFE Linearity. z Power dissipation.(PC=300mW S9013 Pb Lead-free APPLICATIONS z High Collector Current.	Original	S9013 500mA S9012. 300mW) OT-23 BL/SSSTC082 J3 s9013 S9013 SOT-23 transistor S9013 S9013 transistor SOT23 J3 s9013 transistor s9013 equivalent S9013 J3 J3 SOT MARKING J3 SOT-23	PDF
S9013 SOT-23 Abstract: J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23 Contextual Info: S9013 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units	Original	S9013 OT-23 OT-23 S9012 500mA 500mA, 30MHz S9013 SOT-23 J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23	PDF
S9013 J3 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz S9013 J3	PDF
s9013 transistor Abstract: J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz s9013 transistor J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN SOT–23 FEATURES z High Collector Current. z Complementary to S9012. z Excellent hFE Linearity. 1. BASE MARKING: J3 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	OT-23 S9013 S9012.	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (Ta=25 ℃unless otherwise noted)	Original	OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz	PDF
Y2 transistor Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123	Original	huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882	PDF
Transistor S8550 2TY Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250	Original	OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6	PDF